T0850VB25E Specs and Replacement
Type Designator: T0850VB25E
Type: IGBT
Type of IGBT Channel: N
Absolute Maximum Ratings
Pc ⓘ - Maximum Power Dissipation: 4400 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 2500 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic| ⓘ - Maximum Collector Current: 850 A @25℃
Tj ⓘ - Maximum Junction Temperature: 125 ℃
Electrical Characteristics
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.05 V @25℃
tr ⓘ - Rise Time, typ: 2000 nS
Package: MODULE T0850VB25E Substitution - IGBT ⓘ Cross-Reference Search
T0850VB25E datasheet
t0850vb25e.pdf
Date - 21 Jan, 2011 Data Sheet Issue - P1 WESTCODE An IXYS Company Prospective Data Insulated Gate Bi-Polar Transistor Type T0850VB25E Absolute Maximum Ratings MAXIMUM VOLTAGE RATINGS UNITS LIMITS VCES Collector emitter voltage 2500 V VDC link Permanent DC voltage for 100 FIT failure rate. 1250 V VGES Peak gate emitter voltage 20 V MAXIMUM RATINGS UNITS ... See More ⇒
Specs: IRG7RC07SD , CPV363M4UPBF , CPV363M4KPBF , AP20GT60ASI-HF , AOTF5B60D , AP20GT60I , AP28G40GEM-HF , T0510VB45E , GT30F124 , T0600TB45A , T1200TB25A , T0800EB45G , T0800TB45E , T0900EB45A , FF1400R12IP4 , T2250AB25E , T1200EB45E .
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