All IGBT. T0850VB25E Datasheet

 

T0850VB25E Datasheet and Replacement


   Type Designator: T0850VB25E
   Type: IGBT
   Type of IGBT Channel: N
   Pc ⓘ - Maximum Power Dissipation: 4400 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 2500 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic| ⓘ - Maximum Collector Current: 850 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.05 V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 6.3 V
   Tj ⓘ - Maximum Junction Temperature: 125 ℃
   tr ⓘ - Rise Time, typ: 2000 nS
   Qg ⓘ - Total Gate Charge, typ: 6500 nC
   Package: MODULE
 

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T0850VB25E Datasheet (PDF)

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T0850VB25E

Date:- 21 Jan, 2011 Data Sheet Issue:- P1 WESTCODEAn IXYS Company Prospective Data Insulated Gate Bi-Polar Transistor Type T0850VB25E Absolute Maximum Ratings MAXIMUM VOLTAGE RATINGS UNITS LIMITS VCES Collector emitter voltage 2500 V VDC link Permanent DC voltage for 100 FIT failure rate. 1250 V VGES Peak gate emitter voltage 20 V MAXIMUM RATINGS UNITS

Datasheet: IRG7RC07SD , CPV363M4UPBF , CPV363M4KPBF , AP20GT60ASI-HF , AOTF5B60D , AP20GT60I , AP28G40GEM-HF , T0510VB45E , GT30F124 , T0600TB45A , T1200TB25A , T0800EB45G , T0800TB45E , T0900EB45A , FF1400R12IP4 , T2250AB25E , T1200EB45E .

History: APT50GN60BG | YGW60N65F1A2 | VS-GP300TD60S | BLG40T65FUL-W | TIG052TS | VS-GB50YF120N

Keywords - T0850VB25E transistor datasheet

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