All IGBT. T0800TB45E Datasheet

 

T0800TB45E Datasheet and Replacement


   Type Designator: T0800TB45E
   Type: IGBT
   Type of IGBT Channel: N
   Pc ⓘ - Maximum Power Dissipation: 6400 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 4500 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic| ⓘ - Maximum Collector Current: 800 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.8 V @25℃
   Tj ⓘ - Maximum Junction Temperature: 125 ℃
   tr ⓘ - Rise Time, typ: 4000 nS
   Package: MODULE
 

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T0800TB45E Datasheet (PDF)

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T0800TB45E

Date:- 14 July, 2011 Data Sheet Issue:- P1 WESTCODEAn IXYS Company Prospective Data Insulated Gate Bi-Polar Transistor Type T0800TB45E Absolute Maximum Ratings MAXIMUM VOLTAGE RATINGS UNITS LIMITS VCES Collector emitter voltage 4500 V VDC link Permanent DC voltage for 100 FIT failure rate. 2800 V VGES Peak gate emitter voltage 20 V MAXIMUM RATINGS UNITS

 9.1. Size:382K  ixys
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T0800TB45E

Date:- 3 March, 2012 Data Sheet Issue: - 1 WESTCODEAn IXYS Company Insulated Gate Bi-Polar Transistor Type T0800EB45G Absolute Maximum Ratings MAXIMUM VOLTAGE RATINGS UNITS LIMITS VCES Collector emitter voltage 4500 V VDC link Permanent DC voltage for 100 FIT failure rate. 2800 V VGES Peak gate emitter voltage 20 V MAXIMUM RATINGS UNITS LIMITS IC(DC) D

Datasheet: AOTF5B60D , AP20GT60I , AP28G40GEM-HF , T0510VB45E , T0850VB25E , T0600TB45A , T1200TB25A , T0800EB45G , GT50JR22 , T0900EB45A , FF1400R12IP4 , T2250AB25E , T1200EB45E , T1600GB45G , T1800GB45A , T2400GB45E , AP26G40GEO-HF .

History: XP075PCE120AL1E3 | AOK20B135D1 | F3L200R12W2H3_B11 | IXGN200N60A2 | IXGT50N60B2 | IXGN200N60B3 | TGH80N65F2DR

Keywords - T0800TB45E transistor datasheet

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