T0800TB45E PDF and Equivalents Search

 

T0800TB45E Specs and Replacement

Type Designator: T0800TB45E

Type: IGBT

Type of IGBT Channel: N

Absolute Maximum Ratings

Pc ⓘ - Maximum Power Dissipation: 6400 W

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 4500 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V

|Ic| ⓘ - Maximum Collector Current: 800 A @25℃

Tj ⓘ - Maximum Junction Temperature: 125 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.8 V @25℃

tr ⓘ - Rise Time, typ: 4000 nS

Package: MODULE

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T0800TB45E datasheet

 ..1. Size:513K  ixys
 t0800tb45e.pdf pdf_icon

T0800TB45E

Date - 14 July, 2011 Data Sheet Issue - P1 WESTCODE An IXYS Company Prospective Data Insulated Gate Bi-Polar Transistor Type T0800TB45E Absolute Maximum Ratings MAXIMUM VOLTAGE RATINGS UNITS LIMITS VCES Collector emitter voltage 4500 V VDC link Permanent DC voltage for 100 FIT failure rate. 2800 V VGES Peak gate emitter voltage 20 V MAXIMUM RATINGS UNITS ... See More ⇒

 9.1. Size:382K  ixys
 t0800eb45g.pdf pdf_icon

T0800TB45E

Date - 3 March, 2012 Data Sheet Issue - 1 WESTCODE An IXYS Company Insulated Gate Bi-Polar Transistor Type T0800EB45G Absolute Maximum Ratings MAXIMUM VOLTAGE RATINGS UNITS LIMITS VCES Collector emitter voltage 4500 V VDC link Permanent DC voltage for 100 FIT failure rate. 2800 V VGES Peak gate emitter voltage 20 V MAXIMUM RATINGS UNITS LIMITS IC(DC) D... See More ⇒

Specs: AOTF5B60D , AP20GT60I , AP28G40GEM-HF , T0510VB45E , T0850VB25E , T0600TB45A , T1200TB25A , T0800EB45G , FGH40N60SFD , T0900EB45A , FF1400R12IP4 , T2250AB25E , T1200EB45E , T1600GB45G , T1800GB45A , T2400GB45E , AP26G40GEO-HF .

History: STGY50NB60HD | SRE60N120FSSDATP | RJH60F0DPQ-A0 | NGTB40N60FLWG | SRE60N065FSUD6

Keywords - T0800TB45E transistor spec

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