T0800TB45E IGBT. Datasheet pdf. Equivalent
Type Designator: T0800TB45E
Type: IGBT
Type of IGBT Channel: N
Pcⓘ - Maximum Power Dissipation: 6400 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 4500 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic|ⓘ - Maximum Collector Current: 800 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.8 V @25℃
Tjⓘ - Maximum Junction Temperature: 125 ℃
trⓘ - Rise Time, typ: 4000 nS
Package: MODULE
T0800TB45E Transistor Equivalent Substitute - IGBT Cross-Reference Search
T0800TB45E Datasheet (PDF)
t0800tb45e.pdf
Date:- 14 July, 2011 Data Sheet Issue:- P1 WESTCODEAn IXYS Company Prospective Data Insulated Gate Bi-Polar Transistor Type T0800TB45E Absolute Maximum Ratings MAXIMUM VOLTAGE RATINGS UNITS LIMITS VCES Collector emitter voltage 4500 V VDC link Permanent DC voltage for 100 FIT failure rate. 2800 V VGES Peak gate emitter voltage 20 V MAXIMUM RATINGS UNITS
t0800eb45g.pdf
Date:- 3 March, 2012 Data Sheet Issue: - 1 WESTCODEAn IXYS Company Insulated Gate Bi-Polar Transistor Type T0800EB45G Absolute Maximum Ratings MAXIMUM VOLTAGE RATINGS UNITS LIMITS VCES Collector emitter voltage 4500 V VDC link Permanent DC voltage for 100 FIT failure rate. 2800 V VGES Peak gate emitter voltage 20 V MAXIMUM RATINGS UNITS LIMITS IC(DC) D
Datasheet: APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W , IRG4MC50U , CRG60T60AK3HD , AOB10B60D , AOK10B60D , AOT10B60D , NGB8207AB , NGB8207B , AOB15B60D , IRGSL8B60K , AOK15B60D .
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