T1800GB45A Datasheet and Replacement
Type Designator: T1800GB45A
Type: IGBT + Anti-Parallel Diode
Type of IGBT Channel: N
Pcⓘ - Maximum Power Dissipation: 13700 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 4500 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic|ⓘ - Maximum Collector Current: 1800 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.8 V @25℃
|VGEth|ⓘ - Maximum G-E Threshold Voltag: 5.3(typ) V
Tjⓘ - Maximum Junction Temperature: 125 ℃
trⓘ - Rise Time, typ: 3300 nS
Qgⓘ - Total Gate Charge, typ: 10000 nC
Package: MODULE
- IGBT Cross-Reference
T1800GB45A Datasheet (PDF)
t1800gb45a.pdf
Date:- 1 Sep, 2011 Data Sheet Issue:- A1 WESTCODEAn IXYS Company Advance Data Insulated Gate Bi-Polar Transistor Type T1800GB45A Absolute Maximum Ratings MAXIMUM VOLTAGE RATINGS UNITS LIMITS VCES Collector emitter voltage 4500 V VDC link Permanent DC voltage for 100 FIT failure rate. 2800 V VGES Peak gate emitter voltage 20 V MAXIMUM RATINGS UNITS LIMI
Datasheet: T1200TB25A , T0800EB45G , T0800TB45E , T0900EB45A , FF1400R12IP4 , T2250AB25E , T1200EB45E , T1600GB45G , SGT50T65FD1PT , T2400GB45E , AP26G40GEO-HF , AP28G40GEO , AP30G40GEO-HF , RJP4010AGE , RJP4009ANS , STGF7H60DF , RJP4301APP-00 .
History: STGWT80H65DFB
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History: STGWT80H65DFB
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