All IGBT. T1800GB45A Datasheet

 

T1800GB45A Datasheet and Replacement


   Type Designator: T1800GB45A
   Type: IGBT + Anti-Parallel Diode
   Type of IGBT Channel: N
   Pc ⓘ - Maximum Power Dissipation: 13700 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 4500 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic| ⓘ - Maximum Collector Current: 1800 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.8 V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 5.3(typ) V
   Tj ⓘ - Maximum Junction Temperature: 125 ℃
   tr ⓘ - Rise Time, typ: 3300 nS
   Qg ⓘ - Total Gate Charge, typ: 10000 nC
   Package: MODULE
 

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T1800GB45A Datasheet (PDF)

 ..1. Size:445K  ixys
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T1800GB45A

Date:- 1 Sep, 2011 Data Sheet Issue:- A1 WESTCODEAn IXYS Company Advance Data Insulated Gate Bi-Polar Transistor Type T1800GB45A Absolute Maximum Ratings MAXIMUM VOLTAGE RATINGS UNITS LIMITS VCES Collector emitter voltage 4500 V VDC link Permanent DC voltage for 100 FIT failure rate. 2800 V VGES Peak gate emitter voltage 20 V MAXIMUM RATINGS UNITS LIMI

Datasheet: T1200TB25A , T0800EB45G , T0800TB45E , T0900EB45A , FF1400R12IP4 , T2250AB25E , T1200EB45E , T1600GB45G , GT30J127 , T2400GB45E , AP26G40GEO-HF , AP28G40GEO , AP30G40GEO-HF , RJP4010AGE , RJP4009ANS , STGF7H60DF , RJP4301APP-00 .

History: SG15N12P | STGW80H65DFB | CRGMF50T120FSC | IRGP50B60PD1PBF | SKB15N60 | APTGT25SK120D1

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