AP30G40GEO-HF
IGBT. Datasheet pdf. Equivalent
Type Designator: AP30G40GEO-HF
Type: IGBT + Built-in Zener Diodes
Type of IGBT Channel: N
Pcⓘ -
Maximum Power Dissipation: 1
W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 400
V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 6
V
|Ic|ⓘ - Maximum Collector Current: 150
A @25℃
|VCEsat|ⓘ -
Collector-Emitter saturation Voltage, typ: 5.5
V @25℃
|VGEth|ⓘ - Maximum G-E Threshold Voltag: 1.2
V
Tjⓘ -
Maximum Junction Temperature: 150
℃
trⓘ - Rise Time, typ: 900
nS
Coesⓘ - Output Capacitance, typ: 30
pF
Qgⓘ -
Total Gate Charge, typ: 60
nC
Package:
TSSOP8
AP30G40GEO-HF
Transistor Equivalent Substitute - IGBT Cross-Reference Search
AP30G40GEO-HF
Datasheet (PDF)
..1. Size:54K ape
ap30g40geo-hf.pdf 
AP30G40GEO-HFHalogen-Free ProductAdvanced Power N-CHANNEL INSULATED GATEElectronics Corp. BIPOLAR TRANSISTOR ICP=150A @VGE=3.0V VCE 400VC Low Gate Drive ICP 150ACCC Strobe Flash Applications RoHS Compliant & Halogen-Free CGEETSSOP-8GEEAbsolute Maximum RatingsSymbol Parameter Rating UnitsVCECollector-Emitter Voltage 400 VVGEPPeak Gate-E
9.1. Size:211K ape
ap30g100w.pdf
AP30G100WRoHS-compliant ProductAdvanced Power N-CHANNEL INSULATED GATEElectronics Corp. BIPOLAR TRANSISTORFeaturesVCES 1000V High speed switching IC 30A Low Saturation VoltageVCE(sat)=3.0V@IC=30ACG Industry Standard TO-3P Package GC RoHS Compliant TO-3PEEAbsolute Maximum RatingsSymbol Parameter Rating UnitsVCES Collector-Emitter Voltage 1000 VVG
9.2. Size:97K ape
ap30g120sw.pdf
AP30G120SWPb Free Plating ProductAdvanced Power N-CHANNEL INSULATED GATEElectronics Corp. BIPOLAR TRANSISTOR WITH FRD.Features High speed switching VCES 1200V Low Saturation Voltage IC 30AVCE(sat)=3.0V@IC=30AC CO-PAK, IGBT with FRDGTO-3PG RoHS Compliant CEEAbsolute Maximum RatingsSymbol Parameter Rating UnitsVCES Collector-Emitter Voltage 1200 V
9.3. Size:99K ape
ap30g120bsw-hf.pdf
AP30G120BSW-HFHalogen-Free ProductAdvanced Power N-CHANNEL INSULATED GATEElectronics Corp. BIPOLAR TRANSISTOR WITH FRD.Features High Speed Switching VCES 1200V Low Saturation Voltage IC 30AVCE(sat)=2.9V@IC=30AC CO-PAK, IGBT With FRD GCTO-3PG RoHS Compliant & Halogen-FreeEEAbsolute Maximum RatingsSymbol Parameter Rating UnitsVCES Collector-Emitter
9.4. Size:95K ape
ap30g120w.pdf
AP30G120WPb Free Plating ProductAdvanced Power N-CHANNEL INSULATED GATEElectronics Corp. BIPOLAR TRANSISTORFeaturesVCES 1100V High speed switching IC 30A Low Saturation VoltageVCE(sat)=3.0V@IC=30ACG Industry Standard TO-3P PackageG RoHS Compliant TO-3PCEEAbsolute Maximum RatingsSymbol Parameter Rating UnitsVCES Collector-Emitter Voltage 1100 V
9.5. Size:98K ape
ap30g120asw.pdf
AP30G120ASWRoHS-compliant ProductAdvanced Power N-CHANNEL INSULATED GATEElectronics Corp. BIPOLAR TRANSISTOR WITH FRD.Features High Speed Switching VCES 1200V Low Saturation Voltage IC 30AVCE(sat)=2.9V@IC=30AC CO-PAK, IGBT With FRD GCTO-3PG RoHS CompliantEEAbsolute Maximum RatingsSymbol Parameter Rating UnitsVCES Collector-Emitter Voltage 1200 V
9.6. Size:99K ape
ap30g120csw-hf.pdf
AP30G120CSW-HFHalogen-Free ProductAdvanced Power N-CHANNEL INSULATED GATEElectronics Corp. BIPOLAR TRANSISTOR WITH FRD.Features High Speed Switching VCES 1200V Low Saturation Voltage IC 30AVCE(sat)=2.9V@IC=30AC CO-PAK, IGBT With FRD GCTO-3PG RoHS Compliant & Halogen-FreeEEAbsolute Maximum RatingsSymbol Parameter Rating UnitsVCES Collector-Emitter
Datasheet: FF1400R12IP4
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