All IGBT. AP30G40GEO-HF Datasheet

 

AP30G40GEO-HF Datasheet and Replacement


   Type Designator: AP30G40GEO-HF
   Type: IGBT + Built-in Zener Diodes
   Type of IGBT Channel: N
   Pc ⓘ - Maximum Power Dissipation: 1 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 400 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 6 V
   |Ic| ⓘ - Maximum Collector Current: 150 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 5.5 V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 1.2 V
   Tj ⓘ - Maximum Junction Temperature: 150 ℃
   tr ⓘ - Rise Time, typ: 900 nS
   Coesⓘ - Output Capacitance, typ: 30 pF
   Qg ⓘ - Total Gate Charge, typ: 60 nC
   Package: TSSOP8
 

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AP30G40GEO-HF Datasheet (PDF)

 ..1. Size:54K  ape
 ap30g40geo-hf.pdf pdf_icon

AP30G40GEO-HF

AP30G40GEO-HFHalogen-Free ProductAdvanced Power N-CHANNEL INSULATED GATEElectronics Corp. BIPOLAR TRANSISTOR ICP=150A @VGE=3.0V VCE 400VC Low Gate Drive ICP 150ACCC Strobe Flash Applications RoHS Compliant & Halogen-Free CGEETSSOP-8GEEAbsolute Maximum RatingsSymbol Parameter Rating UnitsVCECollector-Emitter Voltage 400 VVGEPPeak Gate-E

 9.1. Size:211K  ape
 ap30g100w.pdf pdf_icon

AP30G40GEO-HF

AP30G100WRoHS-compliant ProductAdvanced Power N-CHANNEL INSULATED GATEElectronics Corp. BIPOLAR TRANSISTORFeaturesVCES 1000V High speed switching IC 30A Low Saturation VoltageVCE(sat)=3.0V@IC=30ACG Industry Standard TO-3P Package GC RoHS Compliant TO-3PEEAbsolute Maximum RatingsSymbol Parameter Rating UnitsVCES Collector-Emitter Voltage 1000 VVG

 9.2. Size:97K  ape
 ap30g120sw.pdf pdf_icon

AP30G40GEO-HF

AP30G120SWPb Free Plating ProductAdvanced Power N-CHANNEL INSULATED GATEElectronics Corp. BIPOLAR TRANSISTOR WITH FRD.Features High speed switching VCES 1200V Low Saturation Voltage IC 30AVCE(sat)=3.0V@IC=30AC CO-PAK, IGBT with FRDGTO-3PG RoHS Compliant CEEAbsolute Maximum RatingsSymbol Parameter Rating UnitsVCES Collector-Emitter Voltage 1200 V

 9.3. Size:99K  ape
 ap30g120bsw-hf.pdf pdf_icon

AP30G40GEO-HF

AP30G120BSW-HFHalogen-Free ProductAdvanced Power N-CHANNEL INSULATED GATEElectronics Corp. BIPOLAR TRANSISTOR WITH FRD.Features High Speed Switching VCES 1200V Low Saturation Voltage IC 30AVCE(sat)=2.9V@IC=30AC CO-PAK, IGBT With FRD GCTO-3PG RoHS Compliant & Halogen-FreeEEAbsolute Maximum RatingsSymbol Parameter Rating UnitsVCES Collector-Emitter

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Datasheet: AP05G120SW-HF , TSG10N120CN , AP05G120NSW-HF , AP20GT60SW , AP20GT60W , CI15T60 , MMIX4B12N300 , NGD8205A , IHW20N135R5 , IXYP8N90C3D1 , APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W .

Keywords - AP30G40GEO-HF transistor datasheet

 AP30G40GEO-HF cross reference
 AP30G40GEO-HF equivalent finder
 AP30G40GEO-HF lookup
 AP30G40GEO-HF substitution
 AP30G40GEO-HF replacement

 

 
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