AP30G40GEO-HF - аналоги и описание IGBT

AP30G40GEO-HF Halogen-Free Product Advanced Power N-CHANNEL INSULATED GATE Electronics Corp. BIPOLAR TRANSISTOR ICP=150A @VGE=3.0V VCE 400V C Low Gate Drive ICP 150A C C C Strobe Flash Applications RoHS Compliant & Halogen-Free C G E E TSSOP-8 G E E Absolute Maximum Ratings Symbol Parameter Rating Units VCE Collector-Emitter Voltage 400 V VGEP Peak Gate-E

AP30G100W RoHS-compliant Product Advanced Power N-CHANNEL INSULATED GATE Electronics Corp. BIPOLAR TRANSISTOR Features VCES 1000V High speed switching IC 30A Low Saturation Voltage VCE(sat)=3.0V@IC=30A C G Industry Standard TO-3P Package G C RoHS Compliant TO-3P E E Absolute Maximum Ratings Symbol Parameter Rating Units VCES Collector-Emitter Voltage 1000 V VG

AP30G120SW Pb Free Plating Product Advanced Power N-CHANNEL INSULATED GATE Electronics Corp. BIPOLAR TRANSISTOR WITH FRD. Features High speed switching VCES 1200V Low Saturation Voltage IC 30A VCE(sat)=3.0V@IC=30A C CO-PAK, IGBT with FRD G TO-3P G RoHS Compliant C E E Absolute Maximum Ratings Symbol Parameter Rating Units VCES Collector-Emitter Voltage 1200 V

AP30G120BSW-HF Halogen-Free Product Advanced Power N-CHANNEL INSULATED GATE Electronics Corp. BIPOLAR TRANSISTOR WITH FRD. Features High Speed Switching VCES 1200V Low Saturation Voltage IC 30A VCE(sat)=2.9V@IC=30A C CO-PAK, IGBT With FRD G C TO-3P G RoHS Compliant & Halogen-Free E E Absolute Maximum Ratings Symbol Parameter Rating Units VCES Collector-Emitter

AP30G120W Pb Free Plating Product Advanced Power N-CHANNEL INSULATED GATE Electronics Corp. BIPOLAR TRANSISTOR Features VCES 1100V High speed switching IC 30A Low Saturation Voltage VCE(sat)=3.0V@IC=30A C G Industry Standard TO-3P Package G RoHS Compliant TO-3P C E E Absolute Maximum Ratings Symbol Parameter Rating Units VCES Collector-Emitter Voltage 1100 V

AP30G120ASW RoHS-compliant Product Advanced Power N-CHANNEL INSULATED GATE Electronics Corp. BIPOLAR TRANSISTOR WITH FRD. Features High Speed Switching VCES 1200V Low Saturation Voltage IC 30A VCE(sat)=2.9V@IC=30A C CO-PAK, IGBT With FRD G C TO-3P G RoHS Compliant E E Absolute Maximum Ratings Symbol Parameter Rating Units VCES Collector-Emitter Voltage 1200 V

AP30G120CSW-HF Halogen-Free Product Advanced Power N-CHANNEL INSULATED GATE Electronics Corp. BIPOLAR TRANSISTOR WITH FRD. Features High Speed Switching VCES 1200V Low Saturation Voltage IC 30A VCE(sat)=2.9V@IC=30A C CO-PAK, IGBT With FRD G C TO-3P G RoHS Compliant & Halogen-Free E E Absolute Maximum Ratings Symbol Parameter Rating Units VCES Collector-Emitter

AP30G03GD 30V N+P-Channel Enhancement Mode MOSFET Description The AP30G03GD uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 30V I =38A DS D R