Справочник IGBT. AP30G40GEO-HF

 

AP30G40GEO-HF - IGBT справочник. Даташиты. Аналоги. Параметры и характеристики.


   Наименование: AP30G40GEO-HF
   Тип транзистора: IGBT + Built-in Zener Diodes
   Тип управляющего канала: N
   Pcⓘ - Максимальная рассеиваемая мощность: 1 W
   |Vce|ⓘ - Предельно-допустимое напряжение коллектор-эмиттер: 400 V
   |Vge|ⓘ - Максимально допустимое напряжение эмиттер-затвор: 6 V
   |Ic|ⓘ - Максимальный постоянный ток коллектора: 150 A @25℃
   |VCEsat|ⓘ - Напряжение насыщения коллектор-эмиттер типовое: 5.5 V @25℃
   |VGEth|ⓘ - Максимальное пороговое напряжение затвор-эмиттер: 1.2 V
   Tjⓘ - Максимальная температура перехода: 150 ℃
   trⓘ - Время нарастания типовое: 900 nS
   Coesⓘ - Выходная емкость, типовая: 30 pF
   Qgⓘ - Общий заряд затвора, typ: 60 nC
   Тип корпуса: TSSOP8

 Аналог (замена) для AP30G40GEO-HF

 

 

AP30G40GEO-HF Datasheet (PDF)

 ..1. Size:54K  ape
 ap30g40geo-hf.pdf

AP30G40GEO-HF AP30G40GEO-HF

AP30G40GEO-HFHalogen-Free ProductAdvanced Power N-CHANNEL INSULATED GATEElectronics Corp. BIPOLAR TRANSISTOR ICP=150A @VGE=3.0V VCE 400VC Low Gate Drive ICP 150ACCC Strobe Flash Applications RoHS Compliant & Halogen-Free CGEETSSOP-8GEEAbsolute Maximum RatingsSymbol Parameter Rating UnitsVCECollector-Emitter Voltage 400 VVGEPPeak Gate-E

 9.1. Size:211K  ape
 ap30g100w.pdf

AP30G40GEO-HF AP30G40GEO-HF

AP30G100WRoHS-compliant ProductAdvanced Power N-CHANNEL INSULATED GATEElectronics Corp. BIPOLAR TRANSISTORFeaturesVCES 1000V High speed switching IC 30A Low Saturation VoltageVCE(sat)=3.0V@IC=30ACG Industry Standard TO-3P Package GC RoHS Compliant TO-3PEEAbsolute Maximum RatingsSymbol Parameter Rating UnitsVCES Collector-Emitter Voltage 1000 VVG

 9.2. Size:97K  ape
 ap30g120sw.pdf

AP30G40GEO-HF AP30G40GEO-HF

AP30G120SWPb Free Plating ProductAdvanced Power N-CHANNEL INSULATED GATEElectronics Corp. BIPOLAR TRANSISTOR WITH FRD.Features High speed switching VCES 1200V Low Saturation Voltage IC 30AVCE(sat)=3.0V@IC=30AC CO-PAK, IGBT with FRDGTO-3PG RoHS Compliant CEEAbsolute Maximum RatingsSymbol Parameter Rating UnitsVCES Collector-Emitter Voltage 1200 V

 9.3. Size:99K  ape
 ap30g120bsw-hf.pdf

AP30G40GEO-HF AP30G40GEO-HF

AP30G120BSW-HFHalogen-Free ProductAdvanced Power N-CHANNEL INSULATED GATEElectronics Corp. BIPOLAR TRANSISTOR WITH FRD.Features High Speed Switching VCES 1200V Low Saturation Voltage IC 30AVCE(sat)=2.9V@IC=30AC CO-PAK, IGBT With FRD GCTO-3PG RoHS Compliant & Halogen-FreeEEAbsolute Maximum RatingsSymbol Parameter Rating UnitsVCES Collector-Emitter

 9.4. Size:95K  ape
 ap30g120w.pdf

AP30G40GEO-HF AP30G40GEO-HF

AP30G120WPb Free Plating ProductAdvanced Power N-CHANNEL INSULATED GATEElectronics Corp. BIPOLAR TRANSISTORFeaturesVCES 1100V High speed switching IC 30A Low Saturation VoltageVCE(sat)=3.0V@IC=30ACG Industry Standard TO-3P PackageG RoHS Compliant TO-3PCEEAbsolute Maximum RatingsSymbol Parameter Rating UnitsVCES Collector-Emitter Voltage 1100 V

 9.5. Size:98K  ape
 ap30g120asw.pdf

AP30G40GEO-HF AP30G40GEO-HF

AP30G120ASWRoHS-compliant ProductAdvanced Power N-CHANNEL INSULATED GATEElectronics Corp. BIPOLAR TRANSISTOR WITH FRD.Features High Speed Switching VCES 1200V Low Saturation Voltage IC 30AVCE(sat)=2.9V@IC=30AC CO-PAK, IGBT With FRD GCTO-3PG RoHS CompliantEEAbsolute Maximum RatingsSymbol Parameter Rating UnitsVCES Collector-Emitter Voltage 1200 V

 9.6. Size:99K  ape
 ap30g120csw-hf.pdf

AP30G40GEO-HF AP30G40GEO-HF

AP30G120CSW-HFHalogen-Free ProductAdvanced Power N-CHANNEL INSULATED GATEElectronics Corp. BIPOLAR TRANSISTOR WITH FRD.Features High Speed Switching VCES 1200V Low Saturation Voltage IC 30AVCE(sat)=2.9V@IC=30AC CO-PAK, IGBT With FRD GCTO-3PG RoHS Compliant & Halogen-FreeEEAbsolute Maximum RatingsSymbol Parameter Rating UnitsVCES Collector-Emitter

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