NGTG40N120FL2WG PDF and Equivalents Search

 

NGTG40N120FL2WG Specs and Replacement

Type Designator: NGTG40N120FL2WG

Type: IGBT

Type of IGBT Channel: N

Absolute Maximum Ratings

Pc ⓘ - Maximum Power Dissipation: 535 W

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V

|Ic| ⓘ - Maximum Collector Current: 40 A @25℃

Tj ⓘ - Maximum Junction Temperature: 175 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2 V @25℃

tr ⓘ - Rise Time, typ: 42 nS

Coesⓘ - Output Capacitance, typ: 230 pF

Package: TO247

 NGTG40N120FL2WG Substitution

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NGTG40N120FL2WG datasheet

 0.1. Size:183K  onsemi
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NGTG40N120FL2WG

NGTG40N120FL2WG IGBT - Field Stop II This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop II Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss. The IGBT is well suited for UPS and solar applications. Features http //onsemi.com Extremely Eff... See More ⇒

 1.1. Size:183K  onsemi
ngtg40n120fl2.pdf pdf_icon

NGTG40N120FL2WG

NGTG40N120FL2WG IGBT - Field Stop II This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop II Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss. The IGBT is well suited for UPS and solar applications. Features http //onsemi.com Extremely Eff... See More ⇒

Specs: NGTB30N120L2WG , NGTB40N120FL2 , NGTB40N120FL2WG , NGTB40N120S , NGTB40N120SWG , NGTB50N120FL2 , NGTB50N120FL2WG , NGTG40N120FL2 , IHW20N135R5 , IKW75N65EL5 , IKZ75N65EL5 , IKW60N60H3 , IGW60N60H3 , NGTB40N60L2 , NGTB40N60L2WG , NGTB50N60FL2 , NGTB50N60FL2WG .

Keywords - NGTG40N120FL2WG transistor spec

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