NGTG40N120FL2WG Datasheet and Replacement
Type Designator: NGTG40N120FL2WG
Type: IGBT
Type of IGBT Channel: N
Pc ⓘ - Maximum Power Dissipation: 535 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic| ⓘ - Maximum Collector Current: 40 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2 V @25℃
Tj ⓘ - Maximum Junction Temperature: 175 ℃
tr ⓘ - Rise Time, typ: 42 nS
Coesⓘ - Output Capacitance, typ: 230 pF
Package: TO247
NGTG40N120FL2WG substitution
NGTG40N120FL2WG Datasheet (PDF)
ngtg40n120fl2wg.pdf

NGTG40N120FL2WGIGBT - Field Stop IIThis Insulated Gate Bipolar Transistor (IGBT) features a robust andcost effective Field Stop II Trench construction, and provides superiorperformance in demanding switching applications, offering both lowon state voltage and minimal switching loss. The IGBT is well suitedfor UPS and solar applications.Features http://onsemi.com Extremely Eff
ngtg40n120fl2.pdf

NGTG40N120FL2WGIGBT - Field Stop IIThis Insulated Gate Bipolar Transistor (IGBT) features a robust andcost effective Field Stop II Trench construction, and provides superiorperformance in demanding switching applications, offering both lowon state voltage and minimal switching loss. The IGBT is well suitedfor UPS and solar applications.Features http://onsemi.com Extremely Eff
Datasheet: APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W , IRG4MC50U , IKW30N60H3 , AOB10B60D , AOK10B60D , AOT10B60D , NGB8207AB , NGB8207B , AOB15B60D , IRGSL8B60K , AOK15B60D .
History: FGY120T65SPD-F085 | TT040U060EQ
Keywords - NGTG40N120FL2WG transistor datasheet
NGTG40N120FL2WG cross reference
NGTG40N120FL2WG equivalent finder
NGTG40N120FL2WG lookup
NGTG40N120FL2WG substitution
NGTG40N120FL2WG replacement
History: FGY120T65SPD-F085 | TT040U060EQ



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