All IGBT. NGTG40N120FL2WG Datasheet

 

NGTG40N120FL2WG Datasheet and Replacement


   Type Designator: NGTG40N120FL2WG
   Type: IGBT
   Type of IGBT Channel: N
   Pc ⓘ - Maximum Power Dissipation: 535 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic| ⓘ - Maximum Collector Current: 40 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2 V @25℃
   Tj ⓘ - Maximum Junction Temperature: 175 ℃
   tr ⓘ - Rise Time, typ: 42 nS
   Coesⓘ - Output Capacitance, typ: 230 pF
   Package: TO247
 

 NGTG40N120FL2WG substitution

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NGTG40N120FL2WG Datasheet (PDF)

 0.1. Size:183K  onsemi
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NGTG40N120FL2WG

NGTG40N120FL2WGIGBT - Field Stop IIThis Insulated Gate Bipolar Transistor (IGBT) features a robust andcost effective Field Stop II Trench construction, and provides superiorperformance in demanding switching applications, offering both lowon state voltage and minimal switching loss. The IGBT is well suitedfor UPS and solar applications.Features http://onsemi.com Extremely Eff

 1.1. Size:183K  onsemi
ngtg40n120fl2.pdf pdf_icon

NGTG40N120FL2WG

NGTG40N120FL2WGIGBT - Field Stop IIThis Insulated Gate Bipolar Transistor (IGBT) features a robust andcost effective Field Stop II Trench construction, and provides superiorperformance in demanding switching applications, offering both lowon state voltage and minimal switching loss. The IGBT is well suitedfor UPS and solar applications.Features http://onsemi.com Extremely Eff

Datasheet: APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W , IRG4MC50U , IKW30N60H3 , AOB10B60D , AOK10B60D , AOT10B60D , NGB8207AB , NGB8207B , AOB15B60D , IRGSL8B60K , AOK15B60D .

History: FGY120T65SPD-F085 | TT040U060EQ

Keywords - NGTG40N120FL2WG transistor datasheet

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