IRG8P60N120KD PDF and Equivalents Search

 

IRG8P60N120KD Specs and Replacement

Type Designator: IRG8P60N120KD

Type: IGBT

Type of IGBT Channel: N

Absolute Maximum Ratings

Pc ⓘ - Maximum Power Dissipation: 420 W

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 30 V

|Ic| ⓘ - Maximum Collector Current: 100 A @25℃

Tj ⓘ - Maximum Junction Temperature: 150 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.7 V @25℃

tr ⓘ - Rise Time, typ: 30 nS

Coesⓘ - Output Capacitance, typ: 215 pF

Package: TO247

 IRG8P60N120KD Substitution

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IRG8P60N120KD datasheet

 ..1. Size:699K  international rectifier
 irg8p60n120kd.pdf pdf_icon

IRG8P60N120KD

IRG8P60N120KDPbF IRG8P60N120KD-EPbF Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode VCES = 1200V C IC = 60A, TC =100 C tSC 10 s, TJ(max) = 150 C E G E C G G C E VCE(ON) typ. = 1.7V @ IC = 40A IRG8P60N120KDPbF IRG8P60N120KD EPbF n-channel TO 247AC TO 247AD Applications Industrial Motor Drive G C E UPS Gate... See More ⇒

 9.1. Size:654K  international rectifier
 irg8p25n120kd.pdf pdf_icon

IRG8P60N120KD

IRG8P25N120KDPbF IRG8P25N120KD-EPbF Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode VCES = 1200V C IC = 25A, TC =100 C E tSC 10 s, TJ(max) = 150 C E G C C G G E VCE(ON) typ. = 1.7V @ IC = 15A IRG8P25N120KDPbF IRG8P25N120KD EPbF n-channel TO 247AC Applications TO 247AD G C E Industrial Motor Drive Gate Collector ... See More ⇒

 9.2. Size:640K  international rectifier
 irg8p15n120kd.pdf pdf_icon

IRG8P60N120KD

IRG8P15N120KDPbF IRG8P15N120KD-EPbF Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode VCES = 1200V C IC = 15A, TC =100 C E tSC 10 s, TJ(max) = 150 C E G C G G C E VCE(ON) typ. = 1.7V @ IC = 10A IRG8P15N120KDPbF IRG8P15N120KD EPbF n-channel TO 247AC Applications TO 247AD G C E Industrial Motor Drive Gate Collector E... See More ⇒

 9.3. Size:659K  international rectifier
 irg8p08n120kd.pdf pdf_icon

IRG8P60N120KD

IRG8B08N120KDPbF IRG8P08N120KDPbF IRG8P08N120KD-EPbF Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode VCES = 1200V C IC = 8A, TC =100 C tSC 10 s, TJ(max) = 150 C E C G E C E VCE(ON) typ. = 1.7V @ IC = 5A G C G G E TO-247AD TO-220AB TO-247AC IRG8P08N120KD-EPbF Applications IRG8B08N120KDPbF IRG8P08N120KDPbF n-channel Ind... See More ⇒

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Specs: NGTB40N60L2 , NGTB40N60L2WG , NGTB50N60FL2 , NGTB50N60FL2WG , NGTB50N60S1 , NGTB50N60S1WG , NGTB50N65FL2 , NGTB50N65FL2WG , CRG40T60AK3HD , TIG056BF-1E , STGF30H60DF , IKA08N65F5 , IKA08N65H5 , IKA15N65F5 , IKA15N65H5 , RJH60D2DPP-E0 , RJH60V2BDPP-M0 .

Keywords - IRG8P60N120KD transistor spec

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