All IGBT. RJH60D2DPP-E0 Datasheet

 

RJH60D2DPP-E0 IGBT. Datasheet pdf. Equivalent


   Type Designator: RJH60D2DPP-E0
   Type: IGBT + Anti-Parallel Diode
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 34 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 30 V
   |Ic|ⓘ - Maximum Collector Current: 25 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.7 V @25℃
   Tjⓘ - Maximum Junction Temperature: 150 ℃
   trⓘ - Rise Time, typ: 13 nS
   Coesⓘ - Output Capacitance, typ: 40 pF
   Qgⓘ - Total Gate Charge, typ: 19 nC
   Package: TO220F

 RJH60D2DPP-E0 Transistor Equivalent Substitute - IGBT Cross-Reference Search

 

RJH60D2DPP-E0 Datasheet (PDF)

 ..1. Size:121K  renesas
 rjh60d2dpp-e0.pdf

RJH60D2DPP-E0 RJH60D2DPP-E0

Preliminary Datasheet RJH60D2DPP-E0 R07DS0894EJ0100600V - 12A - IGBT Rev.1.00Application: Inverter Nov 01, 2012Features Short circuit withstand time (5 s typ.) Low collector to emitter saturation voltage VCE(sat) = 1.7 V typ. (at IC = 12 A, VGE = 15 V, Ta = 25C) Built in fast recovery diode (100 ns typ.) in one package Trench gate and thin wafer tec

 3.1. Size:99K  renesas
 rjh60d2dpp-m0.pdf

RJH60D2DPP-E0 RJH60D2DPP-E0

Preliminary Datasheet RJH60D2DPP-M0 R07DS0160EJ0400600V - 12A - IGBT Rev.4.00Application: Inverter Apr 19, 2012Features Short circuit withstand time (5 s typ.) Low collector to emitter saturation voltage VCE(sat) = 1.7 V typ. (at IC = 12 A, VGE = 15 V, Ta = 25C) Built in fast recovery diode (100 ns typ.) in one package Trench gate and thin wafer tec

 4.1. Size:82K  renesas
 r07ds0160ej rjh60d2dpp.pdf

RJH60D2DPP-E0 RJH60D2DPP-E0

Preliminary Datasheet RJH60D2DPP-M0 R07DS0160EJ0300Silicon N Channel IGBT Rev.3.00Application: Inverter Nov 16, 2010Features Short circuit withstand time (5 s typ.) Low collector to emitter saturation voltage VCE(sat) = 1.7 V typ. (at IC = 12 A, VGE = 15 V, Ta = 25C) Built in fast recovery diode (100 ns typ.) in one package Trench gate and thin wafe

 5.1. Size:98K  renesas
 rjh60d2dpe.pdf

RJH60D2DPP-E0 RJH60D2DPP-E0

Preliminary Datasheet RJH60D2DPE R07DS0159EJ0400600V - 12A - IGBT Rev.4.00Application: Inverter Apr 19, 2012Features Short circuit withstand time (5 s typ.) Low collector to emitter saturation voltage VCE(sat) = 1.7 V typ. (at IC = 12 A, VGE = 15 V, Ta = 25C) Built in fast recovery diode (100 ns typ.) in one package Trench gate and thin wafer techno

 5.2. Size:82K  renesas
 r07ds0159ej rjh60d2dpe.pdf

RJH60D2DPP-E0 RJH60D2DPP-E0

Preliminary Datasheet RJH60D2DPE R07DS0159EJ0300Silicon N Channel IGBT Rev.3.00Application: Inverter Nov 16, 2010Features Short circuit withstand time (5 s typ.) Low collector to emitter saturation voltage VCE(sat) = 1.7 V typ. (at IC = 12 A, VGE = 15 V, Ta = 25C) Built in fast recovery diode (100 ns typ.) in one package Trench gate and thin wafer t

Datasheet: APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W , IRG4MC50U , CRG60T60AK3HD , AOB10B60D , AOK10B60D , AOT10B60D , NGB8207AB , NGB8207B , AOB15B60D , IRGSL8B60K , AOK15B60D .

 

 
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