RJH60D2DPP-E0 - IGBT справочник. Даташиты. Аналоги. Параметры и характеристики.

Наименование: RJH60D2DPP-E0

Тип управляющего канала: N-Channel

Максимальная рассеиваемая мощность (Pc): 34

Предельно-допустимое напряжение коллектор-эмиттер (Uce): 600

Напряжение насыщения коллектор-эмиттер (Ucesat): 1.7

Максимально допустимое напряжение эмиттер-затвор (Ueg): 30

Максимальный постоянный ток коллектора (Ic): 25

Максимальная температура перехода (Tj): 150

Время нарастания: 13

Емкость коллектора (Cc), pf: 40

Корпус: TO220F

Аналог (замена) для RJH60D2DPP-E0

RJH60D2DPP-E0 Datasheet (PDF)

1.1. r07ds0159ej rjh60d2dpe.pdf Size:82K _renesas

Preliminary Datasheet RJH60D2DPE R07DS0159EJ0300 Silicon N Channel IGBT Rev.3.00 Application: Inverter Nov 16, 2010 Features ? Short circuit withstand time (5 ?s typ.) ? Low collector to emitter saturation voltage VCE(sat) = 1.7 V typ. (at IC = 12 A, VGE = 15 V, Ta = 25�C) ? Built in fast recovery diode (100 ns typ.) in one package ? Trench gate and thin wafer technology ?

1.2. r07ds0160ej rjh60d2dpp.pdf Size:82K _renesas

Preliminary Datasheet RJH60D2DPP-M0 R07DS0160EJ0300 Silicon N Channel IGBT Rev.3.00 Application: Inverter Nov 16, 2010 Features ? Short circuit withstand time (5 ?s typ.) ? Low collector to emitter saturation voltage VCE(sat) = 1.7 V typ. (at IC = 12 A, VGE = 15 V, Ta = 25�C) ? Built in fast recovery diode (100 ns typ.) in one package ? Trench gate and thin wafer technology

 1.3. rjh60d2dpp-m0.pdf Size:99K _igbt

 Preliminary Datasheet RJH60D2DPP-M0 R07DS0160EJ0400 600V - 12A - IGBT Rev.4.00 Application: Inverter Apr 19, 2012 Features  Short circuit withstand time (5 s typ.)  Low collector to emitter saturation voltage VCE(sat) = 1.7 V typ. (at IC = 12 A, VGE = 15 V, Ta = 25°C)  Built in fast recovery diode (100 ns typ.) in one package  Trench gate and thin wafer tec

1.4. rjh60d2dpp-e0.pdf Size:121K _igbt

 Preliminary Datasheet RJH60D2DPP-E0 R07DS0894EJ0100 600V - 12A - IGBT Rev.1.00 Application: Inverter Nov 01, 2012 Features  Short circuit withstand time (5 s typ.)  Low collector to emitter saturation voltage VCE(sat) = 1.7 V typ. (at IC = 12 A, VGE = 15 V, Ta = 25°C)  Built in fast recovery diode (100 ns typ.) in one package  Trench gate and thin wafer tec

 1.5. rjh60d2dpe.pdf Size:98K _igbt

 Preliminary Datasheet RJH60D2DPE R07DS0159EJ0400 600V - 12A - IGBT Rev.4.00 Application: Inverter Apr 19, 2012 Features  Short circuit withstand time (5 s typ.)  Low collector to emitter saturation voltage VCE(sat) = 1.7 V typ. (at IC = 12 A, VGE = 15 V, Ta = 25°C)  Built in fast recovery diode (100 ns typ.) in one package  Trench gate and thin wafer techno

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