All IGBT. IRGR4610D Datasheet

 

IRGR4610D Datasheet and Replacement


   Type Designator: IRGR4610D
   Type: IGBT + Anti-Parallel Diode
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 77 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic|ⓘ - Maximum Collector Current: 16 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.7 V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 6.5 V
   Tjⓘ - Maximum Junction Temperature: 175 ℃
   trⓘ - Rise Time, typ: 11 nS
   Coesⓘ - Output Capacitance, typ: 29 pF
   Qgⓘ - Total Gate Charge, typ: 13 nC
   Package: TO252
      - IGBT Cross-Reference

 

IRGR4610D Datasheet (PDF)

 ..1. Size:428K  international rectifier
irgr4610d.pdf pdf_icon

IRGR4610D

IRGR4610DPbFIRGS4610DPbFIRGB4610DPbFInsulated Gate Bipolar Transistor with Ultrafast Soft Recovery DiodeC CVCES = 600VCCIC = 10A, TC = 100CEEECG GGGtsc > 5s, Tjmax = 175CD-PakE D2-Pak TO-220ABVCE(on) typ. = 1.7V @ 6A IRGR4610DPbFIRGS4610DPbF IRGB4610DPbFn-channelGCEApplicationsGate Collector Emitter Appliance Drives Inverters

 8.1. Size:858K  international rectifier
irgr4607d.pdf pdf_icon

IRGR4610D

IRGR4607DPbF IRGS4607DPbF IRGB4607DPbF Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode VCES = 600V CC C C IC = 7.0A, TC =100C E E E G C C tSC 5s, TJ(max) = 175C G G G EIRGR4607DPbF IRGS4607DPbF IRGB4607DPbF VCE(ON) typ. = 1.75V @ IC = 4.0A n-channel TO-220AB D-Pak D2Pak Applications G C E Industrial Motor Drive

 9.1. Size:453K  international rectifier
auirgr4045d.pdf pdf_icon

IRGR4610D

PD - 97637AUTOMOTIVE GRADEAUIRGR4045DAUIRGU4045DINSULATED GATE BIPOLAR TRANSISTOR WITHCULTRAFAST SOFT RECOVERY DIODEVCES = 600VFeatures Low VCE (on) Trench IGBT TechnologyIC = 6.0A, TC = 100C Low Switching Losses Maximum Junction temperature 175 C GVCE(on) typ. = 1.7V 5s SCSOA Square RBSOAE 100% of the parts tested for ILM n-channel

 9.2. Size:341K  international rectifier
irgr4045d.pdf pdf_icon

IRGR4610D

IRGR4045DPbFINSULATED GATE BIPOLAR TRANSISTOR WITHCULTRAFAST SOFT RECOVERY DIODE VCES = 600VFeaturesIC 6.0A, TC = 100C Low VCE (on) Trench IGBT Technology Low Switching LossesTjmax = 175C Maximum Junction temperature 175 C G 5s SCSOA Square RBSOAVCE(on) typ. 1.7VE 100% of the parts tested for ILM n-channel Positive VCE (on) Te

Datasheet: STGFW40V60DF , RJH60V2BDPE , IKP08N65F5 , IKP08N65H5 , IKD04N60RA , IRG4MC30F , IRGB4610D , IRGR4045D , IHW20N120R2 , IRGS4045D , IRGS4610D , STGFW80V60F , IXA12IF1200PC , OM6526SA , STGB7H60DF , STGP7H60DF , IRG8B08N120KD .

History: NCE40TD120WW | CM100TX-24S | IXGH30N120C3H1

Keywords - IRGR4610D transistor datasheet

 IRGR4610D cross reference
 IRGR4610D equivalent finder
 IRGR4610D lookup
 IRGR4610D substitution
 IRGR4610D replacement

 

 
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