IRGR4610D - аналоги, параметры транзистора - Справочник транзисторов

IRGR4610D даташит

..1. Size:428K international rectifier
irgr4610d.pdf pdf_icon

IRGR4610DPbF IRGS4610DPbF IRGB4610DPbF Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode C C VCES = 600V C C IC = 10A, TC = 100 C E E E C G G G G tsc > 5 s, Tjmax = 175 C D-Pak E D2-Pak TO-220AB VCE(on) typ. = 1.7V @ 6A IRGR4610DPbF IRGS4610DPbF IRGB4610DPbF n-channel GCE Applications Gate Collector Emitter Appliance Drives Inverters

8.1. Size:858K international rectifier
irgr4607d.pdf pdf_icon

IRGR4607DPbF IRGS4607DPbF IRGB4607DPbF Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode VCES = 600V C C C C IC = 7.0A, TC =100 C E E E G C C tSC 5 s, TJ(max) = 175 C G G G E IRGR4607DPbF IRGS4607DPbF IRGB4607DPbF VCE(ON) typ. = 1.75V @ IC = 4.0A n-channel TO-220AB D-Pak D2Pak Applications G C E Industrial Motor Drive

9.1. Size:453K international rectifier
auirgr4045d.pdf pdf_icon

9.2. Size:341K international rectifier
irgr4045d.pdf pdf_icon

IRGR4045DPbF INSULATED GATE BIPOLAR TRANSISTOR WITH C ULTRAFAST SOFT RECOVERY DIODE VCES = 600V Features IC 6.0A, TC = 100 C Low VCE (on) Trench IGBT Technology Low Switching Losses Tjmax = 175 C Maximum Junction temperature 175 C G 5 s SCSOA Square RBSOA VCE(on) typ. 1.7V E 100% of the parts tested for ILM n-channel Positive VCE (on) Te

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