All IGBT. IRG8P08N120KD Datasheet

 

IRG8P08N120KD IGBT. Datasheet pdf. Equivalent

Type Designator: IRG8P08N120KD

Type of IGBT Channel: N-Channel

Maximum Power Dissipation (Pc), W: 89

Maximum Collector-Emitter Voltage |Vce|, V: 1200

Collector-Emitter saturation Voltage |Vcesat|, V: 1.7

Maximum Gate-Emitter Voltage |Veg|, V: 30

Maximum Collector Current |Ic|, A: 15

Maximum Junction Temperature (Tj), °C: 150

Rise Time, nS: 20

Maximum Collector Capacity (Cc), pF: 30

Package: TO247

IRG8P08N120KD Transistor Equivalent Substitute - IGBT Cross-Reference Search

 

IRG8P08N120KD Datasheet (PDF)

0.1. irg8p08n120kd.pdf Size:659K _international_rectifier

IRG8P08N120KD
IRG8P08N120KD

IRG8B08N120KDPbF IRG8P08N120KDPbF IRG8P08N120KD-EPbF Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode VCES = 1200V CIC = 8A, TC =100C tSC 10s, TJ(max) = 150C E C GE C E VCE(ON) typ. = 1.7V @ IC = 5A G C G G ETO-247AD TO-220AB TO-247AC IRG8P08N120KD-EPbF Applications IRG8B08N120KDPbF IRG8P08N120KDPbF n-channel Ind

9.1. irg8p40n120kd.pdf Size:553K _international_rectifier

IRG8P08N120KD
IRG8P08N120KD

IRG8P40N120KDPbF IRG8P40N120KD-EPbF Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode VCES = 1200V CIC = 40A, TC =100C tSC 10s, TJ(max) = 150C E E GC G C G EVCE(ON) typ. = 1.7V @ IC = 25A IRG8P40N120KDPbFIRG8P40N120KDEPbFn-channelTO247ACTO247ADApplications G C E Industrial Motor Drive Gate Collector E

9.2. irg8p50n120kd.pdf Size:615K _international_rectifier

IRG8P08N120KD
IRG8P08N120KD

IRG8P50N120KDPbF IRG8P50N120KD-EPbF Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode VCES = 1200V CIC = 50A, TC =100C tSC 10s, TJ(max) = 150C C E G E G C G EVCE(ON) typ. = 1.7V @ IC = 35A IRG8P50N120KDPbFIRG8P50N120KDEPbFn-channelTO247ACApplications TO247ADG C E Industrial Motor Drive Gate Collector Em

 9.3. irg8p60n120kd.pdf Size:699K _international_rectifier

IRG8P08N120KD
IRG8P08N120KD

IRG8P60N120KDPbF IRG8P60N120KD-EPbF Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode VCES = 1200V CIC = 60A, TC =100C tSC 10s, TJ(max) = 150C E GE C G G C EVCE(ON) typ. = 1.7V @ IC = 40A IRG8P60N120KDPbFIRG8P60N120KDEPbFn-channelTO247ACTO247ADApplications Industrial Motor Drive G C E UPS Gate

9.4. irg8p25n120kd.pdf Size:654K _international_rectifier

IRG8P08N120KD
IRG8P08N120KD

IRG8P25N120KDPbF IRG8P25N120KD-EPbF Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode VCES = 1200V CIC = 25A, TC =100C E tSC 10s, TJ(max) = 150C E G C C G G EVCE(ON) typ. = 1.7V @ IC = 15A IRG8P25N120KDPbFIRG8P25N120KDEPbFn-channelTO247ACApplications TO247ADG C E Industrial Motor Drive Gate Collector

 9.5. irg8p15n120kd.pdf Size:640K _international_rectifier

IRG8P08N120KD
IRG8P08N120KD

IRG8P15N120KDPbF IRG8P15N120KD-EPbF Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode VCES = 1200V CIC = 15A, TC =100C E tSC 10s, TJ(max) = 150C E GC G G C EVCE(ON) typ. = 1.7V @ IC = 10A IRG8P15N120KDPbFIRG8P15N120KDEPbFn-channelTO247ACApplications TO247ADG C E Industrial Motor Drive Gate Collector E

Datasheet: APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W , IRG4MC50U , 1MBH50D-060 , AOB10B60D , AOK10B60D , AOT10B60D , NGB8207AB , NGB8207B , AOB15B60D , IRGSL8B60K , AOK15B60D .

 

 
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