All IGBT. IRG8P08N120KD Datasheet

 

IRG8P08N120KD Datasheet and Replacement


   Type Designator: IRG8P08N120KD
   Type: IGBT + Anti-Parallel Diode
   Type of IGBT Channel: N
   Pc ⓘ - Maximum Power Dissipation: 89 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 30 V
   |Ic| ⓘ - Maximum Collector Current: 15 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.7 V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 6.5 V
   Tj ⓘ - Maximum Junction Temperature: 150 ℃
   tr ⓘ - Rise Time, typ: 20 nS
   Coesⓘ - Output Capacitance, typ: 30 pF
   Qg ⓘ - Total Gate Charge, typ: 30 nC
   Package: TO247
 

 IRG8P08N120KD substitution

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IRG8P08N120KD Datasheet (PDF)

 ..1. Size:659K  international rectifier
 irg8p08n120kd.pdf pdf_icon

IRG8P08N120KD

IRG8B08N120KDPbF IRG8P08N120KDPbF IRG8P08N120KD-EPbF Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode VCES = 1200V CIC = 8A, TC =100C tSC 10s, TJ(max) = 150C E C GE C E VCE(ON) typ. = 1.7V @ IC = 5A G C G G ETO-247AD TO-220AB TO-247AC IRG8P08N120KD-EPbF Applications IRG8B08N120KDPbF IRG8P08N120KDPbF n-channel Ind

 9.1. Size:654K  international rectifier
 irg8p25n120kd.pdf pdf_icon

IRG8P08N120KD

IRG8P25N120KDPbF IRG8P25N120KD-EPbF Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode VCES = 1200V CIC = 25A, TC =100C E tSC 10s, TJ(max) = 150C E G C C G G EVCE(ON) typ. = 1.7V @ IC = 15A IRG8P25N120KDPbFIRG8P25N120KDEPbFn-channelTO247ACApplications TO247ADG C E Industrial Motor Drive Gate Collector

 9.2. Size:640K  international rectifier
 irg8p15n120kd.pdf pdf_icon

IRG8P08N120KD

IRG8P15N120KDPbF IRG8P15N120KD-EPbF Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode VCES = 1200V CIC = 15A, TC =100C E tSC 10s, TJ(max) = 150C E GC G G C EVCE(ON) typ. = 1.7V @ IC = 10A IRG8P15N120KDPbFIRG8P15N120KDEPbFn-channelTO247ACApplications TO247ADG C E Industrial Motor Drive Gate Collector E

 9.3. Size:615K  international rectifier
 irg8p50n120kd.pdf pdf_icon

IRG8P08N120KD

IRG8P50N120KDPbF IRG8P50N120KD-EPbF Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode VCES = 1200V CIC = 50A, TC =100C tSC 10s, TJ(max) = 150C C E G E G C G EVCE(ON) typ. = 1.7V @ IC = 35A IRG8P50N120KDPbFIRG8P50N120KDEPbFn-channelTO247ACApplications TO247ADG C E Industrial Motor Drive Gate Collector Em

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Datasheet: IRGS4045D , IRGS4610D , STGFW80V60F , IXA12IF1200PC , OM6526SA , STGB7H60DF , STGP7H60DF , IRG8B08N120KD , RJP63K2DPP-M0 , IRGB4615D , IRGS4615D , RJH3077 , RJP63G4 , NTE3310 , KE703A , IKD06N60RA , IRGB4715D .

History: 2MBI300U4N-170-50 | IRG4PC50UDPBF

Keywords - IRG8P08N120KD transistor datasheet

 IRG8P08N120KD cross reference
 IRG8P08N120KD equivalent finder
 IRG8P08N120KD lookup
 IRG8P08N120KD substitution
 IRG8P08N120KD replacement

 

 
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