Справочник IGBT. IRG8P08N120KD

 

IRG8P08N120KD - IGBT справочник. Даташиты. Аналоги. Параметры и характеристики.

Наименование: IRG8P08N120KD

Тип управляющего канала: N-Channel

Максимальная рассеиваемая мощность (Pc): 89

Предельно-допустимое напряжение коллектор-эмиттер (Uce): 1200

Напряжение насыщения коллектор-эмиттер (Ucesat): 1.7

Максимально допустимое напряжение эмиттер-затвор (Ueg): 30

Максимальный постоянный ток коллектора (Ic): 15

Максимальная температура перехода (Tj): 150

Время нарастания: 20

Емкость коллектора (Cc), pf: 30

Корпус: TO247

Аналог (замена) для IRG8P08N120KD

 

 

IRG8P08N120KD Datasheet (PDF)

1.1. irg8p08n120kd.pdf Size:659K _igbt_a

IRG8P08N120KD
IRG8P08N120KD

IRG8B08N120KDPbF IRG8P08N120KDPbF IRG8P08N120KD-EPbF Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode VCES = 1200V C IC = 8A, TC =100°C tSC 10µs, TJ(max) = 150°C E C G E C E VCE(ON) typ. = 1.7V @ IC = 5A G C G G E TO-247AD TO-220AB TO-247AC IRG8P08N120KD-EPbF Applications IRG8B08N120KDPbF IRG8P08N120KDPbF n-channel • Ind

5.1. irg8p40n120kd.pdf Size:553K _igbt_a

IRG8P08N120KD
IRG8P08N120KD

IRG8P40N120KDPbF IRG8P40N120KD-EPbF Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode VCES = 1200V C IC = 40A, TC =100°C tSC 10µs, TJ(max) = 150°C E E G C G C G E VCE(ON) typ. = 1.7V @ IC = 25A IRG8P40N120KDPbF  IRG8P40N120KD‐EPbF  n-channel TO‐247AC  TO‐247AD  Applications G C E • Industrial Motor Drive Gate Collector E

5.2. irg8p15n120kd.pdf Size:640K _igbt_a

IRG8P08N120KD
IRG8P08N120KD

IRG8P15N120KDPbF IRG8P15N120KD-EPbF Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode VCES = 1200V C IC = 15A, TC =100°C E tSC 10µs, TJ(max) = 150°C E G C G G C E VCE(ON) typ. = 1.7V @ IC = 10A IRG8P15N120KDPbF  IRG8P15N120KD‐EPbF  n-channel TO‐247AC  Applications TO‐247AD  G C E • Industrial Motor Drive Gate Collector E

 5.3. irg8p60n120kd.pdf Size:699K _igbt_a

IRG8P08N120KD
IRG8P08N120KD

IRG8P60N120KDPbF IRG8P60N120KD-EPbF Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode VCES = 1200V C IC = 60A, TC =100°C tSC 10µs, TJ(max) = 150°C E G E C G G C E VCE(ON) typ. = 1.7V @ IC = 40A IRG8P60N120KDPbF  IRG8P60N120KD‐EPbF  n-channel TO‐247AC  TO‐247AD  Applications • Industrial Motor Drive G C E • UPS Gate

5.4. irg8p25n120kd.pdf Size:654K _igbt_a

IRG8P08N120KD
IRG8P08N120KD

IRG8P25N120KDPbF IRG8P25N120KD-EPbF Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode VCES = 1200V C IC = 25A, TC =100°C E tSC 10µs, TJ(max) = 150°C E G C C G G E VCE(ON) typ. = 1.7V @ IC = 15A IRG8P25N120KDPbF  IRG8P25N120KD‐EPbF  n-channel TO‐247AC  Applications TO‐247AD  G C E • Industrial Motor Drive Gate Collector

 5.5. irg8p50n120kd.pdf Size:615K _igbt_a

IRG8P08N120KD
IRG8P08N120KD

IRG8P50N120KDPbF IRG8P50N120KD-EPbF Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode VCES = 1200V C IC = 50A, TC =100°C tSC 10µs, TJ(max) = 150°C C E G E G C G E VCE(ON) typ. = 1.7V @ IC = 35A IRG8P50N120KDPbF  IRG8P50N120KD‐EPbF  n-channel TO‐247AC  Applications TO‐247AD  G C E • Industrial Motor Drive Gate Collector Em

Другие IGBT... IRGS4045D , IRGS4610D , STGFW80V60F , IXA12IF1200PC , OM6526SA , STGB7H60DF , STGP7H60DF , IRG8B08N120KD , CT60AM-18F , IRGB4615D , IRGS4615D , 2E715A , 2E715B , NTE3310 , KE703A , IKD06N60RA , IRGB4715D .

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Список транзисторов

Обновления

IGBT: RJP30H2A | GT50JR22 | IRGC16B60KB | IRGC16B120KB | IRGC15B120UB | IRGC15B120KB | IRGC100B60UB | IRGC100B60KB | IRGC100B120UB | IRGC100B120KB |
 


 

 

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