All IGBT. IRGS4615D Datasheet

 

IRGS4615D IGBT. Datasheet pdf. Equivalent

Type Designator: IRGS4615D

Type of IGBT Channel: N-Channel

Maximum Power Dissipation (Pc), W: 99

Maximum Collector-Emitter Voltage |Vce|, V: 600

Collector-Emitter saturation Voltage |Vcesat|, V: 1.55

Maximum Gate-Emitter Voltage |Veg|, V: 20

Maximum Collector Current |Ic|, A: 23

Maximum Junction Temperature (Tj), °C: 175

Rise Time, nS: 15

Maximum Collector Capacity (Cc), pF: 45

Package: TO263

IRGS4615D Transistor Equivalent Substitute - IGBT Cross-Reference Search

IRGS4615D IGBT. Datasheet pdf. Equivalent

Type Designator: IRGS4615D

Type of IGBT Channel: N-Channel

Maximum Power Dissipation (Pc), W: 99

Maximum Collector-Emitter Voltage |Vce|, V: 600

Collector-Emitter saturation Voltage |Vcesat|, V: 1.55

Maximum Gate-Emitter Voltage |Veg|, V: 20

Maximum Collector Current |Ic|, A: 23

Maximum Junction Temperature (Tj), °C: 175

Rise Time, nS: 15

Maximum Collector Capacity (Cc), pF: 45

Package: TO263

IRGS4615D Transistor Equivalent Substitute - IGBT Cross-Reference Search

 

IRGS4615D Datasheet (PDF)

1.1. irgs4615d.pdf Size:336K _igbt

IRGS4615D
IRGS4615D

IRGS4615DPbF IRGB4615DPbF Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode C C VCES = 600V C IC = 15A, TC = 100°C E E C G G tsc > 5µs, Tjmax = 175°C G E VCE(on) typ. = 1.55V @ 8A TO-220AB D2-Pak n-channel IRGB4615DPbF IRGS4615DPbF GCE Gate Collector Emitter Applications • Appliance Drives • Inverters • UPS → Features Benefits Low VCE(

1.2. irgs4615d.pdf Size:336K _international_rectifier

IRGS4615D
IRGS4615D

IRGS4615DPbF IRGB4615DPbF Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode C C VCES = 600V C IC = 15A, TC = 100°C E E C G G tsc > 5µs, Tjmax = 175°C G E VCE(on) typ. = 1.55V @ 8A TO-220AB D2-Pak n-channel IRGB4615DPbF IRGS4615DPbF GCE Gate Collector Emitter Applications • Appliance Drives • Inverters • UPS → Features Benefits Low VCE(

 3.1. irgs4610d.pdf Size:428K _igbt

IRGS4615D
IRGS4615D

IRGR4610DPbF IRGS4610DPbF IRGB4610DPbF Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode C C VCES = 600V C C IC = 10A, TC = 100°C E E E C G G G G tsc > 5µs, Tjmax = 175°C D-Pak E D2-Pak TO-220AB VCE(on) typ. = 1.7V @ 6A IRGR4610DPbF IRGS4610DPbF IRGB4610DPbF n-channel GCE Applications Gate Collector Emitter • Appliance Drives • Inverters •

3.2. irgs4610d.pdf Size:428K _international_rectifier

IRGS4615D
IRGS4615D

IRGR4610DPbF IRGS4610DPbF IRGB4610DPbF Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode C C VCES = 600V C C IC = 10A, TC = 100°C E E E C G G G G tsc > 5µs, Tjmax = 175°C D-Pak E D2-Pak TO-220AB VCE(on) typ. = 1.7V @ 6A IRGR4610DPbF IRGS4610DPbF IRGB4610DPbF n-channel GCE Applications Gate Collector Emitter • Appliance Drives • Inverters •

Datasheet: APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W , IRG4MC50U , 1MBH50D-060 , AOB10B60D , AOK10B60D , AOT10B60D , NGB8207AB , NGB8207B , AOB15B60D , IRGSL8B60K , AOK15B60D .

 

 
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