RJP63G4 IGBT. Datasheet pdf. Equivalent
Type Designator: RJP63G4
Type: IGBT
Type of IGBT Channel: N
Pcⓘ - Maximum Power Dissipation: 160 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
|Ic|ⓘ - Maximum Collector Current: 40 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.8 V @25℃
|VGEth|ⓘ - Maximum G-E Threshold Voltag: 5 V
Tjⓘ - Maximum Junction Temperature: 150 ℃
Package: TO263
RJP63G4 Transistor Equivalent Substitute - IGBT Cross-Reference Search
RJP63G4 Datasheet (PDF)
r07ds0321ej rjp63f3dpp.pdf
Preliminary Datasheet RJP63F3DPP-M0 R07DS0321EJ0200Silicon N Channel IGBT Rev.2.00High Speed Power Switching May 26, 2011Features Trench gate and thin wafer technology (G6H series) Low collector to emitter saturation voltage VCE(sat) = 1.7 V typ High speed switching tf = 100 ns typ Low leak current ICES = 1 A max Isolated package TO-220FL Outline
rjp63f3dpp-m0.pdf
Preliminary Datasheet RJP63F3DPP-M0 R07DS0321EJ0200Silicon N Channel IGBT Rev.2.00High Speed Power Switching May 26, 2011Features Trench gate and thin wafer technology (G6H series) Low collector to emitter saturation voltage VCE(sat) = 1.7 V typ High speed switching tf = 100 ns typ Low leak current ICES = 1 A max Isolated package TO-220FL Outline
r07ds0468ej rjp63k2dpp.pdf
Preliminary Datasheet RJP63K2DPP-M0 R07DS0468EJ0200Silicon N Channel IGBT Rev.2.00High Speed Power Switching Jun 15, 2011Features Trench gate and thin wafer technology (G6H-II series) Low collector to emitter saturation voltage: VCE(sat) = 1.9 V typ High speed switching: tr = 60 ns typ, tf = 200 ns typ. Low leak current: ICES = 1 A max Isolated pa
rjp63k2dpp-m0.pdf
Preliminary Datasheet RJP63K2DPP-M0 R07DS0468EJ0200Silicon N Channel IGBT Rev.2.00High Speed Power Switching Jun 15, 2011Features Trench gate and thin wafer technology (G6H-II series) Low collector to emitter saturation voltage: VCE(sat) = 1.9 V typ High speed switching: tr = 60 ns typ, tf = 200 ns typ. Low leak current: ICES = 1 A max Isolated pa
rjp63k2dpk-m0.pdf
Preliminary Datasheet RJP63K2DPK-M0 R07DS0469EJ0200Silicon N Channel IGBT Rev.2.00High speed power switching Jun 15, 2011Features Trench gate and thin wafer technology (G6H-II series) Low collector to emitter saturation voltage: VCE(sat) = 1.9 V typ High speed switching: tr = 60 ns typ, tf = 200 ns typ. Low leak current: ICES = 1 A max Outline RENES
r07ds0469ej rjp63k2dpk.pdf
Preliminary Datasheet RJP63K2DPK-M0 R07DS0469EJ0200Silicon N Channel IGBT Rev.2.00High speed power switching Jun 15, 2011Features Trench gate and thin wafer technology (G6H-II series) Low collector to emitter saturation voltage: VCE(sat) = 1.9 V typ High speed switching: tr = 60 ns typ, tf = 200 ns typ. Low leak current: ICES = 1 A max Outline RENES
Datasheet: APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W , IRG4MC50U , CRG60T60AK3HD , AOB10B60D , AOK10B60D , AOT10B60D , NGB8207AB , NGB8207B , AOB15B60D , IRGSL8B60K , AOK15B60D .
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