All IGBT. RJP63G4 Datasheet

 

RJP63G4 Datasheet and Replacement


   Type Designator: RJP63G4
   Type: IGBT
   Type of IGBT Channel: N
   Pc ⓘ - Maximum Power Dissipation: 160 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
   |Ic| ⓘ - Maximum Collector Current: 40 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.8 V @25℃
   Tj ⓘ - Maximum Junction Temperature: 150 ℃
   Package: TO263
 

 RJP63G4 substitution

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RJP63G4 Datasheet (PDF)

 9.1. Size:179K  renesas
 r07ds0321ej rjp63f3dpp.pdf pdf_icon

RJP63G4

Preliminary Datasheet RJP63F3DPP-M0 R07DS0321EJ0200Silicon N Channel IGBT Rev.2.00High Speed Power Switching May 26, 2011Features Trench gate and thin wafer technology (G6H series) Low collector to emitter saturation voltage VCE(sat) = 1.7 V typ High speed switching tf = 100 ns typ Low leak current ICES = 1 A max Isolated package TO-220FL Outline

 9.2. Size:159K  renesas
 rjp63f3dpp-m0.pdf pdf_icon

RJP63G4

Preliminary Datasheet RJP63F3DPP-M0 R07DS0321EJ0200Silicon N Channel IGBT Rev.2.00High Speed Power Switching May 26, 2011Features Trench gate and thin wafer technology (G6H series) Low collector to emitter saturation voltage VCE(sat) = 1.7 V typ High speed switching tf = 100 ns typ Low leak current ICES = 1 A max Isolated package TO-220FL Outline

 9.3. Size:145K  renesas
 r07ds0468ej rjp63k2dpp.pdf pdf_icon

RJP63G4

Preliminary Datasheet RJP63K2DPP-M0 R07DS0468EJ0200Silicon N Channel IGBT Rev.2.00High Speed Power Switching Jun 15, 2011Features Trench gate and thin wafer technology (G6H-II series) Low collector to emitter saturation voltage: VCE(sat) = 1.9 V typ High speed switching: tr = 60 ns typ, tf = 200 ns typ. Low leak current: ICES = 1 A max Isolated pa

 9.4. Size:124K  renesas
 rjp63k2dpp-m0.pdf pdf_icon

RJP63G4

Preliminary Datasheet RJP63K2DPP-M0 R07DS0468EJ0200Silicon N Channel IGBT Rev.2.00High Speed Power Switching Jun 15, 2011Features Trench gate and thin wafer technology (G6H-II series) Low collector to emitter saturation voltage: VCE(sat) = 1.9 V typ High speed switching: tr = 60 ns typ, tf = 200 ns typ. Low leak current: ICES = 1 A max Isolated pa

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History: MG50J6ES50

Keywords - RJP63G4 transistor datasheet

 RJP63G4 cross reference
 RJP63G4 equivalent finder
 RJP63G4 lookup
 RJP63G4 substitution
 RJP63G4 replacement

 

 
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