RJP63G4 PDF and Equivalents Search

 

RJP63G4 Specs and Replacement

Type Designator: RJP63G4

Type: IGBT

Type of IGBT Channel: N

Absolute Maximum Ratings

Pc ⓘ - Maximum Power Dissipation: 160 W

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V

|Ic| ⓘ - Maximum Collector Current: 40 A @25℃

Tj ⓘ - Maximum Junction Temperature: 150 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.8 V @25℃

Package: TO263

 RJP63G4 Substitution

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RJP63G4 datasheet

 9.1. Size:179K  renesas
r07ds0321ej rjp63f3dpp.pdf pdf_icon

RJP63G4

Preliminary Datasheet RJP63F3DPP-M0 R07DS0321EJ0200 Silicon N Channel IGBT Rev.2.00 High Speed Power Switching May 26, 2011 Features Trench gate and thin wafer technology (G6H series) Low collector to emitter saturation voltage VCE(sat) = 1.7 V typ High speed switching tf = 100 ns typ Low leak current ICES = 1 A max Isolated package TO-220FL Outline... See More ⇒

 9.2. Size:159K  renesas
rjp63f3dpp-m0.pdf pdf_icon

RJP63G4

Preliminary Datasheet RJP63F3DPP-M0 R07DS0321EJ0200 Silicon N Channel IGBT Rev.2.00 High Speed Power Switching May 26, 2011 Features Trench gate and thin wafer technology (G6H series) Low collector to emitter saturation voltage VCE(sat) = 1.7 V typ High speed switching tf = 100 ns typ Low leak current ICES = 1 A max Isolated package TO-220FL Outline... See More ⇒

 9.3. Size:145K  renesas
r07ds0468ej rjp63k2dpp.pdf pdf_icon

RJP63G4

Preliminary Datasheet RJP63K2DPP-M0 R07DS0468EJ0200 Silicon N Channel IGBT Rev.2.00 High Speed Power Switching Jun 15, 2011 Features Trench gate and thin wafer technology (G6H-II series) Low collector to emitter saturation voltage VCE(sat) = 1.9 V typ High speed switching tr = 60 ns typ, tf = 200 ns typ. Low leak current ICES = 1 A max Isolated pa... See More ⇒

 9.4. Size:124K  renesas
rjp63k2dpp-m0.pdf pdf_icon

RJP63G4

Preliminary Datasheet RJP63K2DPP-M0 R07DS0468EJ0200 Silicon N Channel IGBT Rev.2.00 High Speed Power Switching Jun 15, 2011 Features Trench gate and thin wafer technology (G6H-II series) Low collector to emitter saturation voltage VCE(sat) = 1.9 V typ High speed switching tr = 60 ns typ, tf = 200 ns typ. Low leak current ICES = 1 A max Isolated pa... See More ⇒

Specs: OM6526SA , STGB7H60DF , STGP7H60DF , IRG8B08N120KD , IRG8P08N120KD , IRGB4615D , IRGS4615D , RJH3077 , GT30J124 , NTE3310 , KE703A , IKD06N60RA , IRGB4715D , IRGS4715D , IRGS4064D , MG1215H-XBN2MM , IKP15N65F5 .

History: STGP7NC60H | STGP30NC60K

Keywords - RJP63G4 transistor spec

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History: STGP7NC60H | STGP30NC60K

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