NTE3310 PDF and Equivalents Search

 ..1. Size:43K  no
 nte3310.pdf

NTE3310 Insulated Gate Bipolar Transistor N-Channel Enhancement Mode, High Speed Switch Features D High Input Impedance D High Speed D Low Saturation Voltage D Enhancement Mode Applications D High Power Switching D Motor Control Absolute Maximum Raings (TA = +25 C unless otherwise specified) Collector-Emitter Voltage, VCES . . . . . . . . . . . . . . . . . . . . . . . . . . . .... See More ⇒

 8.1. Size:55K  1
 nte3312.pdf

NTE3312 Insulated Gate Bipolar Transistor N-Channel Enhancement Mode, High Speed Switch TO3P Type Package Features D High Input Impedance D High Speed D Low Saturation Voltage D Enhancement Mode Applications D High Power Switching D Motor Control Absolute Maximum Raings (TA = +25_C unless otherwise specified) Collector-Emitter Voltage, VCES . . . . . . . . . . . . . . . . . . .... See More ⇒

 8.2. Size:43K  no
 nte3311.pdf

NTE3311 Insulated Gate Bipolar Transistor N-Channel Enhancement Mode, High Speed Switch Features D High Input Impedance D High Speed D Low Saturation Voltage D Enhancement Mode Applications D High Power Switching D Motor Control Absolute Maximum Raings (TA = +25 C unless otherwise specified) Collector-Emitter Voltage, VCES . . . . . . . . . . . . . . . . . . . . . . . . . . . .... See More ⇒

 9.1. Size:58K  1
 nte3321.pdf

NTE3321 Insulated Gate Bipolar Transistor N-Channel Enhancement Mode, High Speed Switch TO3P Type Package Features D High Input Impedance D High Speed D Low Saturation Voltage D Enhancement Mode Applications D High Power Switching Absolute Maximum Ratings (TA = +25_C unless otherwise specified) Collector-Emitter Voltage, VCES . . . . . . . . . . . . . . . . . . . . . . . . . . .... See More ⇒

 9.2. Size:45K  no
 nte3323.pdf

NTE3323 Insulated Gate Bipolar Transistor N-Channel Enhancement Mode, High Speed Switch Features D High Input Impedance D High Speed D Low Saturation Voltage D Enhancement Mode Applications D High Power Switching D Motor Control Absolute Maximum Raings (TA = +25 C unless otherwise specified) Collector-Emitter Voltage, VCES . . . . . . . . . . . . . . . . . . . . . . . . . . . .... See More ⇒

 9.3. Size:44K  no
 nte3302.pdf

NTE3302 Insulated Gate Bipolar Transistor N-Channel Enhancement Mode, High Speed Switch Features D High Input Impedance D High Speed D Low Saturation Voltage D Enhancement Mode Applications D High Power Switching D Motor Control Absolute Maximum Raings (TA = +25 C unless otherwise specified) Collector-Emitter Voltage, VCES . . . . . . . . . . . . . . . . . . . . . . . . . . . .... See More ⇒

 9.4. Size:69K  no
 nte3322.pdf

NTE3322 Insulated Gate Bipolar Transistor N-Channel Enhancement Mode, High Speed Switch TO3PBL Features D Enhancemnt Mode Type D FRD Included Bwetwen Emitter and Collector D High Speed D Low Saturation Voltage Applications D High Power Switching Absolute Maximum Raings (TA = +25 C unless otherwise specified) Collector-Emitter Voltage, VCES . . . . . . . . . . . . . . . . . . . ... See More ⇒

 9.5. Size:44K  no
 nte3301.pdf

NTE3301 Insulated Gate Bipolar Transistor N-Channel Enhancement Mode, High Speed Switch Features D High Input Impedance D Low Saturation Voltage D Enhancement Mode D 20V Gate Drive Applications D High Power Switching D Motor Control Absolute Maximum Raings (TA = +25 C unless otherwise specified) Collector-Emitter Voltage, VCES . . . . . . . . . . . . . . . . . . . . . . . . . .... See More ⇒

 9.6. Size:44K  no
 nte3300.pdf

NTE3300 Insulated Gate Bipolar Transistor N-Channel Enhancement Mode, High Speed Switch Features D High Input Impedance D Low Saturation Voltage D Enhancement Mode D 20V Gate Drive Applications D High Power Switching D Motor Control Absolute Maximum Raings (TA = +25 C unless otherwise specified) Collector-Emitter Voltage, VCES . . . . . . . . . . . . . . . . . . . . . . . . . .... See More ⇒

 9.7. Size:43K  no
 nte3320.pdf

NTE3320 Insulated Gate Bipolar Transistor N-Channel Enhancement Mode, High Speed Switch Features D Fourth Generation IGBT D Enhancement Mode Type D High Speed D Low Switching Loss D Low Saturation Voltage Applications D High Power Switching Absolute Maximum Raings (TA = +25 C unless otherwise specified) Collector-Emitter Voltage, VCES . . . . . . . . . . . . . . . . . . . . . .... See More ⇒

 9.8. Size:45K  no
 nte3303.pdf

NTE3303 Insulated Gate Bipolar Transistor N-Channel Enhancement Mode, High Speed Switch Features D High Input Impedance D High Speed D Low Saturation Voltage D Enhancement Mode Applications D High Power Switching D Motor Control Absolute Maximum Raings (TA = +25 C unless otherwise specified) Collector-Emitter Voltage, VCES . . . . . . . . . . . . . . . . . . . . . . . . . . . .... See More ⇒