All IGBT. NTE3310 Datasheet

 

NTE3310 IGBT. Datasheet pdf. Equivalent


   Type Designator: NTE3310
   Type: IGBT
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 100 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic|ⓘ - Maximum Collector Current: 15 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 3 V @25℃
   Tjⓘ - Maximum Junction Temperature: 150 ℃
   trⓘ - Rise Time, typ: 300 nS
   Package: TO247

 NTE3310 Transistor Equivalent Substitute - IGBT Cross-Reference Search

 

NTE3310 Datasheet (PDF)

 ..1. Size:43K  no
 nte3310.pdf

NTE3310 NTE3310

NTE3310Insulated Gate Bipolar TransistorN-Channel Enhancement Mode,High Speed SwitchFeatures:D High Input ImpedanceD High SpeedD Low Saturation VoltageD Enhancement ModeApplications:D High Power SwitchingD Motor ControlAbsolute Maximum Raings: (TA = +25C unless otherwise specified)Collector-Emitter Voltage, VCES . . . . . . . . . . . . . . . . . . . . . . . . . . . .

 8.1. Size:55K  1
 nte3312.pdf

NTE3310 NTE3310

NTE3312Insulated Gate Bipolar TransistorN-Channel Enhancement Mode,High Speed SwitchTO3P Type PackageFeatures:D High Input ImpedanceD High SpeedD Low Saturation VoltageD Enhancement ModeApplications:D High Power SwitchingD Motor ControlAbsolute Maximum Raings: (TA = +25_C unless otherwise specified)Collector-Emitter Voltage, VCES . . . . . . . . . . . . . . . . . . .

 8.2. Size:43K  no
 nte3311.pdf

NTE3310 NTE3310

NTE3311Insulated Gate Bipolar TransistorN-Channel Enhancement Mode,High Speed SwitchFeatures:D High Input ImpedanceD High SpeedD Low Saturation VoltageD Enhancement ModeApplications:D High Power SwitchingD Motor ControlAbsolute Maximum Raings: (TA = +25C unless otherwise specified)Collector-Emitter Voltage, VCES . . . . . . . . . . . . . . . . . . . . . . . . . . . .

 9.1. Size:58K  1
 nte3321.pdf

NTE3310 NTE3310

NTE3321Insulated Gate Bipolar TransistorN-Channel Enhancement Mode,High Speed SwitchTO3P Type PackageFeatures:D High Input ImpedanceD High SpeedD Low Saturation VoltageD Enhancement ModeApplications:D High Power SwitchingAbsolute Maximum Ratings: (TA = +25_C unless otherwise specified)Collector-Emitter Voltage, VCES . . . . . . . . . . . . . . . . . . . . . . . . . . .

 9.2. Size:45K  no
 nte3323.pdf

NTE3310 NTE3310

NTE3323Insulated Gate Bipolar TransistorN-Channel Enhancement Mode,High Speed SwitchFeatures:D High Input ImpedanceD High SpeedD Low Saturation VoltageD Enhancement ModeApplications:D High Power SwitchingD Motor ControlAbsolute Maximum Raings: (TA = +25C unless otherwise specified)Collector-Emitter Voltage, VCES . . . . . . . . . . . . . . . . . . . . . . . . . . . .

 9.3. Size:44K  no
 nte3302.pdf

NTE3310 NTE3310

NTE3302Insulated Gate Bipolar TransistorN-Channel Enhancement Mode,High Speed SwitchFeatures:D High Input ImpedanceD High SpeedD Low Saturation VoltageD Enhancement ModeApplications:D High Power SwitchingD Motor ControlAbsolute Maximum Raings: (TA = +25C unless otherwise specified)Collector-Emitter Voltage, VCES . . . . . . . . . . . . . . . . . . . . . . . . . . . .

 9.4. Size:69K  no
 nte3322.pdf

NTE3310 NTE3310

NTE3322Insulated Gate Bipolar TransistorN-Channel Enhancement Mode,High Speed SwitchTO3PBLFeatures:D Enhancemnt Mode TypeD FRD Included Bwetwen Emitter and CollectorD High SpeedD Low Saturation VoltageApplications:D High Power SwitchingAbsolute Maximum Raings: (TA = +25C unless otherwise specified)Collector-Emitter Voltage, VCES . . . . . . . . . . . . . . . . . . .

 9.5. Size:44K  no
 nte3301.pdf

NTE3310 NTE3310

NTE3301Insulated Gate Bipolar TransistorN-Channel Enhancement Mode,High Speed SwitchFeatures:D High Input ImpedanceD Low Saturation VoltageD Enhancement ModeD 20V Gate DriveApplications:D High Power SwitchingD Motor ControlAbsolute Maximum Raings: (TA = +25C unless otherwise specified)Collector-Emitter Voltage, VCES . . . . . . . . . . . . . . . . . . . . . . . . . .

 9.6. Size:44K  no
 nte3300.pdf

NTE3310 NTE3310

NTE3300Insulated Gate Bipolar TransistorN-Channel Enhancement Mode,High Speed SwitchFeatures:D High Input ImpedanceD Low Saturation VoltageD Enhancement ModeD 20V Gate DriveApplications:D High Power SwitchingD Motor ControlAbsolute Maximum Raings: (TA = +25C unless otherwise specified)Collector-Emitter Voltage, VCES . . . . . . . . . . . . . . . . . . . . . . . . . .

 9.7. Size:43K  no
 nte3320.pdf

NTE3310 NTE3310

NTE3320Insulated Gate Bipolar TransistorN-Channel Enhancement Mode,High Speed SwitchFeatures:D Fourth Generation IGBTD Enhancement Mode TypeD High SpeedD Low Switching LossD Low Saturation VoltageApplications:D High Power SwitchingAbsolute Maximum Raings: (TA = +25C unless otherwise specified)Collector-Emitter Voltage, VCES . . . . . . . . . . . . . . . . . . . . . .

 9.8. Size:45K  no
 nte3303.pdf

NTE3310 NTE3310

NTE3303Insulated Gate Bipolar TransistorN-Channel Enhancement Mode,High Speed SwitchFeatures:D High Input ImpedanceD High SpeedD Low Saturation VoltageD Enhancement ModeApplications:D High Power SwitchingD Motor ControlAbsolute Maximum Raings: (TA = +25C unless otherwise specified)Collector-Emitter Voltage, VCES . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Datasheet: AP05G120SW-HF , TSG10N120CN , AP05G120NSW-HF , AP20GT60SW , AP20GT60W , CI15T60 , MMIX4B12N300 , NGD8205A , GT30F126 , IXYP8N90C3D1 , APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W .

 

 
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