All IGBT. NGTB15N120FLWG Datasheet

 

NGTB15N120FLWG Datasheet and Replacement


   Type Designator: NGTB15N120FLWG
   Type: IGBT + Anti-Parallel Diode
   Marking Code: 15N120FL
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 156 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic|ⓘ - Maximum Collector Current: 15 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2 V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 6.5 V
   Tjⓘ - Maximum Junction Temperature: 150 ℃
   trⓘ - Rise Time, typ: 19 nS
   Coesⓘ - Output Capacitance, typ: 110 pF
   Qgⓘ - Total Gate Charge, typ: 150 nC
   Package: TO247
      - IGBT Cross-Reference

 

NGTB15N120FLWG Datasheet (PDF)

 ..1. Size:185K  onsemi
ngtb15n120flwg.pdf pdf_icon

NGTB15N120FLWG

NGTB15N120FLWGIGBTThis Insulated Gate Bipolar Transistor (IGBT) features a robust andcost effective Trench construction, and provides superior performancein demanding switching applications, offering both low on statevoltage and minimal switching loss. The IGBT is well suited for UPSand solar applications. Incorporated into the device is a soft and fastco-packaged free wheeling di

 2.1. Size:267K  onsemi
ngtb15n120fl2wg.pdf pdf_icon

NGTB15N120FLWG

NGTB15N120FL2WGIGBT - Field Stop IIThis Insulated Gate Bipolar Transistor (IGBT) features a robust andcost effective Field Stop II Trench construction, and provides superiorperformance in demanding switching applications, offering both lowon state voltage and minimal switching loss. The IGBT is well suitedfor UPS and solar applications. Incorporated into the device is a softwww.on

 2.2. Size:233K  onsemi
ngtb15n120fl2.pdf pdf_icon

NGTB15N120FLWG

NGTB15N120FL2WGIGBT - Field Stop IIThis Insulated Gate Bipolar Transistor (IGBT) features a robust andcost effective Field Stop II Trench construction, and provides superiorperformance in demanding switching applications, offering both lowon state voltage and minimal switching loss. The IGBT is well suitedfor UPS and solar applications. Incorporated into the device is a softand fa

 2.3. Size:185K  onsemi
ngtb15n120fl.pdf pdf_icon

NGTB15N120FLWG

NGTB15N120FLWGIGBTThis Insulated Gate Bipolar Transistor (IGBT) features a robust andcost effective Trench construction, and provides superior performancein demanding switching applications, offering both low on statevoltage and minimal switching loss. The IGBT is well suited for UPSand solar applications. Incorporated into the device is a soft and fastco-packaged free wheeling di

Datasheet: IRG4MC50F , SGTN15C120HW , STGB18N40LZT4 , STGP30H65F , KGF20N60KDA , KGF20N60PA , NGTB15N120IHL , NGTB15N120FL , TGPF30N43P , NGTB15N120L , NGTB15N120LWG , NGTB20N120IHS , NGTB20N120IHSWG , AUIRG4PC40S-E , KGF15N120KDA , IRG7PK35UD1 , NGTB30N60FLWG .

History: IXGK35N120CD1 | IXEH25N120 | MGS13002D | SGW25N120 | IKD10N60R | IXGH20N30

Keywords - NGTB15N120FLWG transistor datasheet

 NGTB15N120FLWG cross reference
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