NGTB15N120FLWG IGBT. Datasheet pdf. Equivalent

   Type Designator: NGTB15N120FLWG
   Type: IGBT + Anti-Parallel Diode
   Marking Code: 15N120FL
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 156 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic|ⓘ - Maximum Collector Current: 15 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2 V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 6.5 V
   Tjⓘ - Maximum Junction Temperature: 150 ℃
   trⓘ - Rise Time, typ: 19 nS
   Coesⓘ - Output Capacitance, typ: 110 pF
   Qgⓘ - Total Gate Charge, typ: 150 nC
   Package: TO247

NGTB15N120FLWG Transistor Equivalent Substitute - IGBT Cross-Reference Search

NGTB15N120FLWG Datasheet (PDF)

..1. Size:185K onsemi
ngtb15n120flwg.pdf

NGTB15N120FLWGIGBTThis Insulated Gate Bipolar Transistor (IGBT) features a robust andcost effective Trench construction, and provides superior performancein demanding switching applications, offering both low on statevoltage and minimal switching loss. The IGBT is well suited for UPSand solar applications. Incorporated into the device is a soft and fastco-packaged free wheeling di

2.1. Size:267K onsemi
ngtb15n120fl2wg.pdf

NGTB15N120FL2WGIGBT - Field Stop IIThis Insulated Gate Bipolar Transistor (IGBT) features a robust andcost effective Field Stop II Trench construction, and provides superiorperformance in demanding switching applications, offering both lowon state voltage and minimal switching loss. The IGBT is well suitedfor UPS and solar applications. Incorporated into the device is a softwww.on

2.2. Size:233K onsemi
ngtb15n120fl2.pdf