NGTB15N120FLWG - аналоги и описание IGBT

 

NGTB15N120FLWG - Аналоги. Основные параметры


   Наименование: NGTB15N120FLWG
   Тип транзистора: IGBT
   Тип управляющего канала: N
   Pc ⓘ - Максимальная рассеиваемая мощность: 156 W
   |Vce|ⓘ - Предельно-допустимое напряжение коллектор-эмиттер: 1200 V
   |Vge|ⓘ - Максимально допустимое напряжение эмиттер-затвор: 20 V
   |Ic| ⓘ - Максимальный постоянный ток коллектора: 15 A @25℃
   |VCEsat|ⓘ - Напряжение насыщения коллектор-эмиттер типовое: 2 V @25℃
   Tj ⓘ - Максимальная температура перехода: 150 ℃
   tr ⓘ - Время нарастания типовое: 19 nS
   Coesⓘ - Выходная емкость, типовая: 110 pF
   Тип корпуса: TO247
 

 Аналог (замена) для NGTB15N120FLWG

   - подбор ⓘ IGBT транзистора по параметрам

 

Технические параметры NGTB15N120FLWG

 ..1. Size:185K  onsemi
 ngtb15n120flwg.pdf pdf_icon

NGTB15N120FLWG

NGTB15N120FLWG IGBT This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss. The IGBT is well suited for UPS and solar applications. Incorporated into the device is a soft and fast co-packaged free wheeling di

 2.1. Size:267K  onsemi
 ngtb15n120fl2wg.pdf pdf_icon

NGTB15N120FLWG

NGTB15N120FL2WG IGBT - Field Stop II This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop II Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss. The IGBT is well suited for UPS and solar applications. Incorporated into the device is a soft www.on

 2.2. Size:233K  onsemi
 ngtb15n120fl2.pdf pdf_icon

NGTB15N120FLWG

NGTB15N120FL2WG IGBT - Field Stop II This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop II Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss. The IGBT is well suited for UPS and solar applications. Incorporated into the device is a soft and fa

 2.3. Size:185K  onsemi
 ngtb15n120fl.pdf pdf_icon

NGTB15N120FLWG

NGTB15N120FLWG IGBT This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss. The IGBT is well suited for UPS and solar applications. Incorporated into the device is a soft and fast co-packaged free wheeling di

ПОКАЗАТЬ ЕЩЁ

Другие IGBT... IRG4MC50F , SGTN15C120HW , STGB18N40LZT4 , STGP30H65F , KGF20N60KDA , KGF20N60PA , NGTB15N120IHL , NGTB15N120FL , CRG75T60AK3HD , NGTB15N120L , NGTB15N120LWG , NGTB20N120IHS , NGTB20N120IHSWG , AUIRG4PC40S-E , KGF15N120KDA , IRG7PK35UD1 , NGTB30N60FLWG .

History: IXYP10N65C3 | IXGX32N170H1

 

 
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