All IGBT. NGTB30N60FWG Datasheet

 

NGTB30N60FWG IGBT. Datasheet pdf. Equivalent

Type Designator: NGTB30N60FWG

Marking Code: 30N60F

Type of IGBT Channel: N-Channel

Maximum Power Dissipation (Pc), W: 167

Maximum Collector-Emitter Voltage |Vce|, V: 600

Collector-Emitter saturation Voltage |Vcesat|, V: 1.45

Maximum Gate-Emitter Voltage |Veg|, V: 20

Maximum Collector Current |Ic|, A: 30

Maximum Junction Temperature (Tj), °C: 150

Rise Time, nS: 31

Maximum Collector Capacity (Cc), pF: 150

Package: TO247

NGTB30N60FWG Transistor Equivalent Substitute - IGBT Cross-Reference Search

 

NGTB30N60FWG Datasheet (PDF)

1.1. ngtb30n60flwg.pdf Size:181K _igbt

NGTB30N60FWG
NGTB30N60FWG

NGTB30N60FLWG IGBT This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss. http://onsemi.com Features • Low Saturation Voltage using Trench with Field Stop Technology 30 A, 600 V • Low Switching Loss R

1.2. ngtb30n60ihlwg.pdf Size:179K _igbt

NGTB30N60FWG
NGTB30N60FWG

NGTB30N60IHLWG IGBT This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop (FS) Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss. The IGBT is well suited for half bridge resonant applications. Incorporated into the http://onsemi.com device is a

1.3. ngtb30n60fwg.pdf Size:181K _igbt

NGTB30N60FWG
NGTB30N60FWG

NGTB30N60FWG IGBT This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss. http://onsemi.com Features • Optimized for Very Low VCEsat 30 A, 600 V • Low Switching Loss Reduces System Power Dissipation V

1.4. ngtb30n60s.pdf Size:94K _igbt

NGTB30N60FWG
NGTB30N60FWG

NGTB30N60SWG IGBT This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop (FS) Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss. The IGBT is well suited for half bridge resonant applications. Incorporated into the device is a soft and fast co-pack

1.5. ngtb30n60swg.pdf Size:94K _igbt

NGTB30N60FWG
NGTB30N60FWG

NGTB30N60SWG IGBT This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop (FS) Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss. The IGBT is well suited for half bridge resonant applications. Incorporated into the device is a soft and fast co-pack

Datasheet: NGTB15N120L , NGTB15N120LWG , NGTB20N120IHS , NGTB20N120IHSWG , AUIRG4PC40S-E , KGF15N120KDA , IRG7PK35UD1 , NGTB30N60FLWG , IRGB20B60PD1 , NGTG30N60FLWG , NGTG30N60FWG , STGB20V60DF , STGB20V60F , STGFW20V60F , STGP20V60DF , STGP20V60F , STGW20V60DF .

 


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IGBT: IRGC16B60KB | IRGC16B120KB | IRGC15B120UB | IRGC15B120KB | IRGC100B60UB | IRGC100B60KB | IRGC100B120UB | IRGC100B120KB | IGC70T120T6RL | SIGC05T60SNC |