Справочник IGBT. NGTB30N60FWG

 

NGTB30N60FWG - IGBT справочник. Даташиты. Аналоги. Параметры и характеристики.

Наименование: NGTB30N60FWG

Маркировка: 30N60F

Тип управляющего канала: N-Channel

Максимальная рассеиваемая мощность (Pc): 167

Предельно-допустимое напряжение коллектор-эмиттер (Uce): 600

Напряжение насыщения коллектор-эмиттер (Ucesat): 1.45

Максимально допустимое напряжение эмиттер-затвор (Ueg): 20

Максимальный постоянный ток коллектора (Ic): 30

Максимальная температура перехода (Tj): 150

Время нарастания: 31

Емкость коллектора (Cc), pf: 150

Корпус: TO247

Аналог (замена) для NGTB30N60FWG  

 

 

NGTB30N60FWG Datasheet (PDF)

1.1. ngtb30n60flwg.pdf Size:181K _igbt

NGTB30N60FWG
NGTB30N60FWG

NGTB30N60FLWG IGBT This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss. http://onsemi.com Features • Low Saturation Voltage using Trench with Field Stop Technology 30 A, 600 V • Low Switching Loss R

1.2. ngtb30n60ihlwg.pdf Size:179K _igbt

NGTB30N60FWG
NGTB30N60FWG

NGTB30N60IHLWG IGBT This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop (FS) Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss. The IGBT is well suited for half bridge resonant applications. Incorporated into the http://onsemi.com device is a

 1.3. ngtb30n60fwg.pdf Size:181K _igbt

NGTB30N60FWG
NGTB30N60FWG

NGTB30N60FWG IGBT This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss. http://onsemi.com Features • Optimized for Very Low VCEsat 30 A, 600 V • Low Switching Loss Reduces System Power Dissipation V

1.4. ngtb30n60s.pdf Size:94K _igbt

NGTB30N60FWG
NGTB30N60FWG

NGTB30N60SWG IGBT This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop (FS) Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss. The IGBT is well suited for half bridge resonant applications. Incorporated into the device is a soft and fast co-pack

 1.5. ngtb30n60swg.pdf Size:94K _igbt

NGTB30N60FWG
NGTB30N60FWG

NGTB30N60SWG IGBT This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop (FS) Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss. The IGBT is well suited for half bridge resonant applications. Incorporated into the device is a soft and fast co-pack

Другие IGBT... NGTB15N120L , NGTB15N120LWG , NGTB20N120IHS , NGTB20N120IHSWG , AUIRG4PC40S-E , KGF15N120KDA , IRG7PK35UD1 , NGTB30N60FLWG , IRGB20B60PD1 , NGTG30N60FLWG , NGTG30N60FWG , STGB20V60DF , STGB20V60F , STGFW20V60F , STGP20V60DF , STGP20V60F , STGW20V60DF .

 

 

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Список транзисторов

Обновления

IGBT: RJP30H2A | GT50JR22 | IRGC16B60KB | IRGC16B120KB | IRGC15B120UB | IRGC15B120KB | IRGC100B60UB | IRGC100B60KB | IRGC100B120UB | IRGC100B120KB |
 

 

 

 

 
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