All IGBT. NGTG30N60FWG Datasheet

 

NGTG30N60FWG Datasheet and Replacement


   Type Designator: NGTG30N60FWG
   Type: IGBT
   Marking Code: G30N60F
   Type of IGBT Channel: N
   Pc ⓘ - Maximum Power Dissipation: 167 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic| ⓘ - Maximum Collector Current: 30 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.45 V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 6.5 V
   Tj ⓘ - Maximum Junction Temperature: 150 ℃
   tr ⓘ - Rise Time, typ: 31 nS
   Coesⓘ - Output Capacitance, typ: 115 pF
   Qg ⓘ - Total Gate Charge, typ: 170 nC
   Package: TO247
 

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NGTG30N60FWG Datasheet (PDF)

 ..1. Size:169K  onsemi
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NGTG30N60FWG

NGTG30N60FWGIGBTThis Insulated Gate Bipolar Transistor (IGBT) features a robust andcost effective Trench construction, and provides superior performancein demanding switching applications, offering both low on statevoltage and minimal switching loss.http://onsemi.comFeatures Optimized for Very Low VCEsat Low Switching Loss Reduces System Power Dissipation30 A, 600 V

 4.1. Size:173K  onsemi
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NGTG30N60FWG

NGTG30N60FLWGIGBTThis Insulated Gate Bipolar Transistor (IGBT) features a robust andcost effective Trench construction, and provides superior performancein demanding switching applications, offering both low on statevoltage and minimal switching loss.http://onsemi.comFeatures Low Saturation Voltage using Trench with Field Stop Technology Low Switching Loss Reduces System

 9.1. Size:84K  onsemi
 ngtg35n65fl2.pdf pdf_icon

NGTG30N60FWG

NGTG35N65FL2WGIGBT - Field Stop IIThis Insulated Gate Bipolar Transistor (IGBT) features a robust andcost effective Field Stop II Trench construction, and provides superiorperformance in demanding switching applications, offering both lowon state voltage and minimal switching loss. The IGBT is well suitedfor UPS and solar applications.http://onsemi.comFeatures Extremely Eff

 9.2. Size:82K  onsemi
 ngtg35n65fl2wg.pdf pdf_icon

NGTG30N60FWG

NGTG35N65FL2WGIGBT - Field Stop IIThis Insulated Gate Bipolar Transistor (IGBT) features a robust andcost effective Field Stop II Trench construction, and provides superiorperformance in demanding switching applications, offering both lowon state voltage and minimal switching loss. The IGBT is well suitedfor UPS and solar applications.www.onsemi.comFeatures Extremely Effici

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Datasheet: APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W , IRG4MC50U , IKW30N60H3 , AOB10B60D , AOK10B60D , AOT10B60D , NGB8207AB , NGB8207B , AOB15B60D , IRGSL8B60K , AOK15B60D .

History: BG200B12UY3-I | STGW60H65DFB | BGF15T65SD | IXXA50N60B3 | TGAN20N135F3D | APTGS50X170E2 | IKFW40N60DH3E

Keywords - NGTG30N60FWG transistor datasheet

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