All IGBT. NGTG30N60FWG Datasheet

 

NGTG30N60FWG IGBT. Datasheet pdf. Equivalent

Type Designator: NGTG30N60FWG

Marking Code: G30N60F

Type of IGBT Channel: N-Channel

Maximum Power Dissipation (Pc), W: 167

Maximum Collector-Emitter Voltage |Vce|, V: 600

Collector-Emitter saturation Voltage |Vcesat|, V: 1.45

Maximum Gate-Emitter Voltage |Veg|, V: 20

Maximum Collector Current |Ic|, A: 30

Maximum Junction Temperature (Tj), °C: 150

Rise Time, nS: 31

Maximum Collector Capacity (Cc), pF: 115

Package: TO247

NGTG30N60FWG Transistor Equivalent Substitute - IGBT Cross-Reference Search

 

NGTG30N60FWG Datasheet (PDF)

1.1. ngtg30n60flwg.pdf Size:173K _igbt

NGTG30N60FWG
NGTG30N60FWG

NGTG30N60FLWG IGBT This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss. http://onsemi.com Features • Low Saturation Voltage using Trench with Field Stop Technology • Low Switching Loss Reduces System

1.2. ngtg30n60fwg.pdf Size:173K _igbt

NGTG30N60FWG
NGTG30N60FWG

NGTG30N60FWG IGBT This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss. http://onsemi.com Features • Optimized for Very Low VCEsat • Low Switching Loss Reduces System Power Dissipation 30 A, 600 V

5.1. ngtg35n65fl2.pdf Size:84K _igbt

NGTG30N60FWG
NGTG30N60FWG

NGTG35N65FL2WG IGBT - Field Stop II This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop II Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss. The IGBT is well suited for UPS and solar applications. http://onsemi.com Features • Extremely Eff

5.2. ngtg35n65fl2wg.pdf Size:84K _igbt

NGTG30N60FWG
NGTG30N60FWG

NGTG35N65FL2WG IGBT - Field Stop II This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop II Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss. The IGBT is well suited for UPS and solar applications. http://onsemi.com Features • Extremely Eff

Datasheet: NGTB20N120IHS , NGTB20N120IHSWG , AUIRG4PC40S-E , KGF15N120KDA , IRG7PK35UD1 , NGTB30N60FLWG , NGTB30N60FWG , NGTG30N60FLWG , CT60AM-20 , STGB20V60DF , STGB20V60F , STGFW20V60F , STGP20V60DF , STGP20V60F , STGW20V60DF , STGW20V60F , STGWT20V60DF .

 


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IGBT: IRGC16B60KB | IRGC16B120KB | IRGC15B120UB | IRGC15B120KB | IRGC100B60UB | IRGC100B60KB | IRGC100B120UB | IRGC100B120KB | IGC70T120T6RL | SIGC05T60SNC |