Справочник IGBT. NGTG30N60FWG

 

NGTG30N60FWG Даташит. Аналоги. Параметры и характеристики.


   Наименование: NGTG30N60FWG
   Тип транзистора: IGBT
   Маркировка: G30N60F
   Тип управляющего канала: N
   Pcⓘ - Максимальная рассеиваемая мощность: 167 W
   |Vce|ⓘ - Предельно-допустимое напряжение коллектор-эмиттер: 600 V
   |Vge|ⓘ - Максимально допустимое напряжение эмиттер-затвор: 20 V
   |Ic|ⓘ - Максимальный постоянный ток коллектора: 30 A @25℃
   |VCEsat|ⓘ - Напряжение насыщения коллектор-эмиттер типовое: 1.45 V @25℃
   |VGEth|ⓘ - Максимальное пороговое напряжение затвор-эмиттер: 6.5 V
   Tjⓘ - Максимальная температура перехода: 150 ℃
   trⓘ - Время нарастания типовое: 31 nS
   Coesⓘ - Выходная емкость, типовая: 115 pF
   Qgⓘ - Общий заряд затвора, typ: 170 nC
   Тип корпуса: TO247
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NGTG30N60FWG Datasheet (PDF)

 ..1. Size:169K  onsemi
 ngtg30n60fwg.pdf pdf_icon

NGTG30N60FWG

NGTG30N60FWGIGBTThis Insulated Gate Bipolar Transistor (IGBT) features a robust andcost effective Trench construction, and provides superior performancein demanding switching applications, offering both low on statevoltage and minimal switching loss.http://onsemi.comFeatures Optimized for Very Low VCEsat Low Switching Loss Reduces System Power Dissipation30 A, 600 V

 4.1. Size:173K  onsemi
 ngtg30n60flwg.pdf pdf_icon

NGTG30N60FWG

NGTG30N60FLWGIGBTThis Insulated Gate Bipolar Transistor (IGBT) features a robust andcost effective Trench construction, and provides superior performancein demanding switching applications, offering both low on statevoltage and minimal switching loss.http://onsemi.comFeatures Low Saturation Voltage using Trench with Field Stop Technology Low Switching Loss Reduces System

 9.1. Size:84K  onsemi
 ngtg35n65fl2.pdf pdf_icon

NGTG30N60FWG

NGTG35N65FL2WGIGBT - Field Stop IIThis Insulated Gate Bipolar Transistor (IGBT) features a robust andcost effective Field Stop II Trench construction, and provides superiorperformance in demanding switching applications, offering both lowon state voltage and minimal switching loss. The IGBT is well suitedfor UPS and solar applications.http://onsemi.comFeatures Extremely Eff

 9.2. Size:82K  onsemi
 ngtg35n65fl2wg.pdf pdf_icon

NGTG30N60FWG

NGTG35N65FL2WGIGBT - Field Stop IIThis Insulated Gate Bipolar Transistor (IGBT) features a robust andcost effective Field Stop II Trench construction, and provides superiorperformance in demanding switching applications, offering both lowon state voltage and minimal switching loss. The IGBT is well suitedfor UPS and solar applications.www.onsemi.comFeatures Extremely Effici

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Другие IGBT... NGTB20N120IHS , NGTB20N120IHSWG , AUIRG4PC40S-E , KGF15N120KDA , IRG7PK35UD1 , NGTB30N60FLWG , NGTB30N60FWG , NGTG30N60FLWG , FGL60N100BNTD , STGB20V60DF , STGB20V60F , STGFW20V60F , STGP20V60DF , STGP20V60F , STGW20V60DF , STGW20V60F , STGWT20V60DF .

History: CM2400HC-34H | 2PG006

 

 
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