IKP30N65F5 IGBT. Datasheet pdf. Equivalent
Type Designator: IKP30N65F5
Type: IGBT + Anti-Parallel Diode
Marking Code: K30EF5
Type of IGBT Channel: N
Pcⓘ - Maximum Power Dissipation: 188 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 650 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic|ⓘ - Maximum Collector Current: 55 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.6 V @25℃
|VGEth|ⓘ - Maximum G-E Threshold Voltag: 4.8 V
Tjⓘ - Maximum Junction Temperature: 175 ℃
trⓘ - Rise Time, typ: 9 nS
Coesⓘ - Output Capacitance, typ: 45 pF
Qgⓘ - Total Gate Charge, typ: 65 nC
Package: TO220
IKP30N65F5 Transistor Equivalent Substitute - IGBT Cross-Reference Search
IKP30N65F5 Datasheet (PDF)
ikp30n65f5.pdf
IGBTHigh speed 5 FAST IGBT in TRENCHSTOPTM 5 technology copacked with RAPID 1fast and soft antiparallel diodeIKP30N65F5650V DuoPack IGBT and diodeHigh speed switching series fifth generationData sheetIndustrial Power ControlIKP30N65F5High speed switching series fifth generationHigh speed 5 FAST IGBT in TRENCHSTOPTM 5 technology copacked withRAPID 1 fast and soft antiparal
ikp30n65h5.pdf
IGBTHigh speed 5 IGBT in TRENCHSTOPTM 5 technology copacked with RAPID 1fast and soft antiparallel diodeIKP30N65H5650V DuoPack IGBT and diodeHigh speed switching series fifth generationData sheetIndustrial Power ControlIKP30N65H5High speed switching series fifth generationHigh speed 5 IGBT in TRENCHSTOPTM 5 technology copacked with RAPID 1fast and soft antiparallel diode
Datasheet: AP05G120SW-HF , TSG10N120CN , AP05G120NSW-HF , AP20GT60SW , AP20GT60W , CI15T60 , MMIX4B12N300 , NGD8205A , GT30F126 , IXYP8N90C3D1 , APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W .
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