IKW30N65H5 Datasheet. Specs and Replacement

Type Designator: IKW30N65H5  📄📄 

Type: IGBT

Type of IGBT Channel: N

Absolute Maximum Ratings

Pc ⓘ - Maximum Power Dissipation: 188 W

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 650 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V

|Ic| ⓘ - Maximum Collector Current: 55 A @25℃

Tj ⓘ - Maximum Junction Temperature: 175 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.65 V @25℃

tr ⓘ - Rise Time, typ: 11 nS

Coesⓘ - Output Capacitance, typ: 45 pF

Package: TO247

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IKW30N65H5 datasheet

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IKW30N65H5

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Reverse Conducting Series Reverse conducting IGBT with monolithic body diode IKW30N65WR5 Data sheet Inductrial Power Control IKW30N65WR5 Reverse Conducting Series Reverse conducting IGBT with monolithic body diode C Features Powerful monolithic diode optimized for ZCS applications TRENCHSTOPTM 5 technology applications offers - high ruggedness, temperature stable behavior... See More ⇒

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Specs: IRG7PH35UD1M, IRG8P25N120KD, IGB30N60T, IGW30N60T, IGP30N65F5, IGP30N65H5, IKP30N65F5, IKP30N65H5, BT60T60ANFK, NGTB30N60S, NGTB30N60SWG, NGTB20N120IHL, NGTB25N120IHL, IRGP6630D, NGTB20N120L, NGTB20N120LWG, NGTB25N120L

Keywords - IKW30N65H5 transistor spec

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