IKW30N65H5 Даташит. Аналоги. Параметры и характеристики.
Наименование: IKW30N65H5
Тип транзистора: IGBT
Тип управляющего канала: N
Pcⓘ - Максимальная рассеиваемая мощность: 188 W
|Vce|ⓘ - Предельно-допустимое напряжение коллектор-эмиттер: 650 V
|Vge|ⓘ - Максимально допустимое напряжение эмиттер-затвор: 20 V
|Ic|ⓘ - Максимальный постоянный ток коллектора: 55 A @25℃
|VCEsat|ⓘ - Напряжение насыщения коллектор-эмиттер типовое: 1.65 V @25℃
Tjⓘ - Максимальная температура перехода: 175 ℃
trⓘ - Время нарастания типовое: 11 nS
Coesⓘ - Выходная емкость, типовая: 45 pF
Тип корпуса: TO247
- подбор IGBT транзистора по параметрам
IKW30N65H5 Datasheet (PDF)
ikw30n65h5.pdf

IGBTHigh speed 5 IGBT in TRENCHSTOPTM 5 technology copacked with RAPID 1fast and soft antiparallel diodeIKW30N65H5650V DuoPack IGBT and DiodeHigh speed switching series fifth generationData sheetIndustrial Power ControlIKW30N65H5High speed switching series fifth generationHigh speed 5 IGBT in TRENCHSTOPTM 5 technology copacked with RAPID 1fast and soft antiparallel diode
ikw30n65nl5.pdf

IGBTLow V IGBT in TRENCHSTOPTM 5 technology copacked with RAPID 2CE(sat)fast and soft antiparallel diodeIKW30N65NL5650V DuoPack IGBT and diodeLow V series fifth generationCE(sat)Data sheetIndustrial Power ControlIKW30N65NL5Low V series fifth generationCE(sat)Low V IGBT in TRENCHSTOPTM 5 technology copacked with RAPID 2CE(sat)fast and soft antiparallel diodeCFe
ikw30n65wr5 k30ewr5.pdf

Reverse Conducting SeriesReverse conducting IGBT with monolithic body diodeIKW30N65WR5Data sheetInductrial Power ControlIKW30N65WR5Reverse Conducting SeriesReverse conducting IGBT with monolithic body diodeCFeatures: Powerful monolithic diode optimized for ZCS applications TRENCHSTOPTM 5 technology applications offers:- high ruggedness, temperature stable behavior
ikw30n65wr5.pdf

Reverse Conducting SeriesReverse conducting IGBT with monolithic body diodeIKW30N65WR5Data sheetInductrial Power ControlIKW30N65WR5Reverse Conducting SeriesReverse conducting IGBT with monolithic body diodeCFeatures: Powerful monolithic diode optimized for ZCS applications TRENCHSTOPTM 5 technology applications offers:- high ruggedness, temperature stable behavior
Другие IGBT... AP05G120SW-HF , TSG10N120CN , AP05G120NSW-HF , AP20GT60SW , AP20GT60W , CI15T60 , MMIX4B12N300 , NGD8205A , IHW20N135R5 , IXYP8N90C3D1 , APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W .
History: NCE100ED75VT | IKZ75N65EL5 | SGT70N65FD1P7 | IXBH20N300 | 2MBI50L-060 | FGH50T65UPD | SPT40N120
History: NCE100ED75VT | IKZ75N65EL5 | SGT70N65FD1P7 | IXBH20N300 | 2MBI50L-060 | FGH50T65UPD | SPT40N120



Список транзисторов
Обновления
IGBT: G50T65LBBW | G50T65DS | G40N120D | G25T120D | DHG60T65D | DGF30F65M2 | DGE20F65M2 | DGD06F65M2 | DGC75F65M | DGC75F120M2 | DGC60F65M
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