All IGBT. NGTB20N120LWG Datasheet

 

NGTB20N120LWG Datasheet and Replacement


   Type Designator: NGTB20N120LWG
   Type: IGBT
   Type of IGBT Channel: N
   Pc ⓘ - Maximum Power Dissipation: 192 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic| ⓘ - Maximum Collector Current: 20 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.8 V @25℃
   Tj ⓘ - Maximum Junction Temperature: 150 ℃
   tr ⓘ - Rise Time, typ: 26 nS
   Coesⓘ - Output Capacitance, typ: 155 pF
   Package: TO247
 

 NGTB20N120LWG substitution

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NGTB20N120LWG Datasheet (PDF)

 ..1. Size:176K  onsemi
 ngtb20n120lwg.pdf pdf_icon

NGTB20N120LWG

NGTB20N120LWGIGBTThis Insulated Gate Bipolar Transistor (IGBT) features a robust andcost effective Field Stop (FS) Trench construction, and providessuperior performance in demanding switching applications, offeringboth low on-state voltage and minimal switching loss. The IGBT iswell suited for resonant or soft switching applications. Incorporatedhttp://onsemi.cominto the device

 3.1. Size:176K  onsemi
 ngtb20n120l.pdf pdf_icon

NGTB20N120LWG

NGTB20N120LWGIGBTThis Insulated Gate Bipolar Transistor (IGBT) features a robust andcost effective Field Stop (FS) Trench construction, and providessuperior performance in demanding switching applications, offeringboth low on-state voltage and minimal switching loss. The IGBT iswell suited for resonant or soft switching applications. Incorporatedhttp://onsemi.cominto the device

 4.1. Size:174K  onsemi
 ngtb20n120ihl.pdf pdf_icon

NGTB20N120LWG

NGTB20N120IHLWGIGBTThis Insulated Gate Bipolar Transistor (IGBT) features a robust andcost effective Field Stop (FS) Trench construction, and providessuperior performance in demanding switching applications, offeringboth low on-state voltage and minimal switching loss. The IGBT iswell suited for resonant or soft switching applications. Incorporatedhttp://onsemi.cominto the devic

 4.2. Size:182K  onsemi
 ngtb20n120ihswg.pdf pdf_icon

NGTB20N120LWG

NGTB20N120IHSWGIGBTThis Insulated Gate Bipolar Transistor (IGBT) features a robust andcost effective Field Stop (FS) Trench construction, and providessuperior performance in demanding switching applications, offeringboth low on-state voltage and minimal switching loss. The IGBT iswell suited for resonant or soft switching applications. Incorporatedhttp://onsemi.cominto the devic

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Datasheet: IKP30N65H5 , IKW30N65H5 , NGTB30N60S , NGTB30N60SWG , NGTB20N120IHL , NGTB25N120IHL , IRGP6630D , NGTB20N120L , GT30F124 , NGTB25N120L , NGTB25N120LWG , NGTB30N120IHS , NGTB30N120IHSWG , 25MT060WFAPBF , MMG40H120XB6TN , 6SI75N12 , IRGB4630D .

Keywords - NGTB20N120LWG transistor datasheet

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