All IGBT. NGTB30N120IHS Datasheet

 

NGTB30N120IHS Datasheet and Replacement


   Type Designator: NGTB30N120IHS
   Type: IGBT
   Type of IGBT Channel: N
   Pc ⓘ - Maximum Power Dissipation: 192 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic| ⓘ - Maximum Collector Current: 30 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2 V @25℃
   Tj ⓘ - Maximum Junction Temperature: 150 ℃
   Coesⓘ - Output Capacitance, typ: 125 pF
   Package: TO247
 

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NGTB30N120IHS Datasheet (PDF)

 ..1. Size:172K  onsemi
 ngtb30n120ihs.pdf pdf_icon

NGTB30N120IHS

NGTB30N120IHSWGIGBTThis Insulated Gate Bipolar Transistor (IGBT) features a robust andcost effective Field Stop (FS) Trench construction, and providessuperior performance in demanding switching applications, offeringboth low on-state voltage and minimal switching loss. The IGBT iswell suited for resonant or soft switching applications. Incorporatedhttp://onsemi.cominto the devic

 0.1. Size:172K  onsemi
 ngtb30n120ihswg.pdf pdf_icon

NGTB30N120IHS

NGTB30N120IHSWGIGBTThis Insulated Gate Bipolar Transistor (IGBT) features a robust andcost effective Field Stop (FS) Trench construction, and providessuperior performance in demanding switching applications, offeringboth low on-state voltage and minimal switching loss. The IGBT iswell suited for resonant or soft switching applications. Incorporatedhttp://onsemi.cominto the devic

 2.1. Size:180K  onsemi
 ngtb30n120ihr.pdf pdf_icon

NGTB30N120IHS

NGTB30N120IHRWGIGBT with Monolithic FreeWheeling DiodeThis Insulated Gate Bipolar Transistor (IGBT) features a robust andcost effective Field Stop (FS) Trench construction, and providessuperior performance in demanding switching applications, offeringboth low on-state voltage and minimal switching loss. The IGBT ishttp://onsemi.comwell suited for resonant or soft switching appli

 2.2. Size:180K  onsemi
 ngtb30n120ihrwg.pdf pdf_icon

NGTB30N120IHS

NGTB30N120IHRWGIGBT with Monolithic FreeWheeling DiodeThis Insulated Gate Bipolar Transistor (IGBT) features a robust andcost effective Field Stop (FS) Trench construction, and providessuperior performance in demanding switching applications, offeringboth low on-state voltage and minimal switching loss. The IGBT ishttp://onsemi.comwell suited for resonant or soft switching appli

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Datasheet: APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W , IRG4MC50U , IKW30N60H3 , AOB10B60D , AOK10B60D , AOT10B60D , NGB8207AB , NGB8207B , AOB15B60D , IRGSL8B60K , AOK15B60D .

History: SG12N06DP | IXGX50N60C2D1 | IXDR30N120D1 | VS-GB75LP120N | MBN600GR12A | NGTB20N120IHRWG | IHW25N120E1

Keywords - NGTB30N120IHS transistor datasheet

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