All IGBT. NGTB30N120IHS Datasheet

 

NGTB30N120IHS Datasheet and Replacement


   Type Designator: NGTB30N120IHS
   Type: IGBT
   Type of IGBT Channel: N
   Pc ⓘ - Maximum Power Dissipation: 192 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic| ⓘ - Maximum Collector Current: 30 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2 V @25℃
   Tj ⓘ - Maximum Junction Temperature: 150 ℃
   Coesⓘ - Output Capacitance, typ: 125 pF
   Package: TO247
 

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NGTB30N120IHS Datasheet (PDF)

 ..1. Size:172K  onsemi
 ngtb30n120ihs.pdf pdf_icon

NGTB30N120IHS

NGTB30N120IHSWGIGBTThis Insulated Gate Bipolar Transistor (IGBT) features a robust andcost effective Field Stop (FS) Trench construction, and providessuperior performance in demanding switching applications, offeringboth low on-state voltage and minimal switching loss. The IGBT iswell suited for resonant or soft switching applications. Incorporatedhttp://onsemi.cominto the devic

 0.1. Size:172K  onsemi
 ngtb30n120ihswg.pdf pdf_icon

NGTB30N120IHS

NGTB30N120IHSWGIGBTThis Insulated Gate Bipolar Transistor (IGBT) features a robust andcost effective Field Stop (FS) Trench construction, and providessuperior performance in demanding switching applications, offeringboth low on-state voltage and minimal switching loss. The IGBT iswell suited for resonant or soft switching applications. Incorporatedhttp://onsemi.cominto the devic

 2.1. Size:180K  onsemi
 ngtb30n120ihr.pdf pdf_icon

NGTB30N120IHS

NGTB30N120IHRWGIGBT with Monolithic FreeWheeling DiodeThis Insulated Gate Bipolar Transistor (IGBT) features a robust andcost effective Field Stop (FS) Trench construction, and providessuperior performance in demanding switching applications, offeringboth low on-state voltage and minimal switching loss. The IGBT ishttp://onsemi.comwell suited for resonant or soft switching appli

 2.2. Size:180K  onsemi
 ngtb30n120ihrwg.pdf pdf_icon

NGTB30N120IHS

NGTB30N120IHRWGIGBT with Monolithic FreeWheeling DiodeThis Insulated Gate Bipolar Transistor (IGBT) features a robust andcost effective Field Stop (FS) Trench construction, and providessuperior performance in demanding switching applications, offeringboth low on-state voltage and minimal switching loss. The IGBT ishttp://onsemi.comwell suited for resonant or soft switching appli

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Datasheet: NGTB30N60SWG , NGTB20N120IHL , NGTB25N120IHL , IRGP6630D , NGTB20N120L , NGTB20N120LWG , NGTB25N120L , NGTB25N120LWG , GT30J124 , NGTB30N120IHSWG , 25MT060WFAPBF , MMG40H120XB6TN , 6SI75N12 , IRGB4630D , IRGP4630D , IRGS4630D , CI40T120P .

History: IXYH100N65C3 | IRGP4068DPBF | IXGT31N60D1 | IXSH16N60U1 | VS-GB75LP120N | JNG75T65HXU1 | T2250AB25E

Keywords - NGTB30N120IHS transistor datasheet

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