Справочник IGBT. NGTB30N120IHS

 

NGTB30N120IHS Даташит. Аналоги. Параметры и характеристики.


   Наименование: NGTB30N120IHS
   Тип транзистора: IGBT
   Тип управляющего канала: N
   Pcⓘ - Максимальная рассеиваемая мощность: 192 W
   |Vce|ⓘ - Предельно-допустимое напряжение коллектор-эмиттер: 1200 V
   |Vge|ⓘ - Максимально допустимое напряжение эмиттер-затвор: 20 V
   |Ic|ⓘ - Максимальный постоянный ток коллектора: 30 A @25℃
   |VCEsat|ⓘ - Напряжение насыщения коллектор-эмиттер типовое: 2 V @25℃
   Tjⓘ - Максимальная температура перехода: 150 ℃
   Coesⓘ - Выходная емкость, типовая: 125 pF
   Тип корпуса: TO247
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NGTB30N120IHS Datasheet (PDF)

 ..1. Size:172K  onsemi
 ngtb30n120ihs.pdf pdf_icon

NGTB30N120IHS

NGTB30N120IHSWGIGBTThis Insulated Gate Bipolar Transistor (IGBT) features a robust andcost effective Field Stop (FS) Trench construction, and providessuperior performance in demanding switching applications, offeringboth low on-state voltage and minimal switching loss. The IGBT iswell suited for resonant or soft switching applications. Incorporatedhttp://onsemi.cominto the devic

 0.1. Size:172K  onsemi
 ngtb30n120ihswg.pdf pdf_icon

NGTB30N120IHS

NGTB30N120IHSWGIGBTThis Insulated Gate Bipolar Transistor (IGBT) features a robust andcost effective Field Stop (FS) Trench construction, and providessuperior performance in demanding switching applications, offeringboth low on-state voltage and minimal switching loss. The IGBT iswell suited for resonant or soft switching applications. Incorporatedhttp://onsemi.cominto the devic

 2.1. Size:180K  onsemi
 ngtb30n120ihr.pdf pdf_icon

NGTB30N120IHS

NGTB30N120IHRWGIGBT with Monolithic FreeWheeling DiodeThis Insulated Gate Bipolar Transistor (IGBT) features a robust andcost effective Field Stop (FS) Trench construction, and providessuperior performance in demanding switching applications, offeringboth low on-state voltage and minimal switching loss. The IGBT ishttp://onsemi.comwell suited for resonant or soft switching appli

 2.2. Size:180K  onsemi
 ngtb30n120ihrwg.pdf pdf_icon

NGTB30N120IHS

NGTB30N120IHRWGIGBT with Monolithic FreeWheeling DiodeThis Insulated Gate Bipolar Transistor (IGBT) features a robust andcost effective Field Stop (FS) Trench construction, and providessuperior performance in demanding switching applications, offeringboth low on-state voltage and minimal switching loss. The IGBT ishttp://onsemi.comwell suited for resonant or soft switching appli

ПОКАЗАТЬ ЕЩЁ

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History: STGW80V60DF | MMG200DR120B | IXGT30N60C3D1 | STGB19NC60HDT4 | DAZF150G120XCA | SKM300GAR123D | DL2G50SH6N

 

 
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