All IGBT. HGTD6N40E1S Datasheet

 

HGTD6N40E1S Datasheet and Replacement


   Type Designator: HGTD6N40E1S
   Type: IGBT
   Marking Code: G6N40E
   Type of IGBT Channel: N
   Pc ⓘ - Maximum Power Dissipation: 60 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 400 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic| ⓘ - Maximum Collector Current: 7.5 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.5(max) V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 4.5 V
   Tj ⓘ - Maximum Junction Temperature: 150 ℃
   tr ⓘ - Rise Time, typ: 32 nS
   Qg ⓘ - Total Gate Charge, typ: 6.9 nC
   Package: TO252
 

 HGTD6N40E1S substitution

   - IGBT ⓘ Cross-Reference Search

 

HGTD6N40E1S Datasheet (PDF)

 ..1. Size:32K  1
 hgtd6n40e1 hgtd6n40e1s hgtd6n50e1 hgtd6n50e1s.pdf pdf_icon

HGTD6N40E1S

HGTD6N40E1, HGTD6N40E1S,HGTD6N50E1, HGTD6N50E1S6A, 400V and 500V N-Channel IGBTsMarch 1997Features PackagesHGTD6N40E1, HGTD6N50E1 6A, 400V and 500VJEDEC TO-251AA VCE(ON): 2.5V Max.EMITTERCOLLECTOR TFALL: 1.0sGATE Low On-State Voltage Fast Switching SpeedsCOLLECTOR(FLANGE) High Input ImpedanceHGTD6N40E1S, HGTD6N50E1SApplicationsJEDEC TO

Datasheet: HGTD2N120CNS , HGTD3N60A4S , HGTD3N60B3 , HGTD3N60B3S , HGTD3N60C3 , HGTD3N60C3S , HGT5A27N120BN , HGTD6N40E1 , GT30F131 , HGTD6N50E1 , HGTD6N50E1S , HGTD7N60A4S , HGTD7N60B3 , HGTD7N60B3S , HGTD7N60C3 , HGTD7N60C3S , HGT1S2N120CNS .

History: GT40J325

Keywords - HGTD6N40E1S transistor datasheet

 HGTD6N40E1S cross reference
 HGTD6N40E1S equivalent finder
 HGTD6N40E1S lookup
 HGTD6N40E1S substitution
 HGTD6N40E1S replacement

 

 
Back to Top

 


 
.