All IGBT. CI40T120P Datasheet

 

CI40T120P IGBT. Datasheet pdf. Equivalent


   Type Designator: CI40T120P
   Type: IGBT + Anti-Parallel Diode
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 208 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic|ⓘ - Maximum Collector Current: 60 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.1 V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 6.5 V
   Tjⓘ - Maximum Junction Temperature: 150 ℃
   trⓘ - Rise Time, typ: 84 nS
   Qgⓘ - Total Gate Charge, typ: TBD nC
   Package: TO3P

 CI40T120P Transistor Equivalent Substitute - IGBT Cross-Reference Search

 

CI40T120P Datasheet (PDF)

 ..1. Size:423K  citcorp
 ci40t120p.pdf

CI40T120P CI40T120P

CI40T120P40A1200V Field Stop Trench IGBT Features Outline Positive temperature Co-efficient for easy parallel operation. TO-3P High current capability. High input impedance.0.543(13.8)0.197(5.00)0.528(13.4) Suffix "G" indicates Halogen-free part, ex.CI40T120PG. 0.181(4.60)0.065(1.65)0.386(9.8)0.057(1.45)0.370(9.4)0.157(4.0)0.142(3.6)0.622(15.8)

Datasheet: NGTB30N120IHS , NGTB30N120IHSWG , 25MT060WFAPBF , MMG40H120XB6TN , 6SI75N12 , IRGB4630D , IRGP4630D , IRGS4630D , SGT50T65FD1PT , KGF25N120KDA , AP40G120W , F4-25R12NS4 , IRG7PG35U , STGB20H60DF , STGP20H60DF , STGW20H60DF , STGWT20H60DF .

 

 
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