All IGBT. CI40T120P Datasheet

 

CI40T120P Datasheet and Replacement


   Type Designator: CI40T120P
   Type: IGBT
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 208 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic|ⓘ - Maximum Collector Current: 60 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.1 V @25℃
   Tjⓘ - Maximum Junction Temperature: 150 ℃
   trⓘ - Rise Time, typ: 84 nS
   Package: TO3P
      - IGBT Cross-Reference

 

CI40T120P Datasheet (PDF)

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CI40T120P

CI40T120P40A1200V Field Stop Trench IGBT Features Outline Positive temperature Co-efficient for easy parallel operation. TO-3P High current capability. High input impedance.0.543(13.8)0.197(5.00)0.528(13.4) Suffix "G" indicates Halogen-free part, ex.CI40T120PG. 0.181(4.60)0.065(1.65)0.386(9.8)0.057(1.45)0.370(9.4)0.157(4.0)0.142(3.6)0.622(15.8)

Datasheet: APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W , IRG4MC50U , GT30F131 , AOB10B60D , AOK10B60D , AOT10B60D , NGB8207AB , NGB8207B , AOB15B60D , IRGSL8B60K , AOK15B60D .

History: MIXA81WB1200TEH | DM2G100SH6N | 2MBI225VN-120-50 | 2MBI900VXA-120P-50 | BT15T60A8F | IRG4BC20KD | IQGB300N120I4

Keywords - CI40T120P transistor datasheet

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