KGF25N120KDA Specs and Replacement
Type Designator: KGF25N120KDA
Type: IGBT
Type of IGBT Channel: N
Absolute Maximum Ratings
Pc ⓘ - Maximum Power Dissipation: 227 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic| ⓘ - Maximum Collector Current: 50 A @25℃
Tj ⓘ - Maximum Junction Temperature: 150 ℃
Electrical Characteristics
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2 V @25℃
tr ⓘ - Rise Time, typ: 25 nS
Coesⓘ - Output Capacitance, typ: 115 pF
Package: TO247
KGF25N120KDA Substitution - IGBT ⓘ Cross-Reference Search
KGF25N120KDA datasheet
kgf25n120kda.pdf
SEMICONDUCTOR KGF25N120KDA TECHNICAL DATA General Description KEC Field Stop Trench IGBTs offer low switching losses, high energy efficiency and short circuit ruggedness. It is designed for applications such as motor control, uninterrupted power supplies(UPS), general inverters. FEATURES High speed switching High ruggedness, temperature stable behavior Short Circuit Withstand ... See More ⇒
Specs: NGTB30N120IHSWG , 25MT060WFAPBF , MMG40H120XB6TN , 6SI75N12 , IRGB4630D , IRGP4630D , IRGS4630D , CI40T120P , RJP30H2A , AP40G120W , F4-25R12NS4 , IRG7PG35U , STGB20H60DF , STGP20H60DF , STGW20H60DF , STGWT20H60DF , AUIRGP66524D0 .
Keywords - KGF25N120KDA transistor spec
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IGBT: JJT40N120SE | JJT40N120HE | JJT30N65UE
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