AP40G120W Specs and Replacement
Type Designator: AP40G120W
Type: IGBT
Type of IGBT Channel: N
Absolute Maximum Ratings
Pc ⓘ - Maximum Power Dissipation: 208 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic| ⓘ - Maximum Collector Current: 80 A @25℃
Tj ⓘ - Maximum Junction Temperature: 150 ℃
Electrical Characteristics
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 3.4 V @25℃
tr ⓘ - Rise Time, typ: 30 nS
Coesⓘ - Output Capacitance, typ: 205 pF
Package: TO247
AP40G120W Substitution - IGBT ⓘ Cross-Reference Search
AP40G120W datasheet
ap40g120w.pdf
AP40G120W RoHS-compliant Product Advanced Power N-CHANNEL INSULATED GATE Electronics Corp. BIPOLAR TRANSISTOR Features C VCES 1200V Advanced IGBT Technology IC 40A Low Saturation Voltage VCE(sat)=3.15V@IC=40A C G Industry Standard TO-3P Package G TO-3P C E E Absolute Maximum Ratings Symbol Parameter Rating Units VCES Collector-Emitter Voltage 1200 V VGE Gate-E... See More ⇒
ap40g03nf.pdf
AP40G03NF 30V N+P-Channel Enhancement Mode MOSFET Description The AP40G03NF uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 30V I =42A DS D R ... See More ⇒
Specs: 25MT060WFAPBF , MMG40H120XB6TN , 6SI75N12 , IRGB4630D , IRGP4630D , IRGS4630D , CI40T120P , KGF25N120KDA , SGT50T65FD1PT , F4-25R12NS4 , IRG7PG35U , STGB20H60DF , STGP20H60DF , STGW20H60DF , STGWT20H60DF , AUIRGP66524D0 , IRG7PH37K10D .
Keywords - AP40G120W transistor spec
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IGBT: JJT40N120SE | JJT40N120HE | JJT30N65UE
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