All IGBT. AP40G120W Datasheet

 

AP40G120W Datasheet and Replacement


   Type Designator: AP40G120W
   Type: IGBT
   Type of IGBT Channel: N
   Pc ⓘ - Maximum Power Dissipation: 208 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic| ⓘ - Maximum Collector Current: 80 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 3.4 V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 7 V
   Tj ⓘ - Maximum Junction Temperature: 150 ℃
   tr ⓘ - Rise Time, typ: 30 nS
   Coesⓘ - Output Capacitance, typ: 205 pF
   Qg ⓘ - Total Gate Charge, typ: 160 nC
   Package: TO247
 

 AP40G120W substitution

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AP40G120W Datasheet (PDF)

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AP40G120W

AP40G120WRoHS-compliant ProductAdvanced Power N-CHANNEL INSULATED GATEElectronics Corp. BIPOLAR TRANSISTORFeaturesCVCES 1200V Advanced IGBT Technology IC 40A Low Saturation VoltageVCE(sat)=3.15V@IC=40ACG Industry Standard TO-3P PackageGTO-3PCEEAbsolute Maximum RatingsSymbol Parameter Rating UnitsVCESCollector-Emitter Voltage 1200 VVGEGate-E

Datasheet: APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W , IRG4MC50U , IKW30N60H3 , AOB10B60D , AOK10B60D , AOT10B60D , NGB8207AB , NGB8207B , AOB15B60D , IRGSL8B60K , AOK15B60D .

History: F3L150R12W2H3-B11 | APTGS75X170E3 | IRGP4062D-EPBF

Keywords - AP40G120W transistor datasheet

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