All IGBT. AP40G120W Datasheet

 

AP40G120W Datasheet and Replacement


   Type Designator: AP40G120W
   Type: IGBT
   Type of IGBT Channel: N
   Pc ⓘ - Maximum Power Dissipation: 208 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic| ⓘ - Maximum Collector Current: 80 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 3.4 V @25℃
   Tj ⓘ - Maximum Junction Temperature: 150 ℃
   tr ⓘ - Rise Time, typ: 30 nS
   Coesⓘ - Output Capacitance, typ: 205 pF
   Package: TO247
 

 AP40G120W substitution

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AP40G120W Datasheet (PDF)

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AP40G120W

AP40G120WRoHS-compliant ProductAdvanced Power N-CHANNEL INSULATED GATEElectronics Corp. BIPOLAR TRANSISTORFeaturesCVCES 1200V Advanced IGBT Technology IC 40A Low Saturation VoltageVCE(sat)=3.15V@IC=40ACG Industry Standard TO-3P PackageGTO-3PCEEAbsolute Maximum RatingsSymbol Parameter Rating UnitsVCESCollector-Emitter Voltage 1200 VVGEGate-E

Datasheet: 25MT060WFAPBF , MMG40H120XB6TN , 6SI75N12 , IRGB4630D , IRGP4630D , IRGS4630D , CI40T120P , KGF25N120KDA , SGT50T65FD1PT , F4-25R12NS4 , IRG7PG35U , STGB20H60DF , STGP20H60DF , STGW20H60DF , STGWT20H60DF , AUIRGP66524D0 , IRG7PH37K10D .

History: F12-35R12KT4G | STGP20H60DF | CM150DY-12NF | CM200DY-28H | IRG4IBC30UD | TT060U065FB | CM200DY-12NF

Keywords - AP40G120W transistor datasheet

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