NGTB45N60SWG PDF and Equivalents Search

 

NGTB45N60SWG Specs and Replacement

Type Designator: NGTB45N60SWG

Type: IGBT

Type of IGBT Channel: N

Absolute Maximum Ratings

Pc ⓘ - Maximum Power Dissipation: 250 W

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V

|Ic| ⓘ - Maximum Collector Current: 45 A @25℃

Tj ⓘ - Maximum Junction Temperature: 150 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.2 V @25℃

tr ⓘ - Rise Time, typ: 34 nS

Coesⓘ - Output Capacitance, typ: 120 pF

Package: TO247

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NGTB45N60SWG datasheet

 ..1. Size:203K  onsemi
 ngtb45n60swg.pdf pdf_icon

NGTB45N60SWG

NGTB45N60SWG IGBT This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop (FS) Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss. The IGBT is well suited for half bridge resonant applications. Incorporated into the device is a soft and fast co-pack... See More ⇒

 4.1. Size:80K  onsemi
 ngtb45n60s1wg.pdf pdf_icon

NGTB45N60SWG

NGTB45N60S1WG IGBT - Inverter Welding This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss. The IGBT is well suited for welding applications. Incorporated into the device is a soft and fast www.onsemi.com ... See More ⇒

 4.2. Size:83K  onsemi
 ngtb45n60s2wg.pdf pdf_icon

NGTB45N60SWG

NGTB45N60S2WG IGBT - Inverter Welding This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss. The IGBT is well suited for welding applications. Incorporated into the device is a soft and fast www.onsemi.com ... See More ⇒

 4.3. Size:139K  onsemi
 ngtb45n60s.pdf pdf_icon

NGTB45N60SWG

NGTB45N60SWG IGBT This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop (FS) Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss. The IGBT is well suited for half bridge resonant applications. Incorporated into the device is a soft and fast co-pack... See More ⇒

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Specs: IRGS4640D , IRGSL4640D , MM25G120B , MMG40A120B7HN , MMG75HB060H6EN , NGTB30N60IHLWG , NGTB40N60IHLWG , NGTB45N60S , TGPF30N43P , NGTB50N60S , NGTB50N60SWG , IGW40N65H5 , IGP40N65F5 , IGP40N65H5 , IGW40N65F5 , IKP40N65F5 , IKW40N65F5 .

History: STGB19NC60KD | STGWT40H60DLFB | XP025PJE120AT1B2 | VS-ETF075Y60U

Keywords - NGTB45N60SWG transistor spec

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