NGTB45N60SWG IGBT. Datasheet pdf. Equivalent

   Type Designator: NGTB45N60SWG
   Type: IGBT
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 250 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic|ⓘ - Maximum Collector Current: 45 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.2 V @25℃
   Tjⓘ - Maximum Junction Temperature: 150 ℃
   trⓘ - Rise Time, typ: 34 nS
   Coesⓘ - Output Capacitance, typ: 120 pF
   Package: TO247

NGTB45N60SWG Transistor Equivalent Substitute - IGBT Cross-Reference Search

NGTB45N60SWG Datasheet (PDF)

..1. Size:203K onsemi
ngtb45n60swg.pdf

NGTB45N60SWGIGBTThis Insulated Gate Bipolar Transistor (IGBT) features a robust andcost effective Field Stop (FS) Trench construction, and providessuperior performance in demanding switching applications, offeringboth low on state voltage and minimal switching loss. The IGBT iswell suited for half bridge resonant applications. Incorporated into thedevice is a soft and fast co-pack

4.1. Size:80K onsemi
ngtb45n60s1wg.pdf

NGTB45N60S1WGIGBT - Inverter WeldingThis Insulated Gate Bipolar Transistor (IGBT) features a robust andcost effective Trench construction, and provides superior performancein demanding switching applications, offering both low on statevoltage and minimal switching loss. The IGBT is well suited forwelding applications. Incorporated into the device is a soft and fastwww.onsemi.com

4.2. Size:83K onsemi
ngtb45n60s2wg.pdf

NGTB45N60S2WGIGBT - Inverter WeldingThis Insulated Gate Bipolar Transistor (IGBT) features a robust andcost effective Trench construction, and provides superior performancein demanding switching applications, offering both low on statevoltage and minimal switching loss. The IGBT is well suited forwelding applications. Incorporated into the device is a soft and fastwww.onsemi.com

4.3. Size:139K onsemi
ngtb45n60s.pdf