Справочник IGBT. NGTB45N60SWG

 

NGTB45N60SWG Даташит. Аналоги. Параметры и характеристики.


   Наименование: NGTB45N60SWG
   Тип транзистора: IGBT + Diode
   Маркировка: 45N60S
   Тип управляющего канала: N
   Pc ⓘ - Максимальная рассеиваемая мощность: 250 W
   |Vce|ⓘ - Предельно-допустимое напряжение коллектор-эмиттер: 600 V
   |Vge|ⓘ - Максимально допустимое напряжение эмиттер-затвор: 20 V
   |Ic| ⓘ - Максимальный постоянный ток коллектора: 45 A @25℃
   |VCEsat|ⓘ - Напряжение насыщения коллектор-эмиттер типовое: 2.2 V @25℃
   |VGEth|ⓘ - Максимальное пороговое напряжение затвор-эмиттер: 6.5 V
   Tj ⓘ - Максимальная температура перехода: 150 ℃
   tr ⓘ - Время нарастания типовое: 34 nS
   Coesⓘ - Выходная емкость, типовая: 120 pF
   Qg ⓘ - Общий заряд затвора, typ: 134 nC
   Тип корпуса: TO247
 

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NGTB45N60SWG Datasheet (PDF)

 ..1. Size:203K  onsemi
 ngtb45n60swg.pdf pdf_icon

NGTB45N60SWG

NGTB45N60SWGIGBTThis Insulated Gate Bipolar Transistor (IGBT) features a robust andcost effective Field Stop (FS) Trench construction, and providessuperior performance in demanding switching applications, offeringboth low on state voltage and minimal switching loss. The IGBT iswell suited for half bridge resonant applications. Incorporated into thedevice is a soft and fast co-pack

 4.1. Size:80K  onsemi
 ngtb45n60s1wg.pdf pdf_icon

NGTB45N60SWG

NGTB45N60S1WGIGBT - Inverter WeldingThis Insulated Gate Bipolar Transistor (IGBT) features a robust andcost effective Trench construction, and provides superior performancein demanding switching applications, offering both low on statevoltage and minimal switching loss. The IGBT is well suited forwelding applications. Incorporated into the device is a soft and fastwww.onsemi.com

 4.2. Size:83K  onsemi
 ngtb45n60s2wg.pdf pdf_icon

NGTB45N60SWG

NGTB45N60S2WGIGBT - Inverter WeldingThis Insulated Gate Bipolar Transistor (IGBT) features a robust andcost effective Trench construction, and provides superior performancein demanding switching applications, offering both low on statevoltage and minimal switching loss. The IGBT is well suited forwelding applications. Incorporated into the device is a soft and fastwww.onsemi.com

 4.3. Size:139K  onsemi
 ngtb45n60s.pdf pdf_icon

NGTB45N60SWG

NGTB45N60SWGIGBTThis Insulated Gate Bipolar Transistor (IGBT) features a robust andcost effective Field Stop (FS) Trench construction, and providessuperior performance in demanding switching applications, offeringboth low on state voltage and minimal switching loss. The IGBT iswell suited for half bridge resonant applications. Incorporated into thedevice is a soft and fast co-pack

ПОКАЗАТЬ ЕЩЁ

Другие IGBT... IRGS4640D , IRGSL4640D , MM25G120B , MMG40A120B7HN , MMG75HB060H6EN , NGTB30N60IHLWG , NGTB40N60IHLWG , NGTB45N60S , IHW40T60 , NGTB50N60S , NGTB50N60SWG , IGW40N65H5 , IGP40N65F5 , IGP40N65H5 , IGW40N65F5 , IKP40N65F5 , IKW40N65F5 .

History: OST160N65H5MF

 

 
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