All IGBT. STGWT30V60F Datasheet

 

STGWT30V60F Datasheet and Replacement


   Type Designator: STGWT30V60F
   Type: IGBT
   Marking Code: GWT30V60F
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 260 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic|ⓘ - Maximum Collector Current: 30 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.15 V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 7 V
   Tjⓘ - Maximum Junction Temperature: 175 ℃
   trⓘ - Rise Time, typ: 16 nS
   Coesⓘ - Output Capacitance, typ: 120 pF
   Qgⓘ - Total Gate Charge, typ: 163 nC
   Package: TO3P
      - IGBT Cross-Reference

 

STGWT30V60F Datasheet (PDF)

 ..1. Size:1472K  st
stgwt30v60f.pdf pdf_icon

STGWT30V60F

STGFW30V60F, STGW30V60F, STGWT30V60FTrench gate field-stop IGBT, V series 600 V, 30 A very high speedDatasheet - production dataFeatures Maximum junction temperature: TJ = 175 C111 Tail-less switching off3 VCE(sat) = 1.85 V (typ.) @ IC = 30 A21TO-3PF Tight parameters distributionTab Safe paralleling Low thermal resistance3 322App

 4.1. Size:1911K  st
stgb30v60df stgp30v60df stgw30v60df stgwt30v60df.pdf pdf_icon

STGWT30V60F

STGB30V60DF, STGP30V60DF, STGW30V60DF, STGWT30V60DFTrench gate field-stop IGBT, V series 600 V, 30 A very high speedDatasheet - production dataTABFeaturesTAB Maximum junction temperature: TJ = 175 C Tail-less switching off3 321 VCE(sat) = 1.85 V (typ.) @ IC = 30 A1DPAK TO-220 Tight parameters distributionTAB Safe paralleling Low therma

 4.2. Size:1905K  st
stgwt30v60df.pdf pdf_icon

STGWT30V60F

STGB30V60DF, STGP30V60DF, STGW30V60DF, STGWT30V60DFTrench gate field-stop IGBT, V series 600 V, 30 A very high speedDatasheet - production dataTABFeaturesTAB Maximum junction temperature: TJ = 175 C Tail-less switching off3 321 VCE(sat) = 1.85 V (typ.) @ IC = 30 A1DPAK TO-220 Tight parameters distributionTAB Safe paralleling Low therma

 7.1. Size:1635K  st
stgwt30h65fb.pdf pdf_icon

STGWT30V60F

STGFW30H65FB, STGW30H65FB, STGWT30H65FBTrench gate field-stop IGBT, HB series 650 V, 30 A high speedDatasheet - production dataTABFeatures Maximum junction temperature: TJ = 175 C High speed switching series3 Minimized tail current21 VCE(sat) = 1.55 V (typ.) @ IC = 30 ATO-3PF Tight parameters distribution111 Safe paralleling3 Low t

Datasheet: STGW30V60DF , STGW30V60F , STGWA15H120DF2 , STGWA15H120F2 , STGWT20H65FB , STGWT30H60DFB , STGWT30H65FB , STGWT30V60DF , SGT40N60NPFDPN , RJP60F5DPK , IRGP4650D , IGW50N65F5A , IGW50N65H5A , IKW50N65F5A , IKW50N65H5A , MM30G120B , IRGP4750D .

History: STGWA50M65DF2 | IGC114T170S8RH | DIM2400ESM17-A | IGW100N60H3 | DIM1000ECM33-TS | IGW30N60TP | IGC10T65QE

Keywords - STGWT30V60F transistor datasheet

 STGWT30V60F cross reference
 STGWT30V60F equivalent finder
 STGWT30V60F lookup
 STGWT30V60F substitution
 STGWT30V60F replacement

 

 
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