All IGBT. HGTD8P50G1S9A Datasheet

 

HGTD8P50G1S9A IGBT. Datasheet pdf. Equivalent


   Type Designator: HGTD8P50G1S9A
   Type: IGBT
   Marking Code: G8P50G
   Type of IGBT Channel: P
   Pcⓘ - Maximum Power Dissipation: 66 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 500 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic|ⓘ - Maximum Collector Current: 12 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.5 V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 7.5 V
   Tjⓘ - Maximum Junction Temperature: 150 ℃
   trⓘ - Rise Time, typ: 85 nS
   Qgⓘ - Total Gate Charge, typ: 16 nC
   Package: TO252

 HGTD8P50G1S9A Transistor Equivalent Substitute - IGBT Cross-Reference Search

 

HGTD8P50G1S9A Datasheet (PDF)

 6.1. Size:152K  harris semi
 hgtd8p50.pdf

HGTD8P50G1S9A HGTD8P50G1S9A

HGTD8P50G1,S E M I C O N D U C T O RHGTD8P50G1S8A, 500V P-Channel IGBTsMay 1996Features PackageJEDEC TO-251AA 8A, 500VEMITTER 3.7V VCE(SAT)COLLECTORGATE Typical Fall Time - 1800ns High Input Impedance(FLANGE) TJ = +150oCCOLLECTORDescriptionJEDEC TO-252AAThe HGTD8P50G1 and the HGTD8P50G1S are P-channelenhancement-mode insulated gate bipolar

Datasheet: HGTD7N60A4S , HGTD7N60B3 , HGTD7N60B3S , HGTD7N60C3 , HGTD7N60C3S , HGT1S2N120CNS , HGTD8P50G1 , HGTD8P50G1S , IKW50N60H3 , HGTG10N120BN , HGTG10N120BND , HGTG11N120CN , HGTG11N120CND , HGTG12N60A4 , HGTG12N60A4D , HGTG12N60B3D , HGTG12N60C3D .

 

 
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