HGTD8P50G1S9A Datasheet. Specs and Replacement

Type Designator: HGTD8P50G1S9A  📄📄 

Type: IGBT

Type of IGBT Channel: P

Absolute Maximum Ratings

Pc ⓘ - Maximum Power Dissipation: 66 W

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 500 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V

|Ic| ⓘ - Maximum Collector Current: 12 A @25℃

Tj ⓘ - Maximum Junction Temperature: 150 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.5 V @25℃

tr ⓘ - Rise Time, typ: 85 nS

Package: TO252

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HGTD8P50G1S9A datasheet

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HGTD8P50G1S9A

HGTD8P50G1, S E M I C O N D U C T O R HGTD8P50G1S 8A, 500V P-Channel IGBTs May 1996 Features Package JEDEC TO-251AA 8A, 500V EMITTER 3.7V VCE(SAT) COLLECTOR GATE Typical Fall Time - 1800ns High Input Impedance (FLANGE) TJ = +150oC COLLECTOR Description JEDEC TO-252AA The HGTD8P50G1 and the HGTD8P50G1S are P-channel enhancement-mode insulated gate bipolar ... See More ⇒

Specs: HGTD7N60A4S, HGTD7N60B3, HGTD7N60B3S, HGTD7N60C3, HGTD7N60C3S, HGT1S2N120CNS, HGTD8P50G1, HGTD8P50G1S, GT45F122, HGTG10N120BN, HGTG10N120BND, HGTG11N120CN, HGTG11N120CND, HGTG12N60A4, HGTG12N60A4D, HGTG12N60B3D, HGTG12N60C3D

Keywords - HGTD8P50G1S9A transistor spec

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