All IGBT. STGW40H65FB Datasheet

 

STGW40H65FB Datasheet and Replacement


   Type Designator: STGW40H65FB
   Type: IGBT
   Marking Code: GW40H65FB
   Type of IGBT Channel: N
   Pc ⓘ - Maximum Power Dissipation: 283 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 650 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic| ⓘ - Maximum Collector Current: 40 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.8 V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 7 V
   Tj ⓘ - Maximum Junction Temperature: 175 ℃
   tr ⓘ - Rise Time, typ: 13 nS
   Coesⓘ - Output Capacitance, typ: 198 pF
   Qg ⓘ - Total Gate Charge, typ: 210 nC
   Package: TO247
 

 STGW40H65FB substitution

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STGW40H65FB Datasheet (PDF)

 ..1. Size:431K  st
stgfw40h65fb stgw40h65fb stgwa40h65fb.pdf pdf_icon

STGW40H65FB

STGFW40H65FB, STGW40H65FB, STGWA40H65FBDatasheetTrench gate field-stop 650 V, 40 A high speed HB series IGBTFeatures Maximum junction temperature: TJ = 175 C323 12 High speed switching series1TO-3PF TO-247 Minimized tail current Very low saturation voltage: VCE(sat) = 1.6 V (typ) @ IC = 40 A Safe paralleling321 Tight parameter distributio

 ..2. Size:1573K  st
stgw40h65fb.pdf pdf_icon

STGW40H65FB

STGW40H65FB, STGFW40H65FB, STGWT40H65FBTrench gate field-stop IGBT, HB series 650 V, 40 A high speedDatasheet - production dataFeatures Maximum junction temperature: TJ = 175 C111 High speed switching series3 Minimized tail current21 Very low saturation voltage: VCE(sat) = 1.6 V TABTO-3PF(typ.) @ IC = 40 A Tight parameters distribution

 5.1. Size:498K  st
stgw40h65dfb.pdf pdf_icon

STGW40H65FB

STGW40H65DFBDatasheetTrench gate field-stop 650 V, 40 A high speed HB series IGBTFeatures Maximum junction temperature: TJ = 175 C High speed switching series Minimized tail current Low saturation voltage: VCE(sat) = 1.6 V (typ.) @ IC = 40 A32 Tight parameter distribution1 Safe parallelingTO-247 Positive VCE(sat) temperature coefficient Lo

 6.1. Size:1485K  st
stgw40h60dlfb.pdf pdf_icon

STGW40H65FB

STGW40H60DLFB, STGWT40H60DLFBTrench gate field-stop IGBT, HB series 600 V, 40 A high speedDatasheet - production dataFeatures Maximum junction temperature: TJ = 175 CTAB High speed switching series Minimized tail current Low saturation voltage: VCE(sat) = 1.6 V (typ.) @ IC = 40 A323 Tight parameters distribution12 Safe paralleling1 L

Datasheet: NGTB15N120IHWG , IHW50N65R5 , IKW50N65WR5 , STGB40V60F , STGP40V60F , STGW15M120DF3 , STGW40H60DLFB , STGW40H65DFB , IHW20N120R3 , STGW40V60DF , STGW40V60DLF , STGW40V60F , STGWA15M120DF3 , STGWT40H60DLFB , STGWT40H65DFB , STGWT40H65FB , STGWT40V60DF .

History: MMG300D170B

Keywords - STGW40H65FB transistor datasheet

 STGW40H65FB cross reference
 STGW40H65FB equivalent finder
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