All IGBT. NGTB15N120FL2 Datasheet

 

NGTB15N120FL2 IGBT. Datasheet pdf. Equivalent


   Type Designator: NGTB15N120FL2
   Type: IGBT + Anti-Parallel Diode
   Marking Code: 15N120FL2
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 147 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic|ⓘ - Maximum Collector Current: 15 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2 V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 6.5 V
   Tjⓘ - Maximum Junction Temperature: 175 ℃
   trⓘ - Rise Time, typ: 104 nS
   Coesⓘ - Output Capacitance, typ: 88 pF
   Qgⓘ - Total Gate Charge, typ: 109 nC
   Package: TO247

 NGTB15N120FL2 Transistor Equivalent Substitute - IGBT Cross-Reference Search

 

NGTB15N120FL2 Datasheet (PDF)

 ..1. Size:233K  onsemi
ngtb15n120fl2.pdf

NGTB15N120FL2
NGTB15N120FL2

NGTB15N120FL2WGIGBT - Field Stop IIThis Insulated Gate Bipolar Transistor (IGBT) features a robust andcost effective Field Stop II Trench construction, and provides superiorperformance in demanding switching applications, offering both lowon state voltage and minimal switching loss. The IGBT is well suitedfor UPS and solar applications. Incorporated into the device is a softand fa

 0.1. Size:267K  onsemi
ngtb15n120fl2wg.pdf

NGTB15N120FL2
NGTB15N120FL2

NGTB15N120FL2WGIGBT - Field Stop IIThis Insulated Gate Bipolar Transistor (IGBT) features a robust andcost effective Field Stop II Trench construction, and provides superiorperformance in demanding switching applications, offering both lowon state voltage and minimal switching loss. The IGBT is well suitedfor UPS and solar applications. Incorporated into the device is a softwww.on

 2.1. Size:185K  onsemi
ngtb15n120flwg.pdf

NGTB15N120FL2
NGTB15N120FL2

NGTB15N120FLWGIGBTThis Insulated Gate Bipolar Transistor (IGBT) features a robust andcost effective Trench construction, and provides superior performancein demanding switching applications, offering both low on statevoltage and minimal switching loss. The IGBT is well suited for UPSand solar applications. Incorporated into the device is a soft and fastco-packaged free wheeling di

 2.2. Size:185K  onsemi
ngtb15n120fl.pdf

NGTB15N120FL2
NGTB15N120FL2

NGTB15N120FLWGIGBTThis Insulated Gate Bipolar Transistor (IGBT) features a robust andcost effective Trench construction, and provides superior performancein demanding switching applications, offering both low on statevoltage and minimal switching loss. The IGBT is well suited for UPSand solar applications. Incorporated into the device is a soft and fastco-packaged free wheeling di

Datasheet: APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W , IRG4MC50U , CRG60T60AK3HD , AOB10B60D , AOK10B60D , AOT10B60D , NGB8207AB , NGB8207B , AOB15B60D , IRGSL8B60K , AOK15B60D .

 

 
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