All IGBT. NGTB15N120FL2 Datasheet

 

NGTB15N120FL2 IGBT. Datasheet pdf. Equivalent

Type Designator: NGTB15N120FL2

Marking Code: 15N120FL2

Type of IGBT Channel: N-Channel

Maximum Power Dissipation (Pc), W: 147

Maximum Collector-Emitter Voltage |Vce|, V: 1200

Collector-Emitter saturation Voltage |Vcesat|, V: 2

Maximum Gate-Emitter Voltage |Veg|, V: 20

Maximum Collector Current |Ic|, A: 15

Maximum Junction Temperature (Tj), °C: 175

Rise Time, nS: 104

Maximum Collector Capacity (Cc), pF: 88

Package: TO247

NGTB15N120FL2 Transistor Equivalent Substitute - IGBT Cross-Reference Search

NGTB15N120FL2 PDF doc:

1.1. ngtb15n120fl2.pdf Size:233K _igbt

NGTB15N120FL2
NGTB15N120FL2

NGTB15N120FL2WG IGBT - Field Stop II This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop II Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss. The IGBT is well suited for UPS and solar applications. Incorporated into the device is a soft and fa

1.2. ngtb15n120lwg.pdf Size:175K _igbt

NGTB15N120FL2
NGTB15N120FL2

NGTB15N120LWG IGBT This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop (FS) Trench construction, and provides superior performance in demanding switching applications, offering both low on-state voltage and minimal switching loss. The IGBT is well suited for resonant or soft switching applications. Incorporated http://onsemi.com into the device

1.3. ngtb15n120flwg.pdf Size:185K _igbt

NGTB15N120FL2
NGTB15N120FL2

NGTB15N120FLWG IGBT This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss. The IGBT is well suited for UPS and solar applications. Incorporated into the device is a soft and fast co-packaged free wheeling di

1.4. ngtb15n120l.pdf Size:175K _igbt

NGTB15N120FL2
NGTB15N120FL2

NGTB15N120LWG IGBT This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop (FS) Trench construction, and provides superior performance in demanding switching applications, offering both low on-state voltage and minimal switching loss. The IGBT is well suited for resonant or soft switching applications. Incorporated http://onsemi.com into the device

1.5. ngtb15n120ihl.pdf Size:172K _igbt

NGTB15N120FL2
NGTB15N120FL2

NGTB15N120IHLWG IGBT This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop (FS) Trench construction, and provides superior performance in demanding switching applications, offering both low on-state voltage and minimal switching loss. The IGBT is well suited for resonant or soft switching applications. Incorporated http://onsemi.com into the devic

1.6. ngtb15n120fl.pdf Size:185K _igbt

NGTB15N120FL2
NGTB15N120FL2

NGTB15N120FLWG IGBT This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss. The IGBT is well suited for UPS and solar applications. Incorporated into the device is a soft and fast co-packaged free wheeling di

1.7. ngtb15n120fl2wg.pdf Size:233K _igbt

NGTB15N120FL2
NGTB15N120FL2

NGTB15N120FL2WG IGBT - Field Stop II This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop II Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss. The IGBT is well suited for UPS and solar applications. Incorporated into the device is a soft and fa

1.8. ngtb15n120ihr.pdf Size:175K _igbt

NGTB15N120FL2
NGTB15N120FL2

NGTB15N120IHRWG IGBT with Monolithic Free Wheeling Diode This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop (FS) Trench construction, and provides superior performance in demanding switching applications, offering both low on-state voltage and minimal switching loss. The IGBT is http://onsemi.com well suited for resonant or soft switching appli

1.9. ngtb15n120ihwg.pdf Size:124K _igbt

NGTB15N120FL2
NGTB15N120FL2

NGTB15N120IHWG Product Preview IGBT This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop (FS) Trench construction, and provides superior performance in demanding switching applications, offering both low on-state voltage and minimal switching loss. The IGBT is http://onsemi.com well suited for resonant or soft switching applications. 15 A, 1200

1.10. ngtb15n120ih.pdf Size:124K _igbt

NGTB15N120FL2
NGTB15N120FL2

NGTB15N120IHWG Product Preview IGBT This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop (FS) Trench construction, and provides superior performance in demanding switching applications, offering both low on-state voltage and minimal switching loss. The IGBT is http://onsemi.com well suited for resonant or soft switching applications. 15 A, 1200

1.11. ngtb15n120ihrwg.pdf Size:175K _igbt

NGTB15N120FL2
NGTB15N120FL2

NGTB15N120IHRWG IGBT with Monolithic Free Wheeling Diode This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop (FS) Trench construction, and provides superior performance in demanding switching applications, offering both low on-state voltage and minimal switching loss. The IGBT is http://onsemi.com well suited for resonant or soft switching appli

Datasheet: STGWT40V60DF , STGWT40V60DLF , STGW50HF65SD , STGWT50HF65SD , IHW20N120R5 , IHW20N135R5 , MM60G60B , RJH1CV6DPK , IXGP7N60B , NGTB15N120FL2WG , NGTG15N120FL2 , NGTG15N120FL2WG , NGTB60N60S , NGTB60N60SWG , AP50G60SW , IRGP4263 , MMG50A120B7HN .

 


NGTB15N120FL2
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