All IGBT. NGTB15N120FL2 Datasheet

 

NGTB15N120FL2 Datasheet and Replacement


   Type Designator: NGTB15N120FL2
   Type: IGBT
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 147 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic|ⓘ - Maximum Collector Current: 15 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2 V @25℃
   Tjⓘ - Maximum Junction Temperature: 175 ℃
   trⓘ - Rise Time, typ: 104 nS
   Coesⓘ - Output Capacitance, typ: 88 pF
   Package: TO247
      - IGBT Cross-Reference

 

NGTB15N120FL2 Datasheet (PDF)

 ..1. Size:233K  onsemi
 ngtb15n120fl2.pdf pdf_icon

NGTB15N120FL2

NGTB15N120FL2WGIGBT - Field Stop IIThis Insulated Gate Bipolar Transistor (IGBT) features a robust andcost effective Field Stop II Trench construction, and provides superiorperformance in demanding switching applications, offering both lowon state voltage and minimal switching loss. The IGBT is well suitedfor UPS and solar applications. Incorporated into the device is a softand fa

 0.1. Size:267K  onsemi
 ngtb15n120fl2wg.pdf pdf_icon

NGTB15N120FL2

NGTB15N120FL2WGIGBT - Field Stop IIThis Insulated Gate Bipolar Transistor (IGBT) features a robust andcost effective Field Stop II Trench construction, and provides superiorperformance in demanding switching applications, offering both lowon state voltage and minimal switching loss. The IGBT is well suitedfor UPS and solar applications. Incorporated into the device is a softwww.on

 2.1. Size:185K  onsemi
 ngtb15n120flwg.pdf pdf_icon

NGTB15N120FL2

NGTB15N120FLWGIGBTThis Insulated Gate Bipolar Transistor (IGBT) features a robust andcost effective Trench construction, and provides superior performancein demanding switching applications, offering both low on statevoltage and minimal switching loss. The IGBT is well suited for UPSand solar applications. Incorporated into the device is a soft and fastco-packaged free wheeling di

 2.2. Size:185K  onsemi
 ngtb15n120fl.pdf pdf_icon

NGTB15N120FL2

NGTB15N120FLWGIGBTThis Insulated Gate Bipolar Transistor (IGBT) features a robust andcost effective Trench construction, and provides superior performancein demanding switching applications, offering both low on statevoltage and minimal switching loss. The IGBT is well suited for UPSand solar applications. Incorporated into the device is a soft and fastco-packaged free wheeling di

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Datasheet: STGWT40V60DF , STGWT40V60DLF , STGW50HF65SD , STGWT50HF65SD , IHW20N120R5 , IHW20N135R5 , MM60G60B , RJH1CV6DPK , SGH80N60UFD , NGTB15N120FL2WG , NGTG15N120FL2 , NGTG15N120FL2WG , NGTB60N60S , NGTB60N60SWG , AP50G60SW , IRGP4263 , MMG50A120B7HN .

History: STGW60H65F | PPNHZ52F120A

Keywords - NGTB15N120FL2 transistor datasheet

 NGTB15N120FL2 cross reference
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 NGTB15N120FL2 replacement

 

 
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