Справочник IGBT. NGTB15N120FL2

 

NGTB15N120FL2 - IGBT справочник. Даташиты. Аналоги. Параметры и характеристики.


   Наименование: NGTB15N120FL2
   Тип транзистора: IGBT + Diode
   Маркировка: 15N120FL2
   Тип управляющего канала: N
   Pcⓘ - Максимальная рассеиваемая мощность: 147 W
   |Vce|ⓘ - Предельно-допустимое напряжение коллектор-эмиттер: 1200 V
   |Vge|ⓘ - Максимально допустимое напряжение эмиттер-затвор: 20 V
   |Ic|ⓘ - Максимальный постоянный ток коллектора: 15 A @25℃
   |VCEsat|ⓘ - Напряжение насыщения коллектор-эмиттер типовое: 2 V @25℃
   |VGEth|ⓘ - Максимальное пороговое напряжение затвор-эмиттер: 6.5 V
   Tjⓘ - Максимальная температура перехода: 175 ℃
   trⓘ - Время нарастания типовое: 104 nS
   Coesⓘ - Выходная емкость, типовая: 88 pF
   Qgⓘ - Общий заряд затвора, typ: 109 nC
   Тип корпуса: TO247

 Аналог (замена) для NGTB15N120FL2

 

 

NGTB15N120FL2 Datasheet (PDF)

 ..1. Size:233K  onsemi
 ngtb15n120fl2.pdf

NGTB15N120FL2 NGTB15N120FL2

NGTB15N120FL2WGIGBT - Field Stop IIThis Insulated Gate Bipolar Transistor (IGBT) features a robust andcost effective Field Stop II Trench construction, and provides superiorperformance in demanding switching applications, offering both lowon state voltage and minimal switching loss. The IGBT is well suitedfor UPS and solar applications. Incorporated into the device is a softand fa

 0.1. Size:267K  onsemi
 ngtb15n120fl2wg.pdf

NGTB15N120FL2 NGTB15N120FL2

NGTB15N120FL2WGIGBT - Field Stop IIThis Insulated Gate Bipolar Transistor (IGBT) features a robust andcost effective Field Stop II Trench construction, and provides superiorperformance in demanding switching applications, offering both lowon state voltage and minimal switching loss. The IGBT is well suitedfor UPS and solar applications. Incorporated into the device is a softwww.on

 2.1. Size:185K  onsemi
 ngtb15n120flwg.pdf

NGTB15N120FL2 NGTB15N120FL2

NGTB15N120FLWGIGBTThis Insulated Gate Bipolar Transistor (IGBT) features a robust andcost effective Trench construction, and provides superior performancein demanding switching applications, offering both low on statevoltage and minimal switching loss. The IGBT is well suited for UPSand solar applications. Incorporated into the device is a soft and fastco-packaged free wheeling di

 2.2. Size:185K  onsemi
 ngtb15n120fl.pdf

NGTB15N120FL2 NGTB15N120FL2

NGTB15N120FLWGIGBTThis Insulated Gate Bipolar Transistor (IGBT) features a robust andcost effective Trench construction, and provides superior performancein demanding switching applications, offering both low on statevoltage and minimal switching loss. The IGBT is well suited for UPSand solar applications. Incorporated into the device is a soft and fastco-packaged free wheeling di

Другие IGBT... APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W , IRG4MC50U , CRG60T60AK3HD , AOB10B60D , AOK10B60D , AOT10B60D , NGB8207AB , NGB8207B , AOB15B60D , IRGSL8B60K , AOK15B60D .

 

 
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