IGW50N65F5 Specs and Replacement
Type Designator: IGW50N65F5
Type: IGBT
Type of IGBT Channel: N
Absolute Maximum Ratings
Pc ⓘ - Maximum Power Dissipation: 305 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 650 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic| ⓘ - Maximum Collector Current: 80 A @25℃
Tj ⓘ - Maximum Junction Temperature: 175 ℃
Electrical Characteristics
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.6 V @25℃
tr ⓘ - Rise Time, typ: 15 nS
Coesⓘ - Output Capacitance, typ: 50 pF
Package: TO247
IGW50N65F5 Substitution - IGBT ⓘ Cross-Reference Search
IGW50N65F5 datasheet
igw50n65f5.pdf
IGBT High speed 5 FAST IGBT in TRENCHSTOPTM 5 technology IGW50N65F5 650V IGBT high speed switching series fifth generation Data sheet Industrial Power Control IGW50N65F5 High speed switching series fifth generation High speed 5 FAST IGBT in TRENCHSTOPTM 5 technology Features and Benefits C High speed F5 technology offering Best-in-Class efficiency in hard switching and resonant... See More ⇒
aigw50n65f5.pdf
AIGW50N65F5 High speed switching series fifth generation High speed fast IGBT in TRENCHSTOPTM 5 technology Features and Benefits C High speed F5 technology offering Best-in-Class efficiency in hard switching and resonant topologies 650V breakdown voltage Low gate charge Q G G Maximum junction temperature 175 C E Dynamically stress tested Qualified accord... See More ⇒
igw50n65f5a.pdf
IGBT High speed 5 FAST IGBT in TRENCHSTOPTM 5 technology IGW50N65F5A 650V IGBT High speed switching series fifth generation Data sheet Industrial Power Control IGW50N65F5A High speed switching series fifth generation High speed 5 FAST IGBT in TRENCHSTOPTM 5 technology Features and Benefits C High speed F5 technology offering Best-in-Class efficiency in hard switching and reson... See More ⇒
aigw50n65h5.pdf
AIGW50N65H5 High speed switching series fifth generation High speed fast IGBT in TRENCHSTOPTM 5 technology Features and Benefits C High speed H5 technology offering Best-in-Class efficiency in hard switching and resonant topologies Plug and play replacement of previous generation IGBTs 650V breakdown voltage G Low gate charge Q E G Maximum junction temperature... See More ⇒
Specs: NGTB45N60S1 , NGTB45N60S1WG , NGTB45N60S2 , NGTB45N60S2WG , NGTG35N65FL2 , NGTG35N65FL2WG , RJH60D7BDPQ-E0 , RJH60D7DPQ-E0 , FGH30S130P , IGW50N65H5 , IKW50N65F5 , IKW50N65H5 , IRG8P40N120KD , IRGP6650D , MMG40A120B6C , IRG7PH42UD1M , IRG7PG42UD .
History: STGD3HF60HDT4 | STGP30H60DF | STGF15M65DF2 | IKW50N65H5 | SKW10N60A | STGP35HF60W | MMIX1Y82N120C3H1
Keywords - IGW50N65F5 transistor spec
IGW50N65F5 cross reference
IGW50N65F5 equivalent finder
IGW50N65F5 lookup
IGW50N65F5 substitution
IGW50N65F5 replacement
History: STGD3HF60HDT4 | STGP30H60DF | STGF15M65DF2 | IKW50N65H5 | SKW10N60A | STGP35HF60W | MMIX1Y82N120C3H1
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