All IGBT. IGW50N65F5 Datasheet

 

IGW50N65F5 Datasheet and Replacement


   Type Designator: IGW50N65F5
   Type: IGBT
   Type of IGBT Channel: N
   Pc ⓘ - Maximum Power Dissipation: 305 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 650 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic| ⓘ - Maximum Collector Current: 80 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.6 V @25℃
   Tj ⓘ - Maximum Junction Temperature: 175 ℃
   tr ⓘ - Rise Time, typ: 15 nS
   Coesⓘ - Output Capacitance, typ: 50 pF
   Package: TO247
 

 IGW50N65F5 substitution

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IGW50N65F5 Datasheet (PDF)

 ..1. Size:1997K  infineon
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IGW50N65F5

IGBTHigh speed 5 FAST IGBT in TRENCHSTOPTM 5 technologyIGW50N65F5650V IGBT high speed switching series fifth generationData sheetIndustrial Power ControlIGW50N65F5High speed switching series fifth generationHigh speed 5 FAST IGBT in TRENCHSTOPTM 5 technologyFeatures and Benefits: CHigh speed F5 technology offering Best-in-Class efficiency in hard switching and resonant

 0.1. Size:1788K  infineon
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IGW50N65F5

AIGW50N65F5High speed switching series fifth generationHigh speed fast IGBT in TRENCHSTOPTM 5 technologyFeatures and Benefits: C High speed F5 technology offering: Best-in-Class efficiency in hard switching and resonant topologies 650V breakdown voltage Low gate charge Q GG Maximum junction temperature 175C E Dynamically stress tested Qualified accord

 0.2. Size:1939K  infineon
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IGW50N65F5

IGBTHigh speed 5 FAST IGBT in TRENCHSTOPTM 5 technologyIGW50N65F5A650V IGBTHigh speed switching series fifth generationData sheetIndustrial Power ControlIGW50N65F5AHigh speed switching series fifth generationHigh speed 5 FAST IGBT in TRENCHSTOPTM 5 technologyFeatures and Benefits: CHigh speed F5 technology offering Best-in-Class efficiency in hard switching and reson

 6.1. Size:1782K  infineon
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IGW50N65F5

AIGW50N65H5High speed switching series fifth generationHigh speed fast IGBT in TRENCHSTOPTM 5 technologyFeatures and Benefits: C High speed H5 technology offering: Best-in-Class efficiency in hard switching and resonant topologies Plug and play replacement of previous generation IGBTs 650V breakdown voltage G Low gate charge Q EG Maximum junction temperature

Datasheet: NGTB45N60S1 , NGTB45N60S1WG , NGTB45N60S2 , NGTB45N60S2WG , NGTG35N65FL2 , NGTG35N65FL2WG , RJH60D7BDPQ-E0 , RJH60D7DPQ-E0 , IRG4PC50U , IGW50N65H5 , IKW50N65F5 , IKW50N65H5 , IRG8P40N120KD , IRGP6650D , MMG40A120B6C , IRG7PH42UD1M , IRG7PG42UD .

History: MMG25HD120XT6TC | MWI300-17E9 | MMG50SR120DE

Keywords - IGW50N65F5 transistor datasheet

 IGW50N65F5 cross reference
 IGW50N65F5 equivalent finder
 IGW50N65F5 lookup
 IGW50N65F5 substitution
 IGW50N65F5 replacement

 

 
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