Справочник IGBT. IGW50N65F5

 

IGW50N65F5 - IGBT справочник. Даташиты. Аналоги. Параметры и характеристики.


   Наименование: IGW50N65F5
   Тип транзистора: IGBT + Diode
   Маркировка: G50F655
   Тип управляющего канала: N
   Максимальная рассеиваемая мощность (Pc), W: 305
   Предельно-допустимое напряжение коллектор-эмиттер |Vce|, V: 650
   Максимально допустимое напряжение эмиттер-затвор |Vge|, V: 20
   Максимальный постоянный ток коллектора |Ic| @25℃, A: 80
   Напряжение насыщения коллектор-эмиттер типовое |VCE(sat)|, V: 1.6
   Максимальная температура перехода (Tj), ℃: 175
   Время нарастания типовое (tr), nS: 15
   Емкость коллектора типовая (Cc), pf: 50
   Тип корпуса: TO247

 Аналог (замена) для IGW50N65F5

 

 

IGW50N65F5 Datasheet (PDF)

 ..1. Size:1997K  infineon
 igw50n65f5.pdf

IGW50N65F5 IGW50N65F5

IGBTHigh speed 5 FAST IGBT in TRENCHSTOPTM 5 technologyIGW50N65F5650V IGBT high speed switching series fifth generationData sheetIndustrial Power ControlIGW50N65F5High speed switching series fifth generationHigh speed 5 FAST IGBT in TRENCHSTOPTM 5 technologyFeatures and Benefits: CHigh speed F5 technology offering Best-in-Class efficiency in hard switching and resonant

 0.1. Size:1788K  infineon
 aigw50n65f5.pdf

IGW50N65F5 IGW50N65F5

AIGW50N65F5High speed switching series fifth generationHigh speed fast IGBT in TRENCHSTOPTM 5 technologyFeatures and Benefits: C High speed F5 technology offering: Best-in-Class efficiency in hard switching and resonant topologies 650V breakdown voltage Low gate charge Q GG Maximum junction temperature 175C E Dynamically stress tested Qualified accord

 0.2. Size:1939K  infineon
 igw50n65f5a.pdf

IGW50N65F5 IGW50N65F5

IGBTHigh speed 5 FAST IGBT in TRENCHSTOPTM 5 technologyIGW50N65F5A650V IGBTHigh speed switching series fifth generationData sheetIndustrial Power ControlIGW50N65F5AHigh speed switching series fifth generationHigh speed 5 FAST IGBT in TRENCHSTOPTM 5 technologyFeatures and Benefits: CHigh speed F5 technology offering Best-in-Class efficiency in hard switching and reson

 6.1. Size:1782K  infineon
 aigw50n65h5.pdf

IGW50N65F5 IGW50N65F5

AIGW50N65H5High speed switching series fifth generationHigh speed fast IGBT in TRENCHSTOPTM 5 technologyFeatures and Benefits: C High speed H5 technology offering: Best-in-Class efficiency in hard switching and resonant topologies Plug and play replacement of previous generation IGBTs 650V breakdown voltage G Low gate charge Q EG Maximum junction temperature

 6.2. Size:1996K  infineon
 igw50n65h5.pdf

IGW50N65F5 IGW50N65F5

IGBTHigh speed 5 IGBT in TRENCHSTOPTM 5 technologyIGW50N65H5650V IGBT high speed switching series fifth generationData sheetIndustrial Power ControlIGW50N65H5High speed switching series fifth generationHigh speed 5 IGBT in TRENCHSTOPTM 5 technologyFeatures and Benefits: CHigh speed H5 technology offering Best-in-Class efficiency in hard switching and resonanttopologi

 6.3. Size:1935K  infineon
 igw50n65h5a.pdf

IGW50N65F5 IGW50N65F5

IGBTHigh speed 5 FAST IGBT in TRENCHSTOPTM 5 technologyIGW50N65H5A650V IGBTHigh speed switching series fifth generationData sheetIndustrial Power ControlIGW50N65H5AHigh speed switching series fifth generationHigh speed 5 FAST IGBT in TRENCHSTOPTM 5 technologyFeatures and Benefits: CHigh speed H5 technology offering Best-in-Class efficiency in hard switching and reson

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