IGW50N65F5 - аналоги, основные параметры, даташиты
Наименование: IGW50N65F5
Тип транзистора: IGBT
Тип управляющего канала: N
Предельные значения
Pc ⓘ - Максимальная рассеиваемая мощность: 305 W
|Vce|ⓘ - Предельно-допустимое напряжение коллектор-эмиттер: 650 V
|Vge|ⓘ - Максимально допустимое напряжение эмиттер-затвор: 20 V
|Ic| ⓘ - Максимальный постоянный ток коллектора: 80 A @25℃
Tj ⓘ - Максимальная температура перехода: 175 ℃
Электрические характеристики
|VCEsat|ⓘ - Напряжение насыщения коллектор-эмиттер типовое: 1.6 V @25℃
tr ⓘ - Время нарастания типовое: 15 nS
Coesⓘ - Выходная емкость, типовая: 50 pF
Тип корпуса: TO247
Аналог (замена) для IGW50N65F5
- подбор ⓘ IGBT транзистора по параметрам
IGW50N65F5 даташит
igw50n65f5.pdf
IGBT High speed 5 FAST IGBT in TRENCHSTOPTM 5 technology IGW50N65F5 650V IGBT high speed switching series fifth generation Data sheet Industrial Power Control IGW50N65F5 High speed switching series fifth generation High speed 5 FAST IGBT in TRENCHSTOPTM 5 technology Features and Benefits C High speed F5 technology offering Best-in-Class efficiency in hard switching and resonant
aigw50n65f5.pdf
AIGW50N65F5 High speed switching series fifth generation High speed fast IGBT in TRENCHSTOPTM 5 technology Features and Benefits C High speed F5 technology offering Best-in-Class efficiency in hard switching and resonant topologies 650V breakdown voltage Low gate charge Q G G Maximum junction temperature 175 C E Dynamically stress tested Qualified accord
igw50n65f5a.pdf
IGBT High speed 5 FAST IGBT in TRENCHSTOPTM 5 technology IGW50N65F5A 650V IGBT High speed switching series fifth generation Data sheet Industrial Power Control IGW50N65F5A High speed switching series fifth generation High speed 5 FAST IGBT in TRENCHSTOPTM 5 technology Features and Benefits C High speed F5 technology offering Best-in-Class efficiency in hard switching and reson
aigw50n65h5.pdf
AIGW50N65H5 High speed switching series fifth generation High speed fast IGBT in TRENCHSTOPTM 5 technology Features and Benefits C High speed H5 technology offering Best-in-Class efficiency in hard switching and resonant topologies Plug and play replacement of previous generation IGBTs 650V breakdown voltage G Low gate charge Q E G Maximum junction temperature
Другие IGBT... NGTB45N60S1 , NGTB45N60S1WG , NGTB45N60S2 , NGTB45N60S2WG , NGTG35N65FL2 , NGTG35N65FL2WG , RJH60D7BDPQ-E0 , RJH60D7DPQ-E0 , FGH30S130P , IGW50N65H5 , IKW50N65F5 , IKW50N65H5 , IRG8P40N120KD , IRGP6650D , MMG40A120B6C , IRG7PH42UD1M , IRG7PG42UD .
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Список транзисторов
Обновления
IGBT: JJT40N120SE | JJT40N120HE | JJT30N65UE | JJT30N65SY | JJT30N65SS | JJT30N65SE | JJT40N65UH | JJT40N65UE | JJT40N65LE | JJT40N65HE | JJT40N135UE
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