IRGP6650D Datasheet. Specs and Replacement

Type Designator: IRGP6650D  📄📄 

Type: IGBT

Type of IGBT Channel: N

Absolute Maximum Ratings

Pc ⓘ - Maximum Power Dissipation: 306 W

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V

|Ic| ⓘ - Maximum Collector Current: 80 A @25℃

Tj ⓘ - Maximum Junction Temperature: 175 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.65 V @25℃

tr ⓘ - Rise Time, typ: 30 nS

Coesⓘ - Output Capacitance, typ: 130 pF

Package: TO247

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IRGP6650D datasheet

 ..1. Size:688K  international rectifier
 irgp6650d.pdf pdf_icon

IRGP6650D

IRGP6650DPbF IRGP6650D-EPbF Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode VCES = 600V C C C IC = 50A, TC =100 C E tSC 5 s, TJ(max) = 175 C G E C G C G E VCE(ON) typ. = 1.65V @ IC = 35A IRGP6650DPbF IRGP6650D EPbF n-channel TO 247AC TO 247AD Applications G C E Welding Gate Collector Emitter H Bridg... See More ⇒

 7.1. Size:976K  international rectifier
 auirgp66524d0.pdf pdf_icon

IRGP6650D

AUIRGP66524D0 AUIRGF66524D0 AUTOMOTIVE GRADE INSULATED GATE BIPOLAR TRANSISTOR WITH COOLiRIGBT ULTRAFAST SOFT RECOVERY DIODE C VCES = 600V INOMINAL = 24A E Tsc 6 s, TJ(MAX) = 175 C G C E G C G E VCE(ON) typ. = 1.60V TO-247AC TO-247AD n-channel AUIRGP66524D0 AUIRGF66524D0 Applications G C E Air Conditioning Compressor Gate Collector E... See More ⇒

 8.1. Size:637K  international rectifier
 irgp6690dpbf irgp6690d-epbf.pdf pdf_icon

IRGP6650D

IRGP6690DPbF IRGP6690D-EPbF Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode VCES = 600V C C C IC = 90A, TC =100 C tSC 5 s, TJ(max) = 175 C G E E C G C G E VCE(ON) typ. = 1.65V @ IC = 75A IRGP6690DPbF IRGP6690D-EPbF n-channel TO-247AC TO-247AD Applications G C E Welding Gate Collector Emitter H Bridge Converters Fea... See More ⇒

 8.2. Size:682K  international rectifier
 irgp6660d.pdf pdf_icon

IRGP6650D

IRGP6660DPbF IRGP6660D-EPbF Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode VCES = 600V C C C IC = 60A, TC =100 C tSC 5 s, TJ(max) = 175 C G E E C G C G E VCE(ON) typ. = 1.7V @ IC = 48A IRGP6660DPbF IRGP6660D-EPbF n-channel TO-247AC TO-247AD Applications G C E Welding Gate Collector Emitter H Bridge Converters Feat... See More ⇒

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Specs: NGTG35N65FL2WG, RJH60D7BDPQ-E0, RJH60D7DPQ-E0, IGW50N65F5, IGW50N65H5, IKW50N65F5, IKW50N65H5, IRG8P40N120KD, MGD623S, MMG40A120B6C, IRG7PH42UD1M, IRG7PG42UD, IRG7PH44K10D, MMG50S170B6EN, NGTB40N120FL, NGTB40N120FLWG, RJH1CV7DPK

Keywords - IRGP6650D transistor spec

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