All IGBT. IRG7PH42UD1M Datasheet

 

IRG7PH42UD1M IGBT. Datasheet pdf. Equivalent

Type Designator: IRG7PH42UD1M

Type of IGBT Channel: N-Channel

Maximum Power Dissipation (Pc), W: 313

Maximum Collector-Emitter Voltage |Vce|, V: 1200

Collector-Emitter saturation Voltage |Vcesat|, V: 1.7

Maximum Gate-Emitter Voltage |Veg|, V: 30

Maximum Collector Current |Ic|, A: 85

Maximum Junction Temperature (Tj), °C: 150

Maximum Collector Capacity (Cc), pF: 130

Package: TO247AD

IRG7PH42UD1M Transistor Equivalent Substitute - IGBT Cross-Reference Search

 

IRG7PH42UD1M Datasheet (PDF)

1.1. irg7ph42ud.pdf Size:435K _igbt_a

IRG7PH42UD1M
IRG7PH42UD1M

PD - 97391B IRG7PH42UDPbF INSULATED GATE BIPOLAR TRANSISTOR WITH IRG7PH42UD-EP ULTRAFAST SOFT RECOVERY DIODE Features C • Low VCE (ON) trench IGBT technology VCES = 1200V • Low switching losses • Square RBSOA IC = 45A, TC = 100°C • 100% of the parts tested for ILM • Positive VCE (ON) temperature co-efficient G TJ(max) = 150°C • Ultra fast soft recovery co-pak diod

1.2. irg7ph42ud1.pdf Size:331K _igbt_a

IRG7PH42UD1M
IRG7PH42UD1M

IRG7PH42UD1PbF IRG7PH42UD1-EP INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRA-LOW VF DIODE FOR INDUCTION HEATING AND SOFT SWITCHING APPLICATIONS Features C VCES = 1200V • Low VCE (ON) trench IGBT technology • Low switching losses • Square RBSOA I NOMINAL = 30A • Ultra-low VF Diode G • 1300Vpk repetitive transient capacity TJ(max) = 150°C • 100% of the parts tested for IL

1.3. irg7ph42u-ep.pdf Size:299K _igbt_a

IRG7PH42UD1M
IRG7PH42UD1M

PD - 96233B IRG7PH42UPbF INSULATED GATE BIPOLAR TRANSISTOR IRG7PH42U-EP Features C • Low VCE (ON) trench IGBT technology VCES = 1200V • Low switching losses • Maximum junction temperature 175 °C IC = 60A, TC = 100°C • Square RBSOA • 100% of the parts tested for ILM G TJ(max) =175°C • Positive VCE (ON) temperature co-efficient E • Tight parameter distribution VC

1.4. irg7ph42ud-ep.pdf Size:435K _igbt_a

IRG7PH42UD1M
IRG7PH42UD1M

PD - 97391B IRG7PH42UDPbF INSULATED GATE BIPOLAR TRANSISTOR WITH IRG7PH42UD-EP ULTRAFAST SOFT RECOVERY DIODE Features C • Low VCE (ON) trench IGBT technology VCES = 1200V • Low switching losses • Square RBSOA IC = 45A, TC = 100°C • 100% of the parts tested for ILM • Positive VCE (ON) temperature co-efficient G TJ(max) = 150°C • Ultra fast soft recovery co-pak diod

1.5. irg7ph42ud1m.pdf Size:283K _igbt_a

IRG7PH42UD1M
IRG7PH42UD1M

IRG7PH42UD1MPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRA-LOW VF DIODE FOR INDUCTION HEATING AND SOFT SWITCHING APPLICATIONS Features C • Low VCE (ON) trench IGBT technology VCES = 1200V • Low switching losses • Square RBSOA IC = 45A, TC = 100°C • Ultra-low VF Diode TJ(max) = 150°C • 1300Vpk repetitive transient capacity G • 100% of the parts tested for ILM VCE

1.6. irg7ph42u.pdf Size:299K _igbt_a

IRG7PH42UD1M
IRG7PH42UD1M

PD - 96233B IRG7PH42UPbF INSULATED GATE BIPOLAR TRANSISTOR IRG7PH42U-EP Features C • Low VCE (ON) trench IGBT technology VCES = 1200V • Low switching losses • Maximum junction temperature 175 °C IC = 60A, TC = 100°C • Square RBSOA • 100% of the parts tested for ILM G TJ(max) =175°C • Positive VCE (ON) temperature co-efficient E • Tight parameter distribution VC

Datasheet: RJH60D7DPQ-E0 , IGW50N65F5 , IGW50N65H5 , IKW50N65F5 , IKW50N65H5 , IRG8P40N120KD , IRGP6650D , MMG40A120B6C , IRG4BC40U , IRG7PG42UD , IRG7PH44K10D , MMG50S170B6EN , NGTB40N120FL , NGTB40N120FLWG , RJH1CV7DPK , IRGP4760 , IRGP4760D .

 


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IGBT: IRGC16B60KB | IRGC16B120KB | IRGC15B120UB | IRGC15B120KB | IRGC100B60UB | IRGC100B60KB | IRGC100B120UB | IRGC100B120KB | IGC70T120T6RL | SIGC05T60SNC |