IRG7PH42UD1M - аналоги и описание IGBT

IRG7PH42UD1MPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRA-LOW VF DIODE FOR INDUCTION HEATING AND SOFT SWITCHING APPLICATIONS Features C Low VCE (ON) trench IGBT technology VCES = 1200V Low switching losses Square RBSOA IC = 45A, TC = 100 C Ultra-low VF Diode TJ(max) = 150 C 1300Vpk repetitive transient capacity G 100% of the parts tested for ILM VCE

IRG7PH42UD1PbF IRG7PH42UD1-EP INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRA-LOW VF DIODE FOR INDUCTION HEATING AND SOFT SWITCHING APPLICATIONS Features C VCES = 1200V Low VCE (ON) trench IGBT technology Low switching losses Square RBSOA I NOMINAL = 30A Ultra-low VF Diode G 1300Vpk repetitive transient capacity TJ(max) = 150 C 100% of the parts tested for IL

PD - 97391B IRG7PH42UDPbF INSULATED GATE BIPOLAR TRANSISTOR WITH IRG7PH42UD-EP ULTRAFAST SOFT RECOVERY DIODE Features C Low VCE (ON) trench IGBT technology VCES = 1200V Low switching losses Square RBSOA IC = 45A, TC = 100 C 100% of the parts tested for ILM Positive VCE (ON) temperature co-efficient G TJ(max) = 150 C Ultra fast soft recovery co-pak diod

PD - 97391B IRG7PH42UDPbF INSULATED GATE BIPOLAR TRANSISTOR WITH IRG7PH42UD-EP ULTRAFAST SOFT RECOVERY DIODE Features C Low VCE (ON) trench IGBT technology VCES = 1200V Low switching losses Square RBSOA IC = 45A, TC = 100 C 100% of the parts tested for ILM Positive VCE (ON) temperature co-efficient G TJ(max) = 150 C Ultra fast soft recovery co-pak diod