All IGBT. NGTB40N120IHL Datasheet

 

NGTB40N120IHL Datasheet and Replacement


   Type Designator: NGTB40N120IHL
   Type: IGBT
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 104 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic|ⓘ - Maximum Collector Current: 40 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.9 V @25℃
   Tjⓘ - Maximum Junction Temperature: 150 ℃
   Coesⓘ - Output Capacitance, typ: 245 pF
   Package: TO247
      - IGBT Cross-Reference

 

NGTB40N120IHL Datasheet (PDF)

 ..1. Size:160K  onsemi
ngtb40n120ihl.pdf pdf_icon

NGTB40N120IHL

NGTB40N120IHLWGIGBTThis Insulated Gate Bipolar Transistor (IGBT) features a robust andcost effective Field Stop (FS) Trench construction, and providessuperior performance in demanding switching applications, offeringboth low on-state voltage and minimal switching loss. The IGBT iswell suited for resonant or soft switching applications. Incorporatedhttp://onsemi.cominto the devic

 0.1. Size:160K  onsemi
ngtb40n120ihlwg.pdf pdf_icon

NGTB40N120IHL

NGTB40N120IHLWGIGBTThis Insulated Gate Bipolar Transistor (IGBT) features a robust andcost effective Field Stop (FS) Trench construction, and providessuperior performance in demanding switching applications, offeringboth low on-state voltage and minimal switching loss. The IGBT iswell suited for resonant or soft switching applications. Incorporatedhttp://onsemi.cominto the devic

 2.1. Size:177K  onsemi
ngtb40n120ihrwg.pdf pdf_icon

NGTB40N120IHL

NGTB40N120IHRWGIGBT with Monolithic FreeWheeling DiodeThis Insulated Gate Bipolar Transistor (IGBT) features a robust andcost effective Field Stop (FS) Trench construction, and providessuperior performance in demanding switching applications, offeringboth low on-state voltage and minimal switching loss. The IGBT ishttp://onsemi.comwell suited for resonant or soft switching appli

 2.2. Size:181K  onsemi
ngtb40n120ihr.pdf pdf_icon

NGTB40N120IHL

NGTB40N120IHRWGIGBT with Monolithic FreeWheeling DiodeThis Insulated Gate Bipolar Transistor (IGBT) features a robust andcost effective Field Stop (FS) Trench construction, and providessuperior performance in demanding switching applications, offeringboth low on-state voltage and minimal switching loss. The IGBT ishttp://onsemi.comwell suited for resonant or soft switching appli

Datasheet: NGTB40N120FLWG , RJH1CV7DPK , IRGP4760 , IRGP4760D , STGW25M120DF3 , STGWA25M120DF3 , NGTB30N120IHL , NGTB30N120IHLWG , IHW20N120R2 , NGTB40N120IHLWG , IRGP4063D1 , IRGP4660D , IRGP6660D , MMG50H120X6HN , MMG50S120B6HN , IKW50N60T , NGTB15N120IHR .

History: AOTF5B65M2 | MMG300D120B6UC

Keywords - NGTB40N120IHL transistor datasheet

 NGTB40N120IHL cross reference
 NGTB40N120IHL equivalent finder
 NGTB40N120IHL lookup
 NGTB40N120IHL substitution
 NGTB40N120IHL replacement

 

 
Back to Top

 


 
.