Справочник IGBT. NGTB40N120IHL

 

NGTB40N120IHL - IGBT справочник. Даташиты. Аналоги. Параметры и характеристики.

Наименование: NGTB40N120IHL

Тип транзистора: IGBT

Маркировка: 40N120IHL

Тип управляющего канала: N-Channel

Максимальная рассеиваемая мощность (Pc), W: 104

Предельно-допустимое напряжение коллектор-эмиттер |Vce|, V: 1200

Максимально допустимое напряжение эмиттер-затвор |Vge|, V: 20

Максимальный постоянный ток коллектора |Ic| @25℃, A: 40

Напряжение насыщения коллектор-эмиттер типовое |VCE(sat)|, V: 1.9

Максимальная температура перехода (Tj), ℃: 150

Емкость коллектора типовая (Cc), pf: 245

Тип корпуса: TO247

Аналог (замена) для NGTB40N120IHL

 

 

NGTB40N120IHL Datasheet (PDF)

 ..1. Size:160K  onsemi
 ngtb40n120ihl.pdf

NGTB40N120IHL NGTB40N120IHL

NGTB40N120IHLWGIGBTThis Insulated Gate Bipolar Transistor (IGBT) features a robust andcost effective Field Stop (FS) Trench construction, and providessuperior performance in demanding switching applications, offeringboth low on-state voltage and minimal switching loss. The IGBT iswell suited for resonant or soft switching applications. Incorporatedhttp://onsemi.cominto the devic

 0.1. Size:160K  onsemi
 ngtb40n120ihlwg.pdf

NGTB40N120IHL NGTB40N120IHL

NGTB40N120IHLWGIGBTThis Insulated Gate Bipolar Transistor (IGBT) features a robust andcost effective Field Stop (FS) Trench construction, and providessuperior performance in demanding switching applications, offeringboth low on-state voltage and minimal switching loss. The IGBT iswell suited for resonant or soft switching applications. Incorporatedhttp://onsemi.cominto the devic

 2.1. Size:177K  onsemi
 ngtb40n120ihrwg.pdf

NGTB40N120IHL NGTB40N120IHL

NGTB40N120IHRWGIGBT with Monolithic FreeWheeling DiodeThis Insulated Gate Bipolar Transistor (IGBT) features a robust andcost effective Field Stop (FS) Trench construction, and providessuperior performance in demanding switching applications, offeringboth low on-state voltage and minimal switching loss. The IGBT ishttp://onsemi.comwell suited for resonant or soft switching appli

 2.2. Size:181K  onsemi
 ngtb40n120ihr.pdf

NGTB40N120IHL NGTB40N120IHL

NGTB40N120IHRWGIGBT with Monolithic FreeWheeling DiodeThis Insulated Gate Bipolar Transistor (IGBT) features a robust andcost effective Field Stop (FS) Trench construction, and providessuperior performance in demanding switching applications, offeringboth low on-state voltage and minimal switching loss. The IGBT ishttp://onsemi.comwell suited for resonant or soft switching appli

Другие IGBT... NGTB40N120FLWG , RJH1CV7DPK , IRGP4760 , IRGP4760D , STGW25M120DF3 , STGWA25M120DF3 , NGTB30N120IHL , NGTB30N120IHLWG , IRGS15B60KD , NGTB40N120IHLWG , IRGP4063D1 , IRGP4660D , IRGP6660D , MMG50H120X6HN , MMG50S120B6HN , IKW50N60T , NGTB15N120IHR .

 

 
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