NGTB15N120IHRWG PDF and Equivalents Search

 

NGTB15N120IHRWG Specs and Replacement

Type Designator: NGTB15N120IHRWG

Type: IGBT

Type of IGBT Channel: N

Absolute Maximum Ratings

Pc ⓘ - Maximum Power Dissipation: 166 W

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V

|Ic| ⓘ - Maximum Collector Current: 15 A @25℃

Tj ⓘ - Maximum Junction Temperature: 175 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.1 V @25℃

Coesⓘ - Output Capacitance, typ: 85 pF

Package: TO247

 NGTB15N120IHRWG Substitution

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NGTB15N120IHRWG datasheet

 0.1. Size:175K  onsemi
 ngtb15n120ihrwg.pdf pdf_icon

NGTB15N120IHRWG

NGTB15N120IHRWG IGBT with Monolithic Free Wheeling Diode This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop (FS) Trench construction, and provides superior performance in demanding switching applications, offering both low on-state voltage and minimal switching loss. The IGBT is http //onsemi.com well suited for resonant or soft switching appli... See More ⇒

 1.1. Size:175K  onsemi
 ngtb15n120ihr.pdf pdf_icon

NGTB15N120IHRWG

NGTB15N120IHRWG IGBT with Monolithic Free Wheeling Diode This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop (FS) Trench construction, and provides superior performance in demanding switching applications, offering both low on-state voltage and minimal switching loss. The IGBT is http //onsemi.com well suited for resonant or soft switching appli... See More ⇒

 2.1. Size:124K  onsemi
 ngtb15n120ih.pdf pdf_icon

NGTB15N120IHRWG

NGTB15N120IHWG Product Preview IGBT This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop (FS) Trench construction, and provides superior performance in demanding switching applications, offering both low on-state voltage and minimal switching loss. The IGBT is http //onsemi.com well suited for resonant or soft switching applications. 15 A, 1200 ... See More ⇒

 2.2. Size:172K  onsemi
 ngtb15n120ihl.pdf pdf_icon

NGTB15N120IHRWG

NGTB15N120IHLWG IGBT This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop (FS) Trench construction, and provides superior performance in demanding switching applications, offering both low on-state voltage and minimal switching loss. The IGBT is well suited for resonant or soft switching applications. Incorporated http //onsemi.com into the devic... See More ⇒

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Specs: NGTB40N120IHLWG , IRGP4063D1 , IRGP4660D , IRGP6660D , MMG50H120X6HN , MMG50S120B6HN , IKW50N60T , NGTB15N120IHR , RJP63K2DPP-M0 , NGTB20N120IH , NGTB20N120IHWG , MMG150H160UX6TN , MMG75H120X6TN , MMG75S120B6TN , MMG75W120X6TN , MMG75W120XB6TN , IHW30N120R3 .

Keywords - NGTB15N120IHRWG transistor spec

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