Справочник IGBT. NGTB15N120IHRWG

 

NGTB15N120IHRWG - IGBT справочник. Даташиты. Аналоги. Параметры и характеристики.

Наименование: NGTB15N120IHRWG

Тип транзистора: IGBT

Маркировка: 15N120IHR

Тип управляющего канала: N-Channel

Максимальная рассеиваемая мощность (Pc), W: 166

Предельно-допустимое напряжение коллектор-эмиттер |Vce|, V: 1200

Максимально допустимое напряжение эмиттер-затвор |Vge|, V: 20

Максимальный постоянный ток коллектора |Ic| @25℃, A: 15

Напряжение насыщения коллектор-эмиттер типовое |VCE(sat)|, V: 2.1

Максимальная температура перехода (Tj), ℃: 175

Емкость коллектора типовая (Cc), pf: 85

Тип корпуса: TO247

Аналог (замена) для NGTB15N120IHRWG

 

 

NGTB15N120IHRWG Datasheet (PDF)

 0.1. Size:175K  onsemi
 ngtb15n120ihrwg.pdf

NGTB15N120IHRWG NGTB15N120IHRWG

NGTB15N120IHRWGIGBT with Monolithic FreeWheeling DiodeThis Insulated Gate Bipolar Transistor (IGBT) features a robust andcost effective Field Stop (FS) Trench construction, and providessuperior performance in demanding switching applications, offeringboth low on-state voltage and minimal switching loss. The IGBT ishttp://onsemi.comwell suited for resonant or soft switching appli

 1.1. Size:175K  onsemi
 ngtb15n120ihr.pdf

NGTB15N120IHRWG NGTB15N120IHRWG

NGTB15N120IHRWGIGBT with Monolithic FreeWheeling DiodeThis Insulated Gate Bipolar Transistor (IGBT) features a robust andcost effective Field Stop (FS) Trench construction, and providessuperior performance in demanding switching applications, offeringboth low on-state voltage and minimal switching loss. The IGBT ishttp://onsemi.comwell suited for resonant or soft switching appli

 2.1. Size:172K  onsemi
 ngtb15n120ihl.pdf

NGTB15N120IHRWG NGTB15N120IHRWG

NGTB15N120IHLWGIGBTThis Insulated Gate Bipolar Transistor (IGBT) features a robust andcost effective Field Stop (FS) Trench construction, and providessuperior performance in demanding switching applications, offeringboth low on-state voltage and minimal switching loss. The IGBT iswell suited for resonant or soft switching applications. Incorporatedhttp://onsemi.cominto the devic

 2.2. Size:124K  onsemi
 ngtb15n120ih.pdf

NGTB15N120IHRWG NGTB15N120IHRWG

NGTB15N120IHWGProduct PreviewIGBTThis Insulated Gate Bipolar Transistor (IGBT) features a robust andcost effective Field Stop (FS) Trench construction, and providessuperior performance in demanding switching applications, offeringboth low on-state voltage and minimal switching loss. The IGBT ishttp://onsemi.comwell suited for resonant or soft switching applications.15 A, 1200

 2.3. Size:124K  onsemi
 ngtb15n120ihwg.pdf

NGTB15N120IHRWG NGTB15N120IHRWG

NGTB15N120IHWGProduct PreviewIGBTThis Insulated Gate Bipolar Transistor (IGBT) features a robust andcost effective Field Stop (FS) Trench construction, and providessuperior performance in demanding switching applications, offeringboth low on-state voltage and minimal switching loss. The IGBT ishttp://onsemi.comwell suited for resonant or soft switching applications.15 A, 1200

Другие IGBT... NGTB40N120IHLWG , IRGP4063D1 , IRGP4660D , IRGP6660D , MMG50H120X6HN , MMG50S120B6HN , IKW50N60T , NGTB15N120IHR , GT30J124 , NGTB20N120IH , NGTB20N120IHWG , MMG150H160UX6TN , MMG75H120X6TN , MMG75S120B6TN , MMG75W120X6TN , MMG75W120XB6TN , IHW30N120R3 .

 

 
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