NGTB20N120IHWG Datasheet. Specs and Replacement

Type Designator: NGTB20N120IHWG

Type: IGBT + Anti-Parallel Diode

Marking Code: 20N120IH

Type of IGBT Channel: N

Absolute Maximum Ratings

Pc ⓘ - Maximum Power Dissipation: 170 W

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V

|Ic| ⓘ - Maximum Collector Current: 20 A @25℃

Tj ⓘ - Maximum Junction Temperature: 175 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.2 V @25℃

|VGEth|ⓘ - Maximum G-E Threshold Voltag: 6.5 V

Coesⓘ - Output Capacitance, typ: 90 pF

Qg ⓘ - Total Gate Charge, typ: 150 nC

Package: TO247

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NGTB20N120IHWG datasheet

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 ngtb20n120ihwg.pdf pdf_icon

NGTB20N120IHWG

NGTB20N120IHWG IGBT - Induction Cooking This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop (FS) Trench construction, provides and superior performance in demanding switching applications, and offers low on-state voltage with minimal switching loss. The IGBT is well suited for resonant or soft switching applications. http //onsemi.com Features ... See More ⇒

 2.1. Size:174K  onsemi
 ngtb20n120ihl.pdf pdf_icon

NGTB20N120IHWG

NGTB20N120IHLWG IGBT This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop (FS) Trench construction, and provides superior performance in demanding switching applications, offering both low on-state voltage and minimal switching loss. The IGBT is well suited for resonant or soft switching applications. Incorporated http //onsemi.com into the devic... See More ⇒

 2.2. Size:182K  onsemi
 ngtb20n120ihswg.pdf pdf_icon

NGTB20N120IHWG

NGTB20N120IHSWG IGBT This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop (FS) Trench construction, and provides superior performance in demanding switching applications, offering both low on-state voltage and minimal switching loss. The IGBT is well suited for resonant or soft switching applications. Incorporated http //onsemi.com into the devic... See More ⇒

 2.3. Size:109K  onsemi
 ngtb20n120ih.pdf pdf_icon

NGTB20N120IHWG

NGTB20N120IHWG IGBT - Induction Cooking This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop (FS) Trench construction, provides and superior performance in demanding switching applications, and offers low on-state voltage with minimal switching loss. The IGBT is well suited for resonant or soft switching applications. http //onsemi.com Features ... See More ⇒

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Specs: IRGP4660D, IRGP6660D, MMG50H120X6HN, MMG50S120B6HN, IKW50N60T, NGTB15N120IHR, NGTB15N120IHRWG, NGTB20N120IH, MBQ60T65PES, MMG150H160UX6TN, MMG75H120X6TN, MMG75S120B6TN, MMG75W120X6TN, MMG75W120XB6TN, IHW30N120R3, IHW30N135R3, IRG8P50N120KD

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