NGTB20N120IHWG IGBT. Datasheet pdf. Equivalent

   Type Designator: NGTB20N120IHWG
   Type: IGBT + Anti-Parallel Diode
   Marking Code: 20N120IH
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 170 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic|ⓘ - Maximum Collector Current: 20 V @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.2 V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 6.5 V
   Tjⓘ - Maximum Junction Temperature: 175 ℃
   Collector Capacity (Cc), typ, pF: 90
   Total Gate Charge (Qg), typ, nC: 150
   Package: TO247

NGTB20N120IHWG Transistor Equivalent Substitute - IGBT Cross-Reference Search

NGTB20N120IHWG Datasheet (PDF)

..1. Size:109K onsemi
ngtb20n120ihwg.pdf

NGTB20N120IHWGIGBT - Induction CookingThis Insulated Gate Bipolar Transistor (IGBT) features a robust andcost effective Field Stop (FS) Trench construction, provides andsuperior performance in demanding switching applications, and offerslow on-state voltage with minimal switching loss. The IGBT is wellsuited for resonant or soft switching applications.http://onsemi.comFeatures

2.1. Size:174K onsemi
ngtb20n120ihl.pdf

NGTB20N120IHLWGIGBTThis Insulated Gate Bipolar Transistor (IGBT) features a robust andcost effective Field Stop (FS) Trench construction, and providessuperior performance in demanding switching applications, offeringboth low on-state voltage and minimal switching loss. The IGBT iswell suited for resonant or soft switching applications. Incorporatedhttp://onsemi.cominto the devic

2.2. Size:182K onsemi
ngtb20n120ihswg.pdf

NGTB20N120IHSWGIGBTThis Insulated Gate Bipolar Transistor (IGBT) features a robust andcost effective Field Stop (FS) Trench construction, and providessuperior performance in demanding switching applications, offeringboth low on-state voltage and minimal switching loss. The IGBT iswell suited for resonant or soft switching applications. Incorporatedhttp://onsemi.cominto the devic

2.3. Size:109K onsemi
ngtb20n120ih.pdf

2.4. Size:181K onsemi
ngtb20n120ihr.pdf

NGTB20N120IHRWGIGBT with Monolithic FreeWheeling DiodeThis Insulated Gate Bipolar Transistor (IGBT) features a robust andcost effective Field Stop (FS) Trench construction, provides andsuperior performance in demanding switching applications, and offerslow on-state voltage with minimal switching loss. The IGBT is wellhttp://onsemi.comsuited for resonant or soft switching applica

2.5. Size:181K onsemi
ngtb20n120ihrwg.pdf