NGTB20N120IHWG - IGBT справочник. Даташиты. Аналоги. Параметры и характеристики.
Наименование: NGTB20N120IHWG
Тип транзистора: IGBT
Маркировка: 20N120IH
Тип управляющего канала: N-Channel
Максимальная рассеиваемая мощность (Pc), W: 170
Предельно-допустимое напряжение коллектор-эмиттер |Vce|, V: 1200
Максимально допустимое напряжение эмиттер-затвор |Vge|, V: 20
Максимальный постоянный ток коллектора |Ic| @25℃, A: 20
Напряжение насыщения коллектор-эмиттер типовое |VCE(sat)|, V: 2.2
Максимальная температура перехода (Tj), ℃: 175
Емкость коллектора типовая (Cc), pf: 90
Тип корпуса: TO247
Аналог (замена) для NGTB20N120IHWG
NGTB20N120IHWG Datasheet (PDF)
ngtb20n120ihwg.pdf

NGTB20N120IHWGIGBT - Induction CookingThis Insulated Gate Bipolar Transistor (IGBT) features a robust andcost effective Field Stop (FS) Trench construction, provides andsuperior performance in demanding switching applications, and offerslow on-state voltage with minimal switching loss. The IGBT is wellsuited for resonant or soft switching applications.http://onsemi.comFeatures
ngtb20n120ihrwg.pdf

NGTB20N120IHRWGIGBT with Monolithic FreeWheeling DiodeThis Insulated Gate Bipolar Transistor (IGBT) features a robust andcost effective Field Stop (FS) Trench construction, provides andsuperior performance in demanding switching applications, and offerslow on-state voltage with minimal switching loss. The IGBT is wellhttp://onsemi.comsuited for resonant or soft switching applica
ngtb20n120ihs.pdf

NGTB20N120IHSWGIGBTThis Insulated Gate Bipolar Transistor (IGBT) features a robust andcost effective Field Stop (FS) Trench construction, and providessuperior performance in demanding switching applications, offeringboth low on-state voltage and minimal switching loss. The IGBT iswell suited for resonant or soft switching applications. Incorporatedhttp://onsemi.cominto the devic
ngtb20n120ih.pdf

NGTB20N120IHWGIGBT - Induction CookingThis Insulated Gate Bipolar Transistor (IGBT) features a robust andcost effective Field Stop (FS) Trench construction, provides andsuperior performance in demanding switching applications, and offerslow on-state voltage with minimal switching loss. The IGBT is wellsuited for resonant or soft switching applications.http://onsemi.comFeatures
ngtb20n120ihr.pdf

NGTB20N120IHRWGIGBT with Monolithic FreeWheeling DiodeThis Insulated Gate Bipolar Transistor (IGBT) features a robust andcost effective Field Stop (FS) Trench construction, provides andsuperior performance in demanding switching applications, and offerslow on-state voltage with minimal switching loss. The IGBT is wellhttp://onsemi.comsuited for resonant or soft switching applica
ngtb20n120ihl.pdf

NGTB20N120IHLWGIGBTThis Insulated Gate Bipolar Transistor (IGBT) features a robust andcost effective Field Stop (FS) Trench construction, and providessuperior performance in demanding switching applications, offeringboth low on-state voltage and minimal switching loss. The IGBT iswell suited for resonant or soft switching applications. Incorporatedhttp://onsemi.cominto the devic
ngtb20n120ihswg.pdf

NGTB20N120IHSWGIGBTThis Insulated Gate Bipolar Transistor (IGBT) features a robust andcost effective Field Stop (FS) Trench construction, and providessuperior performance in demanding switching applications, offeringboth low on-state voltage and minimal switching loss. The IGBT iswell suited for resonant or soft switching applications. Incorporatedhttp://onsemi.cominto the devic
Другие IGBT... APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W , IRG4MC50U , TGAN20N135FD , AOB10B60D , AOK10B60D , AOT10B60D , NGB8207AB , NGB8207B , AOB15B60D , IRGSL8B60K , AOK15B60D .



Список транзисторов
Обновления
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