Справочник IGBT. NGTB20N120IHWG

 

NGTB20N120IHWG - IGBT справочник. Даташиты. Аналоги. Параметры и характеристики.

Наименование: NGTB20N120IHWG

Тип транзистора: IGBT

Маркировка: 20N120IH

Тип управляющего канала: N-Channel

Максимальная рассеиваемая мощность (Pc), W: 170

Предельно-допустимое напряжение коллектор-эмиттер |Vce|, V: 1200

Максимально допустимое напряжение эмиттер-затвор |Vge|, V: 20

Максимальный постоянный ток коллектора |Ic| @25℃, A: 20

Напряжение насыщения коллектор-эмиттер типовое |VCE(sat)|, V: 2.2

Максимальная температура перехода (Tj), ℃: 175

Емкость коллектора типовая (Cc), pf: 90

Тип корпуса: TO247

Аналог (замена) для NGTB20N120IHWG

 

 

NGTB20N120IHWG Datasheet (PDF)

 ..1. Size:109K  onsemi
 ngtb20n120ihwg.pdf

NGTB20N120IHWG NGTB20N120IHWG

NGTB20N120IHWGIGBT - Induction CookingThis Insulated Gate Bipolar Transistor (IGBT) features a robust andcost effective Field Stop (FS) Trench construction, provides andsuperior performance in demanding switching applications, and offerslow on-state voltage with minimal switching loss. The IGBT is wellsuited for resonant or soft switching applications.http://onsemi.comFeatures

 2.1. Size:181K  onsemi
 ngtb20n120ihrwg.pdf

NGTB20N120IHWG NGTB20N120IHWG

NGTB20N120IHRWGIGBT with Monolithic FreeWheeling DiodeThis Insulated Gate Bipolar Transistor (IGBT) features a robust andcost effective Field Stop (FS) Trench construction, provides andsuperior performance in demanding switching applications, and offerslow on-state voltage with minimal switching loss. The IGBT is wellhttp://onsemi.comsuited for resonant or soft switching applica

 2.2. Size:182K  onsemi
 ngtb20n120ihs.pdf

NGTB20N120IHWG NGTB20N120IHWG

NGTB20N120IHSWGIGBTThis Insulated Gate Bipolar Transistor (IGBT) features a robust andcost effective Field Stop (FS) Trench construction, and providessuperior performance in demanding switching applications, offeringboth low on-state voltage and minimal switching loss. The IGBT iswell suited for resonant or soft switching applications. Incorporatedhttp://onsemi.cominto the devic

 2.3. Size:109K  onsemi
 ngtb20n120ih.pdf

NGTB20N120IHWG NGTB20N120IHWG

NGTB20N120IHWGIGBT - Induction CookingThis Insulated Gate Bipolar Transistor (IGBT) features a robust andcost effective Field Stop (FS) Trench construction, provides andsuperior performance in demanding switching applications, and offerslow on-state voltage with minimal switching loss. The IGBT is wellsuited for resonant or soft switching applications.http://onsemi.comFeatures

 2.4. Size:181K  onsemi
 ngtb20n120ihr.pdf

NGTB20N120IHWG NGTB20N120IHWG

NGTB20N120IHRWGIGBT with Monolithic FreeWheeling DiodeThis Insulated Gate Bipolar Transistor (IGBT) features a robust andcost effective Field Stop (FS) Trench construction, provides andsuperior performance in demanding switching applications, and offerslow on-state voltage with minimal switching loss. The IGBT is wellhttp://onsemi.comsuited for resonant or soft switching applica

 2.5. Size:174K  onsemi
 ngtb20n120ihl.pdf

NGTB20N120IHWG NGTB20N120IHWG

NGTB20N120IHLWGIGBTThis Insulated Gate Bipolar Transistor (IGBT) features a robust andcost effective Field Stop (FS) Trench construction, and providessuperior performance in demanding switching applications, offeringboth low on-state voltage and minimal switching loss. The IGBT iswell suited for resonant or soft switching applications. Incorporatedhttp://onsemi.cominto the devic

 2.6. Size:182K  onsemi
 ngtb20n120ihswg.pdf

NGTB20N120IHWG NGTB20N120IHWG

NGTB20N120IHSWGIGBTThis Insulated Gate Bipolar Transistor (IGBT) features a robust andcost effective Field Stop (FS) Trench construction, and providessuperior performance in demanding switching applications, offeringboth low on-state voltage and minimal switching loss. The IGBT iswell suited for resonant or soft switching applications. Incorporatedhttp://onsemi.cominto the devic

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